SCR 8A Search Results

NTE5402

Abstract: NTE5401 NTE5405 NTE5404 NTE5406 NTE5400 NTE5403
Contextual Info: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with

NTE5402

Abstract: NTE5405 NTE5404 NTE5401 thyristor SCR 600V 8A NTE5406 NTE5400 To92 thyristor datasheet NTE5403
Contextual Info: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR−thyristor) rated at 0.8 amps RMS maximum on−state current, with

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD X0405 Preliminary SCR 4A SCR  DESCRIPTION The UTC X0405 is a 4A SCR, it uses UTC’s advanced technology to provide customers with highly sensitive triggering levels, etc. The UTC X0405 is suitable for all applications, such as motor

Contextual Info: TS820-B  SENSITIVE SCR FEATURES IT RMS = 8A VDRM/VRRM = 400 to 600V IGT < 200µA A DESCRIPTION A The TS820-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.

600B

Abstract: TS820-B
Contextual Info: TS820-B  SENSITIVE SCR FEATURES IT RMS =8A VDRM/VRRM = 400 or 600V IGT < 200µA SMD PACKAGE A A G DESCRIPTION K The TS820-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.

D304 diode

Abstract: tr/P45/D304 diode
Contextual Info: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility

universal MOTOR speed control using scr

Abstract: CI23 DC motor speed control circuit with SCR C123 SCR tf5d C123 C123A C123B C123C C123E
Contextual Info: SCR I ISOLATED TAB 8A R M S C l 23 I Up to 600 Volts The C l23 is a molded silicon plastic SCR which incorporates General Electric’s new POWER-GLAS glassivation process. This process provides for an intimate void-free bond between the silicon chip and the glass

NTE5438

Abstract: NTE5437
Contextual Info: NTE5437 & NTE5438 Silicon Controlled Rectifier SCR 8 Amp Senstitive Gate, TO220 Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required.

NTE5442

Abstract: NTE5444 NTE5446 NTE5448
Contextual Info: NTE5442 thru NTE5448 Silicon Controlled Rectifier SCR 8 Amp Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature,

Contextual Info: NTE5442 thru NTE5448 Silicon Controlled Rectifier SCR 8 Amp Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high - volume consumer phase - control applications such as motor speed, temperature,

Contextual Info: TS820-B/T SENSITIVE SCR FEATURES • It rm s = 8A ■ V drm /V rrm = 400, 600V, 700V ■ Ig t < 200^A ■ SMD PACKAGE DESCRIPTION The TS820-B/T series of SCR use a high perform­ ance TOPGLASS PNPN technology. The parts are intended for general purpose appli­

NTE5442

Abstract: scr speed control dc motor NTE5448 NTE5444 NTE5446
Contextual Info: NTE5442 thru NTE5448 Silicon Controlled Rectifier SCR 8 Amp, TO127 Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high−volume consumer phase−control applications such as motor speed, temperature,

SCR C116

Abstract: ELLS 110 C116 C116A C116D C116B C-116 C116M AT-40 C116C
Contextual Info: Reverse Blocking Triode Thyristor SCR 8ARM S Model C116 Up to 600 Volts The Cl 16 is a molded silicon plastic SCR which incorporates General Electric’s new POWER-GLAS glassivation process. This process provides for an intim ate void-free bond between the silicon chip and the glass coating significantly improving perform ance and

SCR 30A 400V

Abstract: NTE314
Contextual Info: NTE314 Silicon Controlled Rectifier SCR Power Regulator Switch Description: The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere RMS, 400 Volt power supply and computer control applications to +100°C maximum junction.

rgk 20/2

Abstract: TS820-B TS820-T TS820 ts820b
Contextual Info: TS820-B/T  SENSITIVE SCR FEATURES A IT RMS =8A VDRM/VRRM = 400, 600V, 700V IGT < 200µA SMD PACKAGE A A DESCRIPTION G K K The TS820-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology.

NTE5437

Abstract: NTE5438
Contextual Info: NTE5437 & NTE5438 Silicon Controlled Rectifier SCR 8 Amp Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

ECG5414

Abstract: ECG5448 ECG5412 ECG5411 ECG5444 ECG5406
Contextual Info: Silicon Controlled Rectifiers SCR Phase Control - SCR IT M ax Forward Current (Amps) VDRM IT A ve-C onduction Angle = 180° IT R M S - All Conduction Angles RMS Av. .8A 3A .5 A 1.9 A 4A 5A •7 A 8A 10 A 2.5 A 3.2 A 4.3 A 5.1 A 6.2 A ECG5400 ECG5411 60 ECG5401

600B

Abstract: TS420-B
Contextual Info: TS420-B  SENSITIVE SCR FEATURES IT RMS =4A VDRM/VRRM = 400 or 600V IGT < 200µA A DESCRIPTION A The TS420-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.

SCR 600V 8A

Abstract: TS420-600B RL33 ts4204
Contextual Info: TS420-B  SENSITIVE SCR PRELIMINARY DATASHEET FEATURES IT RMS = 4A VDRM/VRRM = 400 to 600V IGT < 200µA A DESCRIPTION A The TS420-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.

nte5534a

Abstract: NTE5534 SCR 535 A scr control circuit for welding
Contextual Info: NTE5534A Silicon Controlled Rectifier SCR 600V, 50 Amp, TO3 Isolated Square Pack Description: The NTE5534A is a general purpose SCR in a TO3 isolated high power square pack designed for use in applications where power handling and power dissipation are critical, such as solid state relays,

Contextual Info: Universal Lamp Alarm Relay SCR9L The SCR series is a universal lamp alarm relay designed to sense the failure of lashing or steady LED beacon lamps or obstruction lamps. The SCR Series energizes when one or more lamps fail. It will monitor the operation of one to eight beacon

opto scr

Abstract: JTM-10 JCMW40-100 JTM-70-060 JCMW08-040 JCMW08 SCR15 JCM-12 JCMW08-020 JTM-16-120
Contextual Info: SCR’s AND TRIACS DICE January 1995 CODIFICATION NEW CODIFICATION J C M W IT RMS VDRM X 1/10 TECHNIC CODE METALLIZATION DELIVERY FORM JUNCTION F UNCTION T RIAC = C SCR = T MESA FRONT SIDE BACK SIDE 2 NiAu NiAu 4 PbSn PbSn (183°C) PbSnAg (300°C) 5 PbSnAg

JCMW40-100

Abstract: JTM-70-060 opto scr TM-04 SCR TRIAC 635 TRIACS 40A triac 30a JCMW08-020 JTM-45-080 JTM-10
Contextual Info: SCR’s AND TRIACS DICE January 1995 CODIFICATION NEW CODIFICATION J C M W IT RMS VDRM X 1/10 TECHNIC CODE METALLIZATION DELIVERY FORM JUNCTION FUNCTION TRIAC = C SCR = T MESA TECHNOLOGY FRONT SIDE BACK SIDE 2 NiAu NiAu 4 PbSn PbSn (183°C) PbSnAg (300°C)

w41k

Abstract: thyratron tq2 ZO 103 TRIAC 2N5064 equivalent variable dimmer diagram solid state relay incandescent lamp dimmer SCR based power factor improvement circuit diagram equivalent transistor LM317T Thyratron tq 51 schematic diagram ac-dc inverter using scr
Contextual Info: SECTION 5 SCR CHARACTERISTICS Edited and Updated is necessary to apply a negative reverse voltage to the device anode, causing the holes and electrons near the two end junctions, J1 and J3, to diffuse to these junctions. This causes a reverse current to flow through the SCR. When