SDRAM CMOS Search Results
SDRAM CMOS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 74HC14D | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, Inverter, SOIC14 | Datasheet | ||
| 74VHC541FT | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, Octal Buffer, TSSOP20B | Datasheet | ||
| 74HC04D | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, Inverter, SOIC14 | Datasheet | ||
| TC4069UBP | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, Inverter, DIP14 | Datasheet | ||
| TC74HC04AP | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, Hex Inverter, DIP14 | Datasheet |
SDRAM CMOS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K4S561632E
Abstract: K4S560432E K4S560432E-TC K4S560832E
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Original |
256mb166mhz16bita10/ap+4 | |
K4S280432E
Abstract: K4S281632E TL 2262 decoder
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Original |
128mbx4/x8/x16110ma140ma+5 | |
K4S643232H
Abstract: K4S643232
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Original |
a10/apk4s643232hk4s643232 | |
K4S280432F
Abstract: K4S281632F K4S281632F-TC
|
Original |
128mb110ma140ma166mhz+4 | |
tcl 14175
Abstract: 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H
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Original |
a10/aptcl 141758mb sdramk4s641632h-tc+3 | |
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Contextual Info: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.0 September 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 September 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM |
Original |
16bita10/ap | |
K4S280432F
Abstract: K4S281632F
|
Original |
128mb110ma140ma166mhz+3 | |
K4S643232HContextual Info: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.4 August 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 August 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History |
Original |
a10/apk4s643232h | |
K4S161622H-TC60
Abstract: K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
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Original |
200mhza10/apk4s161622h-tc60k4s161622h+3 | |
K4S280432E
Abstract: K4S281632E
|
Original |
128mbx4/x8/x1616bita10/ap+2 | |
Samsung 16M SDRAM B-die
Abstract: K4S510432B-TC K4S511632B
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Original |
512mb16bita10/apsamsung 16m sdram b-die+2 | |
K4S1G0732B
Abstract: K4S1G0732B-TC75 RA12
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Original |
a10/apk4s1g0732bk4s1g0732b-tc75ra12 | |
K4S511632B
Abstract: K4S510432B-TC
|
Original |
512mb16bita10/apk4s511632b+1 | |
K4S641632H
Abstract: K4S641632H-TC K4S640432H-TC K4S640832H
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Original |
a10/apk4s641632hk4s641632h-tck4s640432h-tc+1 | |
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K4S640432H-TC
Abstract: K4S640832H K4S641632H K4S641632H-TC
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Original |
a10/apk4s640432h-tck4s640832hk4s641632h+1 | |
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Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.3 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 January. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM |
Original |
128mbx4/x8/x16110ma140ma+3 | |
CCD BTContextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RG(S) CMOS SDRAM 16Mx16 Mobile SDRAM (Mobile Function support) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RG(S) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target) |
Original |
k4s56163lc-rg16mx16256mbccd bt | |
K4S561632E
Abstract: sdram cmos K4S560432E K4S560432E-TC K4S560832E K4S5604
|
Original |
256mb166mhza10/apk4s561632e+5 | |
K4S280432F
Abstract: K4S281632F
|
Original |
128mb110ma140ma166mhz+3 | |
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Contextual Info: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.2 June. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 June. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History |
Original |
256mb166mhz16bita10/ap | |
K4S641632H
Abstract: K4S640432H-TC K4S640832H K4S641632H-TC tcl 14175 8Mb samsung SDRAM
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Original |
a10/apk4s641632hk4s640432h-tck4s640832h+3 | |
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Contextual Info: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.1 April. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Apr. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History |
Original |
128mbx4/x8/x1616bita10/ap | |
K4S161622H-TC60
Abstract: K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
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Original |
200mhza10/apk4s161622h-tc60k4s161622h+3 | |
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Contextual Info: Low Power SDRAM V DD 2.5V, V DDQ 1.8V K4S64163LF Preliminary CMOS SDRAM 4Mx16 Low Power SDRAM Revision 0.1 February 2001 Rev. 0.1 Feb. 2001 Low Power SDRAM (V DD 2.5V, V DDQ 1.8V) K4S64163LF Preliminary CMOS SDRAM Revision History Revision 0.0 (February 7. 2001, Preliminary) |
Original |
k4s64163lf4mx1616bit200us | |