SDL703 Search Results

7033

Contextual Info: ENGINEERING SPECIFICATIONS * T O T T O R I SANYO E L E C T R I C CO. LTD E L E C T R O N I C E E V I C E D I V I S I O N S-S 1 I . T n W k i o > - C t o T * t t » T l ~ S 1 l< 8 Ä 0 J i p in D ate*- July 30, 1990 LA SER T ype: DIODE SD L — 7 0 3 3 —lO l

SDL-3060-001

Abstract: SDL LASER Laser SDL SDL-6032 SDL-3030 SDL-3060 SDL6032 SDL3030 Laser SDL 20 SDL-3034-101
Contextual Info: SANYO SEMI CON DUCTOR CORP 32E í 7 ^ 7 0 7 ^ 0000471 5 Laser Diode —K L a s e r D iodes Absolut« ì M a xim u m Rí tin g s m m « T yp e No. ïvw m Ä 'ÿtlii't} Features L ig h t O u tp u t K fftS ffliS O p e ra tin g Temperature Po Topr Po Ith lo p

SDL Laser diode

Abstract: SDL7032 SDL laser diode 65 SDL-3039-011 SDL3038-031 sdl-6030 SDL-4034-151 EN81 Laser SDL PD445
Contextual Info: Laser Diode «i K Laser Diodes & m. « Pin Package Dimenson Connection Type Type Type No. SDL-3140-CED A $ 5.6 SDL-3144-ŒD A i,n,m i ,n,m SDL-3149-011 A i Absolute Maximum Ratings Ä Electro-Optical Characteristics mt f t f t N B ìt t m ti Light Output Operating

SDL LASER

Abstract: SDL-3060-001 SDL-3140-101 SDL-4 SDL Laser diode
Contextual Info: SANYO SEMI CONDUCTOR CORP 3EE 7T=]7D7b DGGfi471 D T - 9/-Û S 5 Laser Diode Is—‘I f b' L a s e r Diodes Tc=25*C Absolute Maximum Ratings m m « Type No. C > f é ll Package Pin # Ä Features Dimension Connection Type TtfcH* Light Output B t t Æ H â lî

tt 3034

Abstract: LI 803-2 SDL3060-001 SDL-3060-001 LA 4032 sanyo SDL-3039-011 SDL-3030 G1231 IC tt 3034 SDL-6032
Contextual Info: SANYO SEMICONDUCTOR CORP l ' - V i f - i t — K U —t f y j t - VITTG Tb GOISBOT bQ3 M T S A J b3E » Laser Diode L a s e r D io d e KSDLv'J - X i ± , ß L § H f i • ^ {H i4 < 7 G a A lA s ^ 7 > ^ .rn i# Ü 7 )l✓ O W t ~ F V t o ls — if < D £ % 1 k £ là iò k U

SDQIE0504

Abstract: marking code 56l SDL703
Contextual Info: Power Inductors Shielded-SMT Square 7 x 7 mm POWER INDUCTORS SDQIE0504 Series Used in high frequency DC/DC converters, computers and other electronics applications. Magnetically shielded for low EMI radiation. Electrode connected to core ferrite. Low DC resistance.

sanyo 850 nm

Contextual Info: ENGINEERING SPECIFICATIONS * SAgYO 7 0 7 7 0 ? i SANYO EtiCTJtlC CO. 1 T £> E L E C T R O N I C D E V I C E D J VI S I O J I S - 3 I J . T » t > I k * * * • f: V * T * t l # t í - 5 i i . * i i Jipan Date: April 23, 1990 LASER Type'- DIODE S D L -7 0 3 2 -1 0 2

Contextual Info: ENGINEERING SPECIFICATIONS L.Ä T O T T O R ] S AN Y O E L E C T R O N I C S - 3 1 1 . T # U E L E C T R I C C S V T i i k l t n * [ f - S k i. 680 I CE C O . . L TD D I V I S I O N i - C k i J i p i o Date; July 30, 1990 LASER Type: DIODE SDL-7033-111 [T E N T A T IVE ]