SDF2N100 Search Results
SDF2N100 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SDF2N100 | Solitron Devices | VDS (V) = 1000, Id Continuous Tc=25C (A) = 2, Idm Pulsed (A) = 8, RDS (On) (Ohms)... | Scan | 175.52KB | 1 | ||
| SDF2N100JAAD | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 175.52KB | 1 | ||
| SDF2N100JAAS | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 175.52KB | 1 | ||
| SDF2N100JAAU | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 175.52KB | 1 | ||
| SDF2N100JABD | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 175.52KB | 1 | ||
| SDF2N100JABS | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 175.52KB | 1 | ||
| SDF2N100JABU | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 175.52KB | 1 |
SDF2N100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SDF2N100JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55 |
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SDF2N100JABVGD1N | |
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Contextual Info: Æutron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 3340-4 TEL: 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FE T 1000V, 2.0A , ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt.(l) |
OCR Scan |
SDF2N100 di/dt-100A/nS | |
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Contextual Info: Æ lltron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD.• RIVIERA BEACH, FLORIDA 33404 TEL : 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-594G N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo It.(1) Drai n-Gate Vo 1tage |
OCR Scan |
863-594G | |
benq
Abstract: SDF2N100
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OCR Scan |
SDF2N100 MIL-S-19500 benq |