SEC IRF540 Search Results

IRF540Z

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 29.5mΩ

IRF540ZPBF

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94827 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l IRF540ZPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

IRF540ZS

Abstract: IRF540ZL IRF540Z
Contextual Info: PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D RDS on = 26.5mΩ

Contextual Info: PD - 94758 IRF540Z IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V

Contextual Info: PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 26.5mΩ

Contextual Info: PD - 94827A IRF540ZPbF IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free only the TO-220AB version is

IRF540Z

Abstract: IRF540ZL IRF540ZS
Contextual Info: PD - 94758 IRF540Z IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V

IRF540Z

Abstract: IRF540ZL IRF540ZS MOSFET IRF540zl
Contextual Info: PD - 94758 IRF540Z IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V

IRF540 p-channel MOSFET

Abstract: SEC IRF540 IRF540 IRF540 MOSFET irf540 27 MHz
Contextual Info: Tem ic IRF540 Siliconix N-Channel Enhancement Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (Q ) 0.085 I d (A) 27 TO-22QAB o DRAIN connected to TAB O GD S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

IRF540Z

Abstract: IRF540ZL IRF540ZS
Contextual Info: PD - 95531 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D

IRF540Z

Abstract: IRF540ZL IRF540ZS
Contextual Info: PD - 95531 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D

JB 2256

Abstract: IRF540A irf540a mosfet R/Detector/"detect18+ic"/"CD"/JB 2256
Contextual Info: IRF540A Advanced Power MOSEET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 H A Max. @ V DS= 1 0 0 V

IRF540

Abstract: irf540 27 MHz SEC IRF540 75 LS 541 irf540 "27 MHz" IRF542 irf540 be IRF540 Rg IRF540 SEC NS2N
Contextual Info: IRF540/541/542/543 O ' S ilico n ix JLÆ in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V ) rDS(ON) ( f i) (A) IRF540 100 0.085 27 IRF541 60 0.085 27 IRF542 100 0.11 24 IRF543 60 0.11 24

Contextual Info: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description

IRF540N

Abstract: MOSFET IRF540n IRF1010 irf1010 applications
Contextual Info: PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier

IRF540N

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description

IRF540NPBF

Abstract: IRF1010 94812 4.5v to 100v input regulator
Contextual Info: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International

IRF540NPBF

Abstract: IRF1010 4.5v to 100v input regulator
Contextual Info: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International

IRF540A

Abstract: irf540a mosfet
Contextual Info: IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.052 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V

Contextual Info: IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.052 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V

Contextual Info: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International

3s4 MARKING CODE DIODE

Abstract: IRF540NS
Contextual Info: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =

Contextual Info: IRF540N TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

IRF540N

Abstract: 91341B 16ans 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International