SDF12N Search Results

Contextual Info: SDF12N90GAFVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55

1DS6

Abstract: SDF12N100
Contextual Info: Æ lltro n FRODUCT DEVICES.INC. CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER' SYMBOL D r a in - s o u r c e V o l t . l D r a in - G a t e V o lt a g e (R g s =1.0M o ) (1 ) G a t e - S o u r c e V o lt a g e Con t i nuous

Contextual Info: SDP/F12N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 12A G D S 0.55 @ VGS=10V,ID=6A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

Contextual Info: ^ ¡ » lit r o n UFA? dev ,E E S . _ PRODUCT N-CHANNEL ENHANCEMENT MOS FET 900V, 12A , 0 .9 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo 1t . 1) Drai n-Gate Vo 1tage ( R g s » 1 . 0 M ci ) (1) Gate-Source Voltage Con t inuous

HiSpi

Abstract: SS550
Contextual Info: Æ lltron PRODUCT DEVICES.INC. ¡177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 5 1 -343S • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, UNITS SYMBOL D r a i n - s o u r c e Vo 1t .(1)

Contextual Info: ^¡»litron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 4 0 7 863-5946 N-CHANNEL ENHANCEMENT MOS FET TEL: ( 4 0 7 ) 8 4 8 - 4 3 1 1 • TLX: 51-3435 »FAX: ABSOLUTE MAXIMUM RATINGS PARAMETER 900V, SYMBOL UNITS Drain-source Volt.(l)

Contextual Info: Green Product SDP F 12N06 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 12A 0.61 @ VGS=10V Rugged and reliable.

1F12A

Abstract: SDF12N90
Contextual Info: Æ ilt r o n câtâlq product n F v ic F s .in c . N-CHANNEL ENHANCEMENT MOS FET Vdc VDGR 900 Vdc VGS ±20 ID - 12 Ade A IDM 48 PD 300 W 2.4 W/°C •c O p e ra tin g & S to ra g e Temp. TJ/Tsig Therm al R th Jc -5 5 TO +150 0 .4 2 "C/W TL 300 «C R e s is t a n c e