SCHOTTKY DIODE 46 Search Results

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

smd schottky diode marking 72

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic

4420 Transistor

Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

ZHCS1000

Abstract: ZLLS1000 ZLLS1000TA ZLLS1000TC
Contextual Info: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

ZHCS2000

Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode
Contextual Info: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage

L05 diode

Abstract: ZLLS500 ZHCS500 ZLLS500TA ZLLS500TC 8-NP
Contextual Info: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

Diode 20A/30v

Abstract: SCHOTTKY 20A 40V Schottky Diode 40V 5A ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC IR-1120
Contextual Info: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

ZLLS1000

Abstract: Diode 20A/30v ZHCS1000 ZLLS1000TA ZLLS1000TC
Contextual Info: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

TS16949

Abstract: ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC schottky diode high voltage
Contextual Info: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage

Marking Code 72

Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

str 6707

Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic

BAS270

Abstract: BP317 BAS27
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.

L05 diode

Abstract: ZHCS500 ZLLS500 ZLLS500TA ZLLS500TC
Contextual Info: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low forward

BAS240

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS240 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS240 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.

transistor R1d

Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

SAS diode

Abstract: high frequency diode BES100 "high frequency Diode"
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

12 VOLT 2 AMP smps circuit

Abstract: circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v
Contextual Info: Selection Guide of SiC Schottky Diode in CCM PFC Applications - August 2006 Selection Guide of SiC Schottky Diode in CCM PFC Applications Silicon Carbide Schottky diodes are ideal devices for CCM PFC boost diode applications because of the superior reverse recovery characteristics – zero reverse recovery current. Selection of

SAS diode

Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Contextual Info: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN

lm 4453

Contextual Info: Ordering number: EN4656 No.4656 _FP105 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications F eatures • Composite type with a PNP transistor and a Schottky barrier diode contained in one packge,

Contextual Info: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.

smd diode GW

Abstract: diode ESM 315 K451
Contextual Info: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =

91802A

Abstract: IRF7353D1
Contextual Info: PD- 91802A IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description

IRF7353D1

Contextual Info: PD - 91802B IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description