SCHOTTKY DIODES ANTI PARALLEL Search Results

L 9101

Abstract: ups 700 HSCH-9201 HSCH-9251 VF10 HSCH-9101 Avago Technologies Schottky HSCH9201
Contextual Info: HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Description The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy MBE

MA40420

Abstract: mixer 8-12 GHZ schottky diodes Anti parallel MA40410
Contextual Info: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT PACKAGED DIODES CHIPS BEAM LEADS ANTI-PARALLEL BEAM LEADS BRIDGE QUADS

MA4E2508L-1112

Abstract: MA4E2502 MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112
Contextual Info: SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

J-STD-20C

Abstract: SMGS21 STD-20C SMSG21 J-STD-20-C A 0503
Contextual Info: SMGS21 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS21 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband doubler and harmonic mixer. It is in anti-parallel pair

Contextual Info: SMGS21 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS21 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband doubler and harmonic mixer. It is in anti-parallel pair

schottky diode MACOM SPICE model Cjpar

Abstract: MACOM Schottky Diode
Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

MA4E2502

Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

Ablebond 8380

Abstract: Ablestick 8380 VCT-20 w625c
Contextual Info: GaAs Flip Chip Schottky Diodes DMK2790-000, DMK2308-000, DMK8001-000 Features Single - DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000

soft solder die bonder

Contextual Info: MA4E2508 Series SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features V 1.00 Case Style 1112 Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

MA4E2508L-1112

Abstract: MA4E2502 MA4E2508L-1112T MA4E2508L-1112W
Contextual Info: MA4E2508L-1112 SURMOUNTTM Low Barrier Silicon Schottky Diodes: Anti-Parallel Pair V 1.00 Case Style 1112 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

Ablebond 8380

Abstract: Ablestick 8380 DMK2308-000 DMK2783-000 DMK2790-000 DMK8001-000 B183
Contextual Info: GaAs Flip Chip Schottky Diodes Features Single - DMK2783-000, DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000 ■ Designed for Low Junction Capacitance

Ablebond 8380

Abstract: Ablestick 8380 DMK2308-000 DMK2783-000 DMK2790-000 DMK8001-000 diodes in mil grade
Contextual Info: GaAs Flip Chip Schottky Diodes Features Single - DMK2783-000, DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000 ■ Designed for Low Junction Capacitance

Ablebond 8380

Contextual Info: GaAs Flip Chip Schottky Diodes Features Single - DMK2783-000, DMK2790-000 • Designed for High Volume Designs ■ High Frequency 20–100 GHz ■ Exceeds Environmental Requirements for MIC & Hybrid Applications Anti-Parallel - DMK2308-000 ■ Designed for Low Junction Capacitance

2a 200v schottky diode

Abstract: 2X101S20
Contextual Info: 2 3 2 2 3 1 1 4 1 3 27 2 T- 4 SO 4 Anti-Parallel Parallel APT2X100S20J APT2X101S20J APT2X100S20J 200V 100A APT2X101S20J 200V 100A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power

Contextual Info: GaAs Schottky Diodes Flip Chip Anti Parallel Low CT TM MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 45 fF Typ. Low Series Resistance (7  Typ.) Cut-Off Frequency > 500 GHz Description

APT2X100S20J

Abstract: APT2X101S20J H100 100C1600
Contextual Info: 2 3 2 2 3 1 1 4 1 3 SO 4 Anti-Parallel Parallel APT2X100S20J APT2X101S20J 27 2 T- 4 APT2X100S20J 200V 100A APT2X101S20J 200V 100A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power

Contextual Info: 2 3 2 2 3 1 1 4 1 3 27 2 T- 4 SO 4 Anti-Parallel Parallel APT2X60S20J APT2X61S20J APT2X60S20J APT2X61S20J 200V 200V 60A 60A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times

MS8250

Abstract: P2613
Contextual Info: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz

1100nC

Abstract: APT20M36BLL APT2X60S20J APT2X61S20J H100
Contextual Info: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X60S20J APT2X61S20J 27 2 T- 4 APT2X61S20J APT2X60S20J 200V 200V 75A 75A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times

MS8251

Abstract: P2613 schottky diodes Anti parallel P261
Contextual Info: GaAs Schottky Diodes TM Flip Chip Anti Parallel Low CT MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.) ● Cut-Off Frequency > 500 GHz

Contextual Info: 2 3 2 2 3 1 1 4 1 3 27 2 T- 4 SO 4 Anti-Parallel Parallel APT2X30S20J APT2X31S20J APT2X30S20J APT2X31S20J 200V 200V 30A 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times

APT20M36BLL

Abstract: APT2X30S20J APT2X31S20J H100
Contextual Info: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30S20J APT2X31S20J 27 2 T- 4 APT2X31S20J APT2X30S20J 200V 200V 45A 45A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times

Contextual Info: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 65 fF Typ. Low Series Resistance (3  Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads