SCS212AM Search Results

Contextual Info: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

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Contextual Info: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

SCS212AM

Contextual Info: SCS212AM Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 12A QC 18nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.