SDT3129 Search Results

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

2N3789

Abstract: 2N3790 2N3791 2N3792 2N5007 2N5009 2N5290 2N5291 2N5312 SDT7909
Contextual Info: 37 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO I M VO LTA G ES D TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO v hFE M IN . I M A X. V GE V CE s V BE(s) V I V *C A I *B A V A 5.0 5.0 5.0 5.0 .50 .50 1.20 1.20 2.0 2.0 .200 .200 90 90 180 2.0

SDT7201

Abstract: 2N5740 SDT3109 2n5290 2N5737 SDT7612
Contextual Info: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500

Contextual Info: Contran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 63 CONTACT METALLIZATION B a se and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)

TO61

Abstract: 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386
Contextual Info: Device Type VCEO hFE V Min/Max @ I C (A) 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 2N5621 2N5623 2N5625 2N5627 2N5677 2N5737 2N5738 2N5739 2N5740 2N5853 2N6127 2N6248 SDT3105 SDT3106 SDT3107 SDT3108 SDT3109 SDT3115 SDT3116 SDT3117 SDT3118

sdt31

Contextual Info: 8368602 SOL ITRON DEVICES INC 95D 02885 d ËT| û3kat,DE GDGEÛÛS 1 T- 3 „J&lttren Ä T O [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER T~ t~( Devices, Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

2N6127

Abstract: Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129
Contextual Info: ^/outran ra y <gT ©Ä¥ÄIL®( Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 63) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)