SCHOTTKY DIODE ST Search Results

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Marking Code 72

Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

BAS270

Abstract: BP317 BAS27
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.

1PS59SB20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

SOD80C

Abstract: M3D121 BAS85 smd diode marking Av 100H01 smd diode package sod80 PHILIPS DIODE SOD80 marking 37 schottky SMD 157 diode diode smd marking V
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS85 Schottky barrier diode Product specification Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an

BAS70L

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

BAS40L

Abstract: marking code s6 SOD-882L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

sk0032

Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032 Type：SB120T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

Schottky Diode 40V 2A

Abstract: "Schottky Diode"
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0045A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0045A Type：SB240 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

SK-0028A

Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

"Schottky Diode"

Abstract: 1N5822 data sheet
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

schottky diode

Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032A Type：SB140T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

SAS diode

Abstract: high frequency diode BES100 "high frequency Diode"
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

Contextual Info: Philips Semiconductors Product spscMcation Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is • High breakdown voltage

ZLLS400

Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

D06S60

Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

Schottky diode TO220

Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery