SCS210K Search Results

Contextual Info: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

SCS210K

Abstract: SCS210KG
Contextual Info: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: SCS210KE2 SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A/10A* QC 17nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.