SCS THYRISTOR Search Results

TKAL 240

Abstract: TKAL
Contextual Info: Æ T SCS-THOMSON ^ 7# MOMitlÊTrGMDÊS GENERAL PURPOSE & INDUSTRIAL HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A «ALTERNISTORS» - BIDIRECTIONAL DEVICES FOR REACTIVE CIRCUITS AND FREQUENCIES UNDER FOR 400 Hz Type VDRM V 100 Arms / Tcase TKAL TKAL TKAL

Thyristor mw 134

Abstract: scs thyristor l1a marking BRY62 Tetrode pnpn
Contextual Info: BRY62 J v _ SILICON P-N -P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a m icrominiature plastic package. It is intended for use as a program­ mable trigger device SCS = silicon controlled switch . Q UICK REFERENCE D A T A

scs thyristor

Abstract: TO72 package
Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage

scs thyristor

Abstract: icer capacitor NTE239
Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage

cb 478

Abstract: CB-480 CB-478 THDG516C
Contextual Info: SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A GATE TURN-OFF THYRISTORS GTO Type •t c m A VDRM (V) Vr r m * (V) ■t r m s (A) Tcase (°C) ■t s m (A) Rth (°C/W) Package THDG 224 S THDGT 224 S THDG 225 S

606-4

Abstract: sensitive gate thyristors
Contextual Info: / Z T SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HO [fiì ILi gTO®M(gS MEDIUM POWER THYRISTORS & TRIACS < 100 A THYRISTORS PLASTIC SENSITIVE GATE THYRISTORS Tamb = 25°C Type <0 Vr r m (A See NOTE 4 Arms / Tçonnex. = 25°C TLS 106-05— 6 TLS 107-05— 6

Contextual Info: ^ 5 3 ^ 3 1 0025444 323 « A P X N AMER PHILIPS/DISCRETE BRY62 L7E D 7 V SILICON P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a microminiature plastic envelope. It is intended for use as a program­ mable trigger device SCS = silicon controlled switch .

TYN408G

Abstract: tyn 1225 tyn 682
Contextual Info: r Z J SCS-TNOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MogœiiL[iM MôÊi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS PLASTIC CASE Tamb = 25°C •o Type See NOTE V (A) 4 Arms I T e a s e = 90°C TXN / TYN 054 — VRRM = VDRM 004 Tj = 110°C

BTW68-200N

Abstract: 1200N T25-17 BTW68-1000N
Contextual Info: 3QE ì> r z 7 Ä T# • 7=52^237 00313=10 3 ■ - " T - Z S - n SCS-THOMSON «^ [1L I C T © « S BTW68-200N -> 1200N S G S-TH0MS0N THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY EASY MOUNTING ON HEATSINK

ESM thyristor

Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Contextual Info: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000

diode lt 205

Abstract: thyristor 12V 1A
Contextual Info: /S T SCS-THOMSON ö^O !MSi(gir^(QM(g§ MDS35 DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d r m = V r r m UP TO 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V{RMS) DESCRIPTIO N The MDS35 family are consist of one rectifier

Diode LT 410

Contextual Info: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier

transistor 1a16

Contextual Info: £ t7 SCS-THOMSON ilL tH O T « ! T D A 2 5 9 3 SYNCHRO AND HORIZONTAL DEFLECTION CONTROL FOR COLOR TV SET LINE OSCILLATOR two levels switching PHASE COMPARISON BETWEEN SYNCHROPULSE AND OSCILLATOR VOLTAGE 0 1 , EN­ ABLED BY AN INTERNAL PULSE, (better para­

F0810MH

Abstract: F0810 L125 FAST SWITCHING scr
Contextual Info: i & m - SCS-THOMSON ILI F0810XH FAST SWITCHING SCR fe a tu r es • It RMS = 8 A = 200V to 800V a tq = 20^ts max , V drm DESCRIPTION The F0810xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for high frequency

Thyristor mw 134

Abstract: transistor KIA-70 Emitter Turn-Off thyristor scs thyristor BRY62 TRANSISTOR 1383 LT99 L7E transistor M.H. Transistor 1383 transistor
Contextual Info: • bbsa'm □ □25l444 323 ■ APX N AMER PHILIPS/DISCRETE BRY62 L7E ]> SILICON P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a m ic ro m in ia tu re plastic envelope. It is intended fo r use as a program ­ m able trigger device SCS = silico n co n tro lle d sw itch .

DIAC ecg6407

Abstract: ECG6407 ECG6411 ECG6408 DIAC ecg6411 ECG6412 diode TRANSISTOR ECG ECG diac DIAC EQUIVALENT circuit Bidirectional Diode Thyristors
Contextual Info: Special Purpose Devices cont'd 4 anode PNP EMITTER <eA ) PNP COLLECTOR NPH BfcSE CATHOOI ÇÂTE PNP BASE NPN <Gc l 6 n p n EMITTER Silicon Controlled Switch (SCS) ECG Typo BVCBO Volts bvebo BVCER Volts h fe Volts Min IGT Max mA -7 0 -7 0 -7 0 0.1 1.0 70

Contextual Info: rz 7 SCS-THOMSON PLQ 08 PLQ 1 Ä 7# FAST RECOVERY RECTIFIER DIODES • VERY FAST FORWARD AND REVERSE RE­ COVERY DIODES S U IT E D FO R ■ SW ITCHING POWER TRANSISTORS DRIVER CIRCUITS SERIES DIODES IN ANTISATURA­ TION CLAM P SPEED UP DIODE IN DISCRETE DARLINGTON.

DIAC ecg6407

Abstract: h06 diode ECG6407 ECG6408 scs thyristor ECG6411 Bidirectional Diode Thyristors DIAC ecg6411 ECG diac ECG6412
Contextual Info: Special Purpose Devices cont'd (A ) Ç 4 ANOOE PNP E M IT TE R ft 4 <Ga > PNP COLLECTOR NPN BASE CATHOOI ANODE GATE NPN COLLECTOR ( GC ) > NPN EM IT TE R Silicon Controlled Sw itch (SCS) BVCBO Volts B V e BO Volts BV CER Volts h fe Min IGT Max mA VGT Max

mos Turn-off Thyristor

Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
Contextual Info: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­

148-600B

Abstract: 1000B 600B 700B 800B TGF148-600B
Contextual Info: 3ÜE J> m 7^2^ 537 GÜ3mDb 3 • rz7 SCS-THOMSON s 6 Ä 7# M œ m iO T « S ^ P 'Z ô -ll s -t h o «To n T G F 1 4 8 -6 0 0 B - * 1 2 0 0 B FAST SWITCHING THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY EXCELLENT SURGE CAPABILITY

Contextual Info: SPE C IAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) On Voltage (Volts) Effective Current (Amps) Surge Current (Amps) Holding Current

Contextual Info: SPECIAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) V bo VT Itrms *T SM 'H o ld Pd 6415 395 40 to 60 1.5 1 13 50 850 6416 395 55 to 65

DS709

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS709-00004-0v01-E 32-bit ARMTM CortexTM-M4F based Microcontroller MB9B160R Series MB9BF166M/N/R, MB9B1567M/N/R, MB9BF168M/N/R  DESCRIPTION The MB9B160R Series are a highly integrated 32-bit microcontrollers dedicated for embedded controllers

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion