SCHOTTKY DIODES 200A Search Results
SCHOTTKY DIODES 200A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H | Datasheet | ||
CUHS20F30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H | Datasheet | ||
CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H | Datasheet | ||
CLS10F40 |
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Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E | Datasheet | ||
CUHS20F60 |
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H | Datasheet |
SCHOTTKY DIODES 200A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FYPF2004DN
Abstract: FFPF30U60DN fairchild korea ffpf30u20s FFPF04F150S 81663-9 FYPF2006DN FFPF14X150S *F30U60DN
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Schottky diode 50A 100v
Abstract: diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode
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77fiScà 2C100: 2C200: Schottky diode 50A 100v diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor | |
SEMELAB
Abstract: TO-276 TO276AA SMD05 SML10SIC03NJC
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SML10SIC03NJC SMD05 O-276AA) 2x10A SEMELAB TO-276 TO276AA SMD05 SML10SIC03NJC | |
Contextual Info: SML10SIC03YC TO257AA PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are |
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SML10SIC03YC O257AA 2x10A | |
SML10SIC03YCContextual Info: SML10SIC03YC TO257AA PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are |
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SML10SIC03YC O257AA 2x10A SML10SIC03YC | |
Contextual Info: SML10SIC03YIC TO257AA ISOLATED PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are |
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SML10SIC03YIC O257AA 2x10A | |
Contextual Info: 37LÔSEE DGlflMMT ?□! « P L S B w GEC PLESSEY SEMICONDUCTORS DC1303/12/21 GaAs SCHOTTKY X-BAND MICROSTRIP LID DETECTOR DIODES These diodes are used in detector applications requiring a better noise figure than can be achelved with silicon diodes and as sensitive broadband detectors at high microwave |
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DC1303/12/21 250mW 200mW DC1303 DC1312 DC1321 600nV | |
reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
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MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor | |
Contextual Info: SML05SIC03EVC EVC-257 PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x5A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are |
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SML05SIC03EVC EVC-257 | |
Contextual Info: SML05SIC03EVC EVC-257 PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x5A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are |
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SML05SIC03EVC EVC-257 | |
Contextual Info: SML10SIC03NC SMD1 TO-276AB PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are |
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SML10SIC03NC O-276AB) 2x10A | |
6AI diode
Abstract: diode L2.70 USD735 USD745 USD700 USD740 USD750
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USD735 USD740 USD745 USD750 USD735 USD700 USD740 USD745 6AI diode diode L2.70 USD750 | |
smps 12 volt 3 amp
Abstract: 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 5A SF smps 12 volt 5 VOLT 20 AMP smps
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00DD041 500mA 200mA 000pF 100KH2 100KH2 smps 12 volt 3 amp 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 5A SF smps 12 volt 5 VOLT 20 AMP smps | |
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IDW30S120
Abstract: 30S120 D30S120
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30S120 IDW30S120 IDWxxS120 IDW30S120 30S120 D30S120 | |
d15s120
Abstract: 15S120 schottky 400v
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15S120 IDW15S120 IDWxxS120 d15s120 15S120 schottky 400v | |
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the |
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30S120 IDW30S120 IDWxxS120 | |
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the |
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15S120 IDW15S120 IDWxxS120 | |
IDW20S120
Abstract: TP200
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IDW20S120 IDWxxS120 IDW20S120 TP200 | |
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the |
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IDW20S120 IDWxxS120 | |
STTH
Abstract: mig welding tig welder circuit tig welding half bridge diode mig welder ISOTOP mig welder half bridge converter schottky 400v DO247
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O-220AB O-220FPAB FLDIODE0307 STTH mig welding tig welder circuit tig welding half bridge diode mig welder ISOTOP mig welder half bridge converter schottky 400v DO247 | |
MC2C45
Abstract: 2C45
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77fiS 2C45T. MC2C45 2C45 | |
Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the |
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10S120 IDW10S120 IDWxxS120 | |
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRF20020 R THRU MBRF200100(R) SCHOTTKY DIODES MODULE TYPE 200A Features 200Amp Rectifier 20-45 Volts High Surge Capability Types Up to 100V VRRM FULL PACKAGE A K B C Maximum Ratings Part Number Maximum Recurrent Peak Reverse |
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MBRF20020 MBRF200100 200Amp MBRF20035 MBRF20040 MBRF20060 MBRF20080 |