SD203 - 12 Search Results

SD200

Abstract: TO52 package 2 GHz operating high power gain jfets CD10 CD102 SSTSD201 125OC Junction FETs JFETs MARKING 201 SD200DC
Contextual Info: High-Speed Analog N-Channel Enhancement-Mode DMOS FETS CORPORATION SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 FEATURES • High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz • Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz

HA202

Contextual Info: High-Speed Analog N-Channel Enhancement-Mode DMOSFETS SD200/SD201 /SD202/SD203/SSTSD201 /SSTSD203 FEATURES DESCRIPTION • High g a in . 8.0 dB min @ 1 GHz • Low Noise. 5.0 dB max @ 1 GHz

SD200DC

Abstract: SSTSD201 2 GHz operating high power gain jfets CD10 SD200 SD201 SD201DC SD202 SD202DC SD203
Contextual Info: High-Speed Analog N-Channel Enhancement-Mode DMOS FETS LLC SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 FEATURES • High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz • Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz

2 GHz operating high power gain jfets

Abstract: SD203 CD10 QFN40 s0202 SD200 SD201 SD202 SSTSD201 SSTSD203
Contextual Info: High-Speed Analog N-Channel Enhancement-Mode DMOS FETS SD200/SD201 /SD202/SD203/SSTSD201 /SSTSD203 FEATURES DESCRIPTION • High g a i n . 8.0 dB min @ 1 GHz • Low N dB max @ 1 GHz

TL 431 SO8

Abstract: 2SD203 SD203DC P3NF
Contextual Info: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R

Contextual Info: The SD 200 extends the proven System pro M compact series by a new range of switch disconnectors which provides state-of-the-art safety and comfort. The series is available with 1 to 4 poles with rated currents from 16 to 63 A and provides disconnection properties

SD203 - 12

Abstract: SD202DC SD203 SD20 SD200CHP SD201 SD203DC SD2012 SD200
Contextual Info: TOPAZ SEMICONDUCTOR OSE I | l O S S E S t D O O l O O l a Q S D 2 0 0 ,S D 201 ' * 0 2 0 2 ,S D 2 0 3 S E M IC O N D U C T O R 7 ¿I - i ? N-CHAHNiL ENHANCEMENT-^ODE LATERAL D - M O S FETs O R D ER IN G IN FO R M ATIO N SD202DC SD203DC SD20ÛDC SD2Q1DC TO-52,4 Lead Pkg.

Contextual Info: High-Speed Analog N-Channel Enhancement-Mode DMOSFETS calocflc CORPORATION v SD200/SD201 /SD202/SD2Û3/SSTSD201 /SSTSD203 FEATURES DESCRIPTION • High g a in . 8.0 dB min @ 1 GHz • Low Noise. 5.0 dB max @ 1 GHz

Secowest Italia Spa

Abstract: SD203 Secowest 200G SD103 SD403 SD203 - 12 D697
Contextual Info: SECOUEST ITALIA SPA 54E D • 0111407 OQOQQQE b ■ T ~ O Z "OÍ AVAILABLE DEVICES ' "SUid" typed - . ' ' t„„ code t max. ft ¡; ^ / -! »* Voilage Range (V} W%ÉM •Í^vJÍ'ÁÍÍ (2) . 200 400 600 SOoftôûG 120O|14GO 11600 1:800 20002200 02 04 06 08 1 10 12 I 14 16 18 20 22

Metal Detector

Abstract: long range metal detector P160B metal detector sensor metal detector probe sensor metal detectors circuit "metal detector" P15LR P15AV barrel DC Power Connector
Contextual Info: Product Selection Guide PRIME CONTROLS, INC. METAL SENSING SOLUTIONS This guide provides a quick overview of Prime’s product line. Three Double Detection Groups PRIME offers three specialized Double Metal Detector groups. Probes used within a group will not work with the detectors from another

signetics sd200

Abstract: SIGNETICS SD201 041 itt diode SD201 Scans-0010592 SD200 SD202 SD203
Contextual Info: S ig n e tic s Field Effect Transistors-D-MOS C O N N E C T IO N D IG R A M SD 200 - Series D-MOS G E N E R A L D E S C R IP TIO N D ouble -diffused silicon fie ld -e ffe c t transistors w ith insulated gates, in ten ded fo r u.h .f. and genera purpose r.f.

sd301

Abstract: SD306
Contextual Info: D -M O S A BSO LU T E M A XIM U M R A T IN G S T a = 25°C unless otherwise noted (cont’d) v SB (V) Parameter V DS (V) Drain-to-Source V SD Source-to-Drain V DB M Drain-to-Substrate Source-to-Substrate V GS (V) Gate-to-Source V GB <v l Gate-to-Substrate

ic 7500

Abstract: LED IR ISD201 ISD202 ISD204 ISQ201 ISQ202 ISQ203 ISQ204 ISQ74
Contextual Info: ISOCOM COMPONENTS Dual Channel 'en eral Purpose 8 Pin DIP Part Number Features Current Transfer Ratio If = 10mA Min % ILJ2 N EW ISD1 ISD5 .3D74 100 Two Isolators in one Package Independently Isolated from each other Isolation Breakdown Voltage V (pk) Continuous

S0211

Abstract: SD306 5200vg
Contextual Info: DIMOS ELECTR ICA L CH A RA CTERISTICS = +25°C unless otherwise specified b v S b <v > IV Drain-To-Substrate SourceTo-Substrate <DSS fc«A) Zero Bias V GB = 0V Source * Open V g b = »v Drain = Open Drain Current IS D iO W nA> Orain-To-Source V d s = +15V