SCHOTTKY 1SS357 Search Results

s31 schottky diode

Abstract: SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 MARKING TA SOD323 DIODE DIODE SCHOTTKY SOD-323 schottky 1ss357
Contextual Info: BL Galaxy Electrical Production specification Surface mounting schottky Diode 1SS357 FEATURES z Pb Small Surface Mounting Type: Lead-free SOD-323 z Low VF。 z Low IR APPLICATIONS z Surface mount schottky diode SOD-323 ORDERING INFORMATION Type No. Marking

schottky 1ss357

Abstract: 1SS357
Contextual Info: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS Mechanical Data:

free download IR circuit diagram

Abstract: s31 schottky diode schottky 1ss357 1SS357
Contextual Info: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS 1 Mechanical Data:

schottky 1ss357

Abstract: sod323 marking NO s31 schottky diode
Contextual Info: 1SS357 Surface Mounting Schottky Diode SOD-323 Features — Small Surface Mounting Type: SOD-323 — Low VF。 — Low IR Applications — Surface mount schottky diode Dimensions in inches and millimeters Ordering Information Type No. Marking 1SS357 S31 MAXIMUM RATING @ Ta=25℃

s31 schottky diode

Abstract: 1SS357
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes FEATURES z z Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 + FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

1E1A

Abstract: 1SS357
Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)

1SS357

Contextual Info: 1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.004 grams .071 1.80 .063(1.60) .006(.15)

Contextual Info: 1SS357 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

1SS357

Abstract: schottky 1ss357
Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

1SS357

Abstract: s31 schottky diode
Contextual Info: 1SS357 SCHOTTKY DIODES SOD-323 FEATURES 1.35 0.053 1.26(.050) 1.15(0.045) 1.24(.048) 2.70(0.106) 2.70(0.106) 1.80(0.071) 2.30(0.091) 2.30(0.091) 1.60(0.063) Small package Low VF, low IR 1.80(0.071) 1.60(0.063) MECHANICAL DATA .177(.007) .089(.003) 0.4(0.016)

1SS357

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)

1SS357

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)

1SS357

Contextual Info: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS357 LO W VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage VF 3 = 0.54 (Typ.) • Low Resistance C urrent IR — • Small Package SC-70 (Max.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SS357 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • Low Forward Voltage Low Resistance Current Small Package VF 3 =0.54 (Typ.) I r = 5,uA (Max.) SC-70 MAXIMUM RATINGS (Ta = 25°C) SYMBOL

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

1SS357

Contextual Info: 1SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING, Low Forward Voltage Low Resistance C urrent Sm all Package V f 3 = 0.54 (Typ.) I r = 5^A (Max.) SC-70 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC M aximum (Peak) Reverse Voltage

SS357

Abstract: diode marking NZ
Contextual Info: TOSHIBA 1SS357 TOSHIBA DIODE 1 SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Low Resistance Current Small Package VF 3 = 0.54 (Typ.) Ir = £>/“A (Max.) SC-70 il 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)