c2539
Abstract: sef831 SEF630
Contextual Info: p ’ v • » • rV iC 't f* S G S-THÖNSON D7E D | 7ciaci23? 0010033 2 J 3C 173 3Q D i N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors.
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sef630sef631sef832sef633+500v/150sef630/sef631300/usc2539sef831
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C1537
Abstract: SEF830
Contextual Info: SG S- TH O n S O N D7E D 73C 17 5 50 7 i 5 c1537 D 0 1 Ô 0 S 3 fl 0 "TT 3 V -// N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.
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c153700v/450vsef830sef831+3sef832sef833sef83i
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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