SCHOTTKY DIODE 3A Search Results

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

"Schottky Diode"

Abstract: 1N5822 data sheet
Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

schottky diode

Contextual Info: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag

MA24D60

Abstract: MA24D50 a150 ct NMiniP2 PACKAGE
Contextual Info: Newly-developed thin package enables producing slim-electronics products 2A/3A type Schottky Barrier Diode MA24D50/60 „ Overview This newly developed 2A/3A type schottky barrier diode is suitable for on-board power supplies and power unit of mobile devices. As

diode hp 2835 schottky

Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship

5082-2835 diode

Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship

IRF7807D2

Contextual Info: PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

marking PA

Abstract: CPH3106 CPH6701 "marking PA"
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.

4B2 diode

Abstract: S1 DIODE schottky CS3257 CBTS3257 CBTS3257D CBTS3257DB CBTS3257DS CBTS3257PW JESD22-A114 JESD22-A115
Contextual Info: INTEGRATED CIRCUITS CBTS3257 Quad 1-of-2 multiplexer/demultiplexer with Schottky diode Product data Philips Semiconductors 2002 Sep 27 Philips Semiconductors Product data Quad 1-of-2 multiplexer/demultiplexer with Schottky diode FEATURES CBTS3257 PIN CONFIGURATION

6n303

Abstract: fdfs6n303 fdfs SOIC-16
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

mch3412

Abstract: ta3173 DIODE MARKING 3173 TA-317
Contextual Info: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)

MCH5702

Abstract: MCH6201 SBS006
Contextual Info: Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating

A1 dual diode

Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
Contextual Info: ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

MLP832

Abstract: ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
Contextual Info: ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

Contextual Info: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A

PC 13003 TRANSISTOR

Abstract: TO126 13003 TRANSISTOR
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

PC 13003 TRANSISTOR

Abstract: 13009* transistor 13009 PNP Transistor NPN Transistor Pair transistor std 13007 13007* transistor 13007 TRANSISTOR
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Contextual Info: TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V -H TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Built-in a schottky barrier diode

CPH5811

Abstract: MCH3406 SBS004 2171A marking QM
Contextual Info: CPH5811 Ordering number : ENN8234 CPH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting.

Contextual Info: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171

10.00 ju

Abstract: IRF7422D2
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8

Contextual Info: EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

AON2701

Abstract: AON2701L 2x2 dfn DFN 2x2 PACKAGE
Contextual Info: AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or

Contextual Info: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package