SCHOTTKY DIODE 3A Search Results
SCHOTTKY DIODE 3A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H | Datasheet | ||
CLS10F40 |
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Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E | Datasheet | ||
CUHS20F60 |
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H | Datasheet | ||
CUHS20F30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H | Datasheet | ||
CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H | Datasheet |
SCHOTTKY DIODE 3A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
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ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 | |
"Schottky Diode"
Abstract: 1N5822 data sheet
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SK-0055A Type1N5822 size55mils 55mils1 thickness12 038mm area44 padAnode48 characteristicsTa25 "Schottky Diode" 1N5822 data sheet | |
schottky diodeContextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope: This specification applies to silicon schottky diode chips Device No. SK-0060A Type:SB340 2. Structure: 2-1. Planar type:Silicon Schottky Diode 2-2.Electrodes: Top side(Anode):Ti/Ni/Ag |
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SK-0060A TypeSB340 size60mils 60mils1 thickness12 038mm area48mils 48mils1 padAnode54 schottky diode | |
MA24D60
Abstract: MA24D50 a150 ct NMiniP2 PACKAGE
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MA24D50/60 MA24D50 MA24D60 MA24D50 a150 ct NMiniP2 PACKAGE | |
diode hp 2835 schottky
Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
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5082-2835 diode
Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
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IRF7807D2Contextual Info: PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier |
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IRF7807D2 IRF7807D2 | |
marking PA
Abstract: CPH3106 CPH6701 "marking PA"
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ENN6007A CPH6701 CPH6701 CPH3106 SBS001, CPH6701] marking PA "marking PA" | |
4B2 diode
Abstract: S1 DIODE schottky CS3257 CBTS3257 CBTS3257D CBTS3257DB CBTS3257DS CBTS3257PW JESD22-A114 JESD22-A115
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CBTS3257 JESD78 JESD22-A114, JESD22-A115 4B2 diode S1 DIODE schottky CS3257 CBTS3257 CBTS3257D CBTS3257DB CBTS3257DS CBTS3257PW JESD22-A114 | |
6n303
Abstract: fdfs6n303 fdfs SOIC-16
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FDFS6N303 6n303 fdfs6n303 fdfs SOIC-16 | |
mch3412
Abstract: ta3173 DIODE MARKING 3173 TA-317
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ENN6981 CPH5805 MCH3412) SBS006) CPH5805] mch3412 ta3173 DIODE MARKING 3173 TA-317 | |
MCH5702
Abstract: MCH6201 SBS006
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ENN7076 MCH5702 MCH5702 MCH6201 SBS006, MCH5702] SBS006 | |
A1 dual diode
Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
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ZX3CD3S1M832 500mV A1 dual diode Schottky Diode 40V 5A dual MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC | |
MLP832
Abstract: ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
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ZX3CD3S1M832 500mV MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC | |
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Contextual Info: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A |
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ZXTNS618MC ZX3CDBS1M832 | |
PC 13003 TRANSISTOR
Abstract: TO126 13003 TRANSISTOR
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TIP42C O-220 TIP127 O-126 BU406A PC 13003 TRANSISTOR TO126 13003 TRANSISTOR | |
PC 13003 TRANSISTOR
Abstract: 13009* transistor 13009 PNP Transistor NPN Transistor Pair transistor std 13007 13007* transistor 13007 TRANSISTOR
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TIP42C O-220 Tran-5000 O-126 BU406A PC 13003 TRANSISTOR 13009* transistor 13009 PNP Transistor NPN Transistor Pair transistor std 13007 13007* transistor 13007 TRANSISTOR | |
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTORContextual Info: TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V -H TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Built-in a schottky barrier diode |
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TPC8A07-H MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
CPH5811
Abstract: MCH3406 SBS004 2171A marking QM
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CPH5811 ENN8234 MCH3406) SBS004) CPH5811 MCH3406 SBS004 2171A marking QM | |
Contextual Info: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171 |
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CPH5805 MCH3412) SBS006) CPH5805] | |
10.00 ju
Abstract: IRF7422D2
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IRF7422D2 Combinining40 10.00 ju IRF7422D2 | |
Contextual Info: EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package |
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ENA1821 EMH2801 A1821-5/5 | |
AON2701
Abstract: AON2701L 2x2 dfn DFN 2x2 PACKAGE
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AON2701 AON2701/L AON2701 AON2701L 2x2 dfn DFN 2x2 PACKAGE | |
Contextual Info: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package |
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VEC2813 ENA0384 A0384-6/6 |