SCHOTTKY MARKING JT Search Results

marking JY sot-23

Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40

Diode LT 02

Abstract: ERB83-006 T460 T760 T930
Contextual Info: ERB83-006 2A : Outline D raw ings SCHOTTKY BARRIER DIODE : Features • vF : Marking Low VF Ä7-3-K : £R Super high speed switching. Color code : •SÄJfcS High reliability by planer design Abridged type name Voltage cioss Oy rnq : Applications Lot No.

Marking 3D TO-236AB

Abstract: T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77
Contextual Info: SPRAGUE/SENICOND 8514019 GROUP TBD SPRAG UE. D • SS13Û5D □003t.3D S E M IC O N D S / IC S 93D 5 03630 T ^ { \ r ^ f O SMALL-OUTLINE D IO D ES Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C vf Device Type Description Marking BAR18 Schottky

A83-006

Abstract: ERA83-006 T151 T460 T760 T930 marking code a83
Contextual Info: ERA83-006 ia : Outline Drawings SCHOTTKY BARRIER DIODE Features • ftv F H S / jv : Marking low vf t r i ­ -a - K : fl Super high speed sw itching. color code : White •EH: ? 7 Voltage class High reliability by planer d e s ig n . D y b Nq in s e rtio n .

TRA1

Contextual Info: SCHOTTKY BARRIER DIODE EP05Q04 0.s a /40 v FEA TU RES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO O Packaged in 8mm tape Device Marking ~ ~ _Month of Mfg. A=Jan. B = Feb.—L=Dec. Year of Mfg. 7=1997

marking 2U 77 diode

Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Contextual Info: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1

ERA81-004

Abstract: T810 ERA8
Contextual Info: E RA81-004 1a i'a-yl'lF— ' O J T ÿ ' f j K • f l-B '+ '/i : Outline Drawings SCHOTTKY BARRIER ■ t t f t : Features • te V F ■ S Low VF : Marking tjv • x -r Ä 7 “ 3 —K : Super high speed switching. C o lo r c o d e ffl : S ilv e r High reliability by planer design

Contextual Info: SBL830 - SBL860 VISHAY 8.0A SCHOTTKY BARRIER RECTIFIER I[l ITEMIl / pow eb sehconw ictor Features TO-22QAC JT D _ L ) Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 12.70 14.73 G Mechanical Data_ 'I Case: Molded Plastic Terminals: Plated Leads, Solderable per

Contextual Info: 1GWJ42 T O SH IB A TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Average Forward Current : I jt AV — (Ta = 52°C) Reverse Recovery Time : trr = 35ns (MAX.) Low Forward Voltage : Vf M ~ 0.55V (MAX.)

marking code aaat

Abstract: AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS6 * I 60 V 1A i ÜJ Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x S ü E • P rrsm <b2.6 »2 Rating M Main Use • Switching Regulator • D C /D c u y jt— ? Unit : mm Weight 0.19« (Typ >

SG DIODE MARKING

Abstract: 2KV DIODE diode sg 45
Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 5 M U nit : mm W eight 1.54g Typ w h jtH H W 15 0 V 2 0 A 4.5 Feature >Tj=150°C • Tj=150°C 1 High lo Rating » Full Molded 1 Low Ir=30|jA >7H Æ - J b K •ÎSIr=30|jA

d2s diode

Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:

Alpha Industries SOD323 Marking

Abstract: 069 marking SMS3939-026 MARKING EG SCHOTTKY MARKING jt SMS3926-022 SMS3926-023 SMS3927-022 SMS3928-022 SMS3929-021
Contextual Info: Surface Mount Schottky Quad Mixer Diodes EBAlpha Features • Tight Parameter Distribution ■ Available as Ring Quads, Crossover Quads, Bridge Quads and Octoquads ■ 100% DC Tested ■ Designed for High Volume Commercial Applications ■ Available in Tape and Reel Packaging

DIODE d3s

Abstract: MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE D3S4M 40V 3A Feature • Tj=15CfC • Tj=150°C • P r r sm P K ^ V î/ x S ü E • P rrsm Rating Main Use • Sw itching Regulator • DC/D c u y jt— ? • D C /D C Converter • W M . f - h s O A t lf g • Hom e Appliance, G am e, Office Automation

marking D63

Contextual Info: Central CMDD6263 Semiconductor Corp. SUPERmini™ HIGH VOLTAGE SCHOTTKY DIODE FEATURES: • HIGH VOLTAGE 70V • LOW FORWARD VOLTAGE • PART OF CENTRAL'S SPACE SAVING SUPERmini'" SURFACE MOUNT PACKAGE FAMILY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6263 is a High Voltage, low Vp, Silicon Schottky diode in a

Contextual Info: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S Sem iconductor Corp. SUPER-MINI SCHOTTKY DIODES DESCRIPTION The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky diodes, epoxy molded in a super-mini surface mount package, designed forfastswitching applications requiring

JTR1611-001

Abstract: XBS203V17
Contextual Info: XBS203V17 JTR1611-001 Schottky Barrier Diode, 2A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.35V TYP. ●Rectification Forward Current : IF(AV)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V

1N5822

Contextual Info: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,

ch340s

Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR

MMBT3904DW

Contextual Info: WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

MARKING 25J

Abstract: MD3FLDL-TTL-10G MD3FLDL-TTL-15T MD3FLDL-TTL-25J MD3FLDL-TTL-70F
Contextual Info: ENGINEERED COdPONENTS C bOE D • 33 3 32 Û 3 00007T3 G3T ■ EGC Cozu profite t^ L COM PATIBLE M ìn ì DI MULTI LOGIC DELA / # T2L inputs and outputs # Delays stable and precise # 8-pin DIP package Leads - thru-hole, J, Gull Wing or Tucked # Available in delays from 5 to 100ns - each

Contextual Info: ENGINEERED COdPONENTS C bOE D • 33 3 32 Û 3 00007T3 G3T ■ EGC Cozu profite t^ L COMPATIBLE M ìn ì DI MULTI LOGIC DELA / # T2L inputs and outputs # Delays stable and precise # 8-pin DIP package Leads - thru-hole, J, Gull Wing or Tucked # Available in delays from 5 to 100ns - each

Contextual Info: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz

ed marking code transient

Abstract: ml marking SRF2020
Contextual Info: TAIWAN SEMICONDUCTOR % SRF2020 - SRF20150 Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220A B RoHS C O M P L IA N C E .nu*.;: _azuw.:\kvc uw . ¿0\W} I m;r. n;r>>./ jtr.«pi x - /T Features 4-v+ ❖ 4- F or su rfa ce m ou nted application Lo w po w e r loss, high e fficie n cy