SD-100 PHOTODETECTOR Search Results

Contextual Info: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits, particularly for OEM system designers.

A 2531 optocoupler

Abstract: a 2530 opto hcpl2530sd 2531 2530 OPTO HCPL-4502 HCPL2531
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.

pulse transformer 4502

Abstract: A 2531 optocoupler 4502S fairchild 1011 opto E90700 HCPL4502 HCPL2531
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.

Contextual Info: CENTRONIC LTD 4SE D m S lfi? Silicon Photodetectors 0000013 S • C E N T f - y l-ifS " Series 3T Extended IR Response, High Speed Series 3T photodetectors are specifically designed for high speed infra-red laser pulse detection. The detector structure which is designed to achieve full depletion at 60 volts reverse bias, makes use of ultra high resistivity silicon to

Silicon Detector

Abstract: hybrid charge pinFET 900nm LED
Contextual Info: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits,

pulse transformer 4502

Abstract: v027 6N136S HCPL2531
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.

4502 C

Abstract: 6N136S HCPL2531
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL 6N135, 6N136 HCPL-2503 HCPL-4502 DUAL-CHANNEL HCPL-2530 HCPL-2531 DESCRIPTION The HCPL-4502/HCPL-2503, 6N135/6 and HCPL-2530/HCPL-2531 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.

centronic osd100 6

Abstract: LD20-3 MD100-3 MD25-3 OSD100-3 OSD200-3 QD100-3 QD320-3
Contextual Info: CENTRONIC LTD 4SE D m s ifl? □□□□on i Silicon Photodetectors « cent Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly suited to high speed pulsed applications in the region of 900nm and for other applications where the low capacitance obtained at 100

InGaAs photodiode spectral response

Abstract: InGaAs photodiode TO-46 photodiode InGaAs NEP
Contextual Info: InGaAs Photodetectors SD 008-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 0.184 [4.67] 88° CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE SCHEMATIC 0.016 [0.40]

Contextual Info: InGaAs Photodetectors SD 008-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 0.184 [4.67] 88° CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE SCHEMATIC 0.016 [0.40]

300X1

Contextual Info: InGaAs Photodetectors SD 004-11-41-211 FEATURES DESCRIPTION • Low noise • Low dark current • High response APPLICATIONS The SD 004-11-41-211 is a high sensitivity low noise characteristics InGaAs photodiode packaged in a leaded hermetic TO-46 metal package.

Contextual Info: InGaAs Photodetectors SD 012-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 0.184 [4.67] 88° CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE SCHEMATIC 0.016 [0.40]

Contextual Info: InGaAs Photodetectors SD 060-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.360 [9.14] 0.075 [1.90] 3X 0.018 [0.5] 0.240 [6.10] 0.325 [8.25] 113° 0.165 [4.19] CHIP CHIP DIMENSIONS INCH [mm] 0.50 [12.7] 1 ANODE 2 CASE GROUND 0.079 [2.02] 3 CATHODE SCHEMATIC 0.079 [2.02]

Contextual Info: InGaAs Photodetectors SD 004-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.029 [0.73] 0.059 [1.50] 3X 0.019 [0.48] 0.055 [1.40] 0.184 [4.67] 88° CATHODE CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.016 [0.40] 3 CATHODE

1310nm photodiode

Abstract: photodiode InGaAs NEP
Contextual Info: InGaAs Photodetectors SD 004-11-41-211 PACKAGE DIMENSIONS INCH [mm] Ø 0.210 [5.33] 0.029 [0.73] 0.065 [1.66] 4X Ø 0.019 [0.48] Ø 0.055 [1.40] 1 Ø 0.184 [4.67] 4 2 3 CHIP 0.145 [3.69] BOTTOM VIEW 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 3 ANODE 4 CASE GROUND

L1310

Contextual Info: InGaAs Photodetectors SD 012-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.059 [1.50] 3X 0.019 [0.48] 0.165 [4.19] 1 0.184 [4.67] 88° 2 3 CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 1 ANODE 2 CASE GROUND 0.019 [0.500] 3 CATHODE SCHEMATIC

QD320-3T

Abstract: ARSA od320 QD100-3T centronic osd100 6 centronic osd100 ir OSD15-3T QD50-3T OSD100-3T OSD50-3T
Contextual Info: CENTRONIC LTD 45E D • m S l f i ? Q0G0013 5 ■! CENT T - t f l- if g " Silicon Photodetectors Series 3T Extended IR Response, High Speed Series 3T photodetectors are specifically designed for high speed infra-red laser pulse detection. The detector structure which is designed to achieve full depletion at 60 volts reverse bias, makes use of ultra high resistivity silicon to

Q0320

Abstract: centronic osd100 6 OSD100-0 OSD5-0 QD7-0 QD50-0 LD20-0 LD35-0 MD100-0 MD25-0
Contextual Info: CENTRONIC LTD M5E D mSlfi? 0GQ00D7 T •CENT Silicon Photodetectors_Series 0 General Purpose The Series 0 are a range of general purpose silicon photodiodes designed for operation at a reverse bias voltage of up to 30 volts for applications where low capacitance or fast speed of response are important.

h11f1 application

Abstract: H11F1 40 FET Analog Devices
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11f1 variable resistor 500k

Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F3

Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

OSD15-5T

Abstract: centronic osd100 6 OSD1-5T OSD35-5T OSD60-5T FIG27 MAA 436 Centronic osd15-5t osd60 OSD100-5T
Contextual Info: CENTRONIC LTD 4SE D • mSlfi? □□□□□El 4 ■CENT Silicon Photodetectors Tz"t//~t/S~ Series 5T Blue Sensitive, Biased or Photovoltaic Operation The Series 5T are a range of low cost detectors offering high blue sensitivity coupled with high shunt resistance and low dark leakage

Lucent 1417H4A

Contextual Info: Data Sheet . July1998 . • . m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations o NetLight 1417G4A and 1417H4A ATM/SONET/SDH Transceivers • Transmitter disable input ■ Wide dynamic range receiver with InGaAs PIN photodetector

Contextual Info: Data Sheet July 1998 microelectronics group Lucent Technologies Bell Labs Innovations NetLight 1417J4A 1300 nm Laser Gigabit Transceiver Transmitter disable input Wide dynamic range receiver with InGaAs PIN photodetector TTL signal-detect output Low power dissipation