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    SCHOTTKY DIODE 3A Search Results

    SCHOTTKY DIODE 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS15S40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H Datasheet
    CLS10F40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E Datasheet
    CUHS20F60
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Datasheet
    CUHS20F30
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 30 V, 2 A, US2H Datasheet
    CUHS15S60
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Datasheet

    SCHOTTKY DIODE 3A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


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    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 PDF

    "Schottky Diode"

    Abstract: 1N5822 data sheet
    Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope: This specification applies to silicon schottky diode chips Device No. SK-0055A Type:1N5822 2. Structure: 2-1. Planar type:Silicon Schottky Diode 2-2.Electrodes: Top side(Anode):Ti/Ni/Ag


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    SK-0055A Type1N5822 size55mils 55mils1 thickness12 038mm area44 padAnode48 characteristicsTa25 "Schottky Diode" 1N5822 data sheet PDF

    schottky diode

    Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope: This specification applies to silicon schottky diode chips Device No. SK-0060A Type:SB340 2. Structure: 2-1. Planar type:Silicon Schottky Diode 2-2.Electrodes: Top side(Anode):Ti/Ni/Ag


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    SK-0060A TypeSB340 size60mils 60mils1 thickness12 038mm area48mils 48mils1 padAnode54 schottky diode PDF

    MA24D60

    Abstract: MA24D50 a150 ct NMiniP2 PACKAGE
    Contextual Info: Newly-developed thin package enables producing slim-electronics products 2A/3A type Schottky Barrier Diode MA24D50/60 „ Overview This newly developed 2A/3A type schottky barrier diode is suitable for on-board power supplies and power unit of mobile devices. As


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    MA24D50/60 MA24D50 MA24D60 MA24D50 a150 ct NMiniP2 PACKAGE PDF

    diode hp 2835 schottky

    Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
    Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship


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    PDF

    5082-2835 diode

    Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
    Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship


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    PDF

    IRF7807D2

    Contextual Info: PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier


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    IRF7807D2 IRF7807D2 PDF

    marking PA

    Abstract: CPH3106 CPH6701 "marking PA"
    Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.


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    ENN6007A CPH6701 CPH6701 CPH3106 SBS001, CPH6701] marking PA "marking PA" PDF

    4B2 diode

    Abstract: S1 DIODE schottky CS3257 CBTS3257 CBTS3257D CBTS3257DB CBTS3257DS CBTS3257PW JESD22-A114 JESD22-A115
    Contextual Info: INTEGRATED CIRCUITS CBTS3257 Quad 1-of-2 multiplexer/demultiplexer with Schottky diode Product data Philips Semiconductors 2002 Sep 27 Philips Semiconductors Product data Quad 1-of-2 multiplexer/demultiplexer with Schottky diode FEATURES CBTS3257 PIN CONFIGURATION


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    CBTS3257 JESD78 JESD22-A114, JESD22-A115 4B2 diode S1 DIODE schottky CS3257 CBTS3257 CBTS3257D CBTS3257DB CBTS3257DS CBTS3257PW JESD22-A114 PDF

    6n303

    Abstract: fdfs6n303 fdfs SOIC-16
    Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.


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    FDFS6N303 6n303 fdfs6n303 fdfs SOIC-16 PDF

    mch3412

    Abstract: ta3173 DIODE MARKING 3173 TA-317
    Contextual Info: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)


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    ENN6981 CPH5805 MCH3412) SBS006) CPH5805] mch3412 ta3173 DIODE MARKING 3173 TA-317 PDF

    MCH5702

    Abstract: MCH6201 SBS006
    Contextual Info: Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating


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    ENN7076 MCH5702 MCH5702 MCH6201 SBS006, MCH5702] SBS006 PDF

    A1 dual diode

    Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
    Contextual Info: ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


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    ZX3CD3S1M832 500mV A1 dual diode Schottky Diode 40V 5A dual MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC PDF

    MLP832

    Abstract: ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
    Contextual Info: ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


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    ZX3CD3S1M832 500mV MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC PDF

    Contextual Info: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A


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    ZXTNS618MC ZX3CDBS1M832 PDF

    PC 13003 TRANSISTOR

    Abstract: TO126 13003 TRANSISTOR
    Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    TIP42C O-220 TIP127 O-126 BU406A PC 13003 TRANSISTOR TO126 13003 TRANSISTOR PDF

    PC 13003 TRANSISTOR

    Abstract: 13009* transistor 13009 PNP Transistor NPN Transistor Pair transistor std 13007 13007* transistor 13007 TRANSISTOR
    Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    TIP42C O-220 Tran-5000 O-126 BU406A PC 13003 TRANSISTOR 13009* transistor 13009 PNP Transistor NPN Transistor Pair transistor std 13007 13007* transistor 13007 TRANSISTOR PDF

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Contextual Info: TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V -H TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Built-in a schottky barrier diode


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    TPC8A07-H MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR PDF

    CPH5811

    Abstract: MCH3406 SBS004 2171A marking QM
    Contextual Info: CPH5811 Ordering number : ENN8234 CPH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting.


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    CPH5811 ENN8234 MCH3406) SBS004) CPH5811 MCH3406 SBS004 2171A marking QM PDF

    Contextual Info: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171


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    CPH5805 MCH3412) SBS006) CPH5805] PDF

    10.00 ju

    Abstract: IRF7422D2
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8


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    IRF7422D2 Combinining40 10.00 ju IRF7422D2 PDF

    Contextual Info: EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package


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    ENA1821 EMH2801 A1821-5/5 PDF

    AON2701

    Abstract: AON2701L 2x2 dfn DFN 2x2 PACKAGE
    Contextual Info: AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or


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    AON2701 AON2701/L AON2701 AON2701L 2x2 dfn DFN 2x2 PACKAGE PDF

    Contextual Info: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package


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    VEC2813 ENA0384 A0384-6/6 PDF