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    SCHOTTKY DIODES 200A Search Results

    SCHOTTKY DIODES 200A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS15S40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H Datasheet
    CUHS20F30
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 30 V, 2 A, US2H Datasheet
    CUHS15S60
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Datasheet
    CLS10F40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E Datasheet
    CUHS20F60
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Datasheet

    SCHOTTKY DIODES 200A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FYPF2004DN

    Abstract: FFPF30U60DN fairchild korea ffpf30u20s FFPF04F150S 81663-9 FYPF2006DN FFPF14X150S *F30U60DN
    Contextual Info: Fast Recovery/Schottky Diodes Product Line Card Fast Recovery Diodes FRDs Schottky Barrier Diodes (SBDs) Fairchild's broad portfolio of Fast Recovery Diodes has been specifically designed to address Ultra Fast Soft Recovery, high-speed and high-voltage design


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    PDF

    Schottky diode 50A 100v

    Abstract: diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode
    Contextual Info: OLTRONICS INC SO l>E|t,7?fl5IÌM □ODGD4S 4 Oltronics, Inc. D Power Schottky Diodes 148 Sidney St. • Cambridge, M A 02139 • Tel. 617 354-6534 Semiconductor O.E.M. THE MC SERIES DIODE MC Series Diodes are Schottky rectifiers of superior performance due to their stability at high


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    77fiScà 2C100: 2C200: Schottky diode 50A 100v diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    SEMELAB

    Abstract: TO-276 TO276AA SMD05 SML10SIC03NJC
    Contextual Info: SML10SIC03NJC SMD05 TO-276AA PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. 1 2 3 The devices employ Semelab’s proven


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    SML10SIC03NJC SMD05 O-276AA) 2x10A SEMELAB TO-276 TO276AA SMD05 SML10SIC03NJC PDF

    Contextual Info: SML10SIC03YC TO257AA PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are


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    SML10SIC03YC O257AA 2x10A PDF

    SML10SIC03YC

    Contextual Info: SML10SIC03YC TO257AA PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are


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    SML10SIC03YC O257AA 2x10A SML10SIC03YC PDF

    Contextual Info: SML10SIC03YIC TO257AA ISOLATED PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are


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    SML10SIC03YIC O257AA 2x10A PDF

    Contextual Info: 37LÔSEE DGlflMMT ?□! « P L S B w GEC PLESSEY SEMICONDUCTORS DC1303/12/21 GaAs SCHOTTKY X-BAND MICROSTRIP LID DETECTOR DIODES These diodes are used in detector applications requiring a better noise figure than can be achelved with silicon diodes and as sensitive broadband detectors at high microwave


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    DC1303/12/21 250mW 200mW DC1303 DC1312 DC1321 600nV PDF

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


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    MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor PDF

    Contextual Info: SML05SIC03EVC EVC-257 PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x5A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are


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    SML05SIC03EVC EVC-257 PDF

    Contextual Info: SML05SIC03EVC EVC-257 PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x5A Semelab’s Silicon Carbide SiC Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are


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    SML05SIC03EVC EVC-257 PDF

    Contextual Info: SML10SIC03NC SMD1 TO-276AB PACKAGE SiC SCHOTTKY DIODE VR 300V IF 2x10A Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage, zero reverse recovery, and superb hightemperature performance. The devices employ Semelab’s proven hermetic packaging technology and are


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    SML10SIC03NC O-276AB) 2x10A PDF

    6AI diode

    Abstract: diode L2.70 USD735 USD745 USD700 USD740 USD750
    Contextual Info: USD735 USD740 USD745 USD750 POWER SCHOTTKY RECTIFIERS 16A Pk, up to 50V DESCRIPTION The USD700 series of Schottky power rectifiers is ideally suited for output rectifiers and catch diodes in high frequency low voltage power supplies. FEATURES • Very Low Forward Voltage


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    USD735 USD740 USD745 USD750 USD735 USD700 USD740 USD745 6AI diode diode L2.70 USD750 PDF

    smps 12 volt 3 amp

    Abstract: 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 5A SF smps 12 volt 5 VOLT 20 AMP smps
    Contextual Info: "SO OLTRONICS INC DËJbTYflSTM 00DQ041 ? J ~ o Oltronics Inc. J '- Z S 'f r f Data Sheet No. 108401 Power Schottky Diodes 148 Sidney St. • Cambridge, MA 02139 • Tel. 617 354-6534 15 Amp, 20 Volt Power Schottky Rectifier LC 1520 DESCRIPTION The Oltronics LC 1520 is a Schottky rectifier diode of superior performance due to its low for­


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    00DD041 500mA 200mA 000pF 100KH2 100KH2 smps 12 volt 3 amp 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 5A SF smps 12 volt 5 VOLT 20 AMP smps PDF

    IDW30S120

    Abstract: 30S120 D30S120
    Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    30S120 IDW30S120 IDWxxS120 IDW30S120 30S120 D30S120 PDF

    d15s120

    Abstract: 15S120 schottky 400v
    Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    15S120 IDW15S120 IDWxxS120 d15s120 15S120 schottky 400v PDF

    Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    30S120 IDW30S120 IDWxxS120 PDF

    Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 15S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW15S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    15S120 IDW15S120 IDWxxS120 PDF

    IDW20S120

    Abstract: TP200
    Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    IDW20S120 IDWxxS120 IDW20S120 TP200 PDF

    Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW20S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW20S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    IDW20S120 IDWxxS120 PDF

    STTH

    Abstract: mig welding tig welder circuit tig welding half bridge diode mig welder ISOTOP mig welder half bridge converter schottky 400v DO247
    Contextual Info: New ultrafast and Schottky diodes for welding applications Two new high performance product families for low power consumption welders For the new generation of welding equipment, high power secondary rectification produces around half of the power losses, which are mainly caused by conduction in the diodes.


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    O-220AB O-220FPAB FLDIODE0307 STTH mig welding tig welder circuit tig welding half bridge diode mig welder ISOTOP mig welder half bridge converter schottky 400v DO247 PDF

    MC2C45

    Abstract: 2C45
    Contextual Info: 677859, UlTRüNICS INC 3« »Ë|k77as DDG0013 5 f OLTRONICS, INC. 73 Tremont St. • Boston, MA 02108 • ^ - « W i Data Sheet No. 18303 Power Schottky Diodes Tel. 617 354-6534 Semiconductor O.E.M. 200 AMP, 45 Volt Power Schottky Rectifier MC 2C45 DESCRIPTION


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    77fiS 2C45T. MC2C45 2C45 PDF

    Contextual Info: SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta s heet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ! SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the


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    10S120 IDW10S120 IDWxxS120 PDF

    Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRF20020 R THRU MBRF200100(R) SCHOTTKY DIODES MODULE TYPE 200A Features 200Amp Rectifier 20-45 Volts High Surge Capability Types Up to 100V VRRM FULL PACKAGE A K B C Maximum Ratings Part Number Maximum Recurrent Peak Reverse


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    MBRF20020 MBRF200100 200Amp MBRF20035 MBRF20040 MBRF20060 MBRF20080 PDF