Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SCHEMATIC GSM ESD Search Results

    SCHEMATIC GSM ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B20M4SL
    Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-18.5 V, SOD-962 (SL2) Datasheet
    DF2B6M4ASL
    Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Datasheet
    DF2B7BSL
    Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Datasheet
    DF2B7ASL
    Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Datasheet
    DF2S6P2FU
    Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Unidirectional, 5.5 V, SOD-323 (USC) Datasheet

    SCHEMATIC GSM ESD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FMS2016

    Abstract: 765g
    Contextual Info: FMS2016 Advanced Product Information 1.1 SP4T GaAs Multi-Band GSM Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic V1 Available in die form Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance


    Original
    fms201622-a114-bmil-std-1686milhdbk-263+1765g PDF

    TX2 RC

    Abstract: VTX3 FMS2018 RX3 -G
    Contextual Info: FMS2018 Advanced Product Information 1.2 SP7T GaAs Multi-Band GSM – UMTS Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic Available in die form Suitable for multi-band GSM/DCS/PCS/ EDGE and UMTS applications Excellent low control voltage performance


    Original
    fms201822-a114-bmil-std-1686milhdbk-263+3tx2 rcvtx3rx3 -g PDF

    MASWSS0091

    Abstract: MASWSS0091-DIE MASWSS0091SMB tx2 control
    Contextual Info: GaAs SP6T 2.5V High Power Switch MASWSS0091 Dual/Tri/Quad-band GSM Applications Features n n n n n n V 3.00 Functional Schematic Supplied as Known Good Die Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage: 2.5V Operation Low Harmonics: -72 dBc at +35 dBm & 1 GHz


    Original
    maswss0091100pfmaswss0091smbmaswss0091-die+1tx2 control PDF

    M513

    Abstract: MASWSS0144 MASWSS0144SMB MASWSS0144TR-3000 PQFN
    Contextual Info: RoHS Compliant 2.7 V GaAs SP3T Switch: GSM - CDMA - GPS DC - 3.0 GHz GND Functional Schematic 39 pF Dedicated RF Ports GSM, CDMA, GPS Low Cross Modulation: -105 dBm Low Insertion Loss: 0.6 dB at 2 GHz High Isolation: 24 dB at 2 GHz Lead-Free 3 mm 12-lead PQFN Package


    Original
    12-leadmaswss0144m513maswss0144smb+2maswss0144tr-3000pqfn PDF

    Contextual Info: GaAs SP6T 2.5V High Power Switch MASWSS0091-DIE Dual/Tri/Quad-band GSM Applications Features • · · · · V 2.00 Functional Schematic Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage: 2.5V Operation Low Harmonics: -72 dBc at +35 dBm & 1 GHz Low Insertion Loss: 0.5 dB at 1 GHz


    Original
    maswss0091-die100pfmaswss0091smb PDF

    Contextual Info: GaAs SP6T 2.5V High Power Switch MASWSS0091-DIE Dual/Tri/Quad-band GSM Applications Features • • • • • V 1.00 Functional Schematic Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage: 2.5V Operation Low Harmonics: -72 dBc at +35 dBm & 1 GHz Low Insertion Loss: 0.5 dB at 1 GHz


    Original
    maswss0091-die100pfmaswss0091smb PDF

    Contextual Info: GaAs SP6T 2.5V High Power Switch Dual/Tri/Quad-band GSM Applications V 4P.00 MASWSS0091 Preliminary Features • · · · · Functional Schematic Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage 2.5V Operation Low Harmonics < -70 dBc at +35 dBm & 1 GHz Low Insertion Loss 0.5 dB at 1 GHz


    Original
    maswss0091100pfmaswss0091tr PDF

    FMS2014-001

    Abstract: FMS2014-001-EB FMS2014QFN MIL-HDBK-263
    Contextual Info: FMS2014QFN Preliminary Data Sheet 2.1 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels


    Original
    fms2014qfnmil-std-1686mil-hdbk-263fms2014-001+1fms2014-001-eb PDF

    RT4350

    Contextual Info: FMS2014QFN Preliminary Data Sheet 2.2 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels


    Original
    fms2014qfnmil-std-1686mil-hdbk-263rt4350 PDF

    tx2/rx2

    Abstract: RX02 TX01 MIL-HDBK-263
    Contextual Info: FMS2036 Preliminary Datasheet v2.2 SP4T GaAs Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • FUNCTIONAL SCHEMATIC: ANT Available in die form Very low Tx Insertion loss Excellent low control voltage performance Excellent harmonic performance VR1


    Original
    fms2036fms2036-000-wpfms2036-000-ebtx2/rx2+3rx02tx01mil-hdbk-263 PDF

    Contextual Info: DATA SHEET AS197-306: PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1–2.5 GHz Features Functional Schematic Multiband, multimode operation ● Positive voltage control ● Four-line logic decoder ● Excellent harmonic performance ● Handles GSM power levels


    Original
    as197-306qfn-16 PDF

    Contextual Info: Data Sheet FMS2014-001 2.0 High Power GaAs SPDT Switch Features: Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


    Original
    fms2014-001fms2014-001-trfms2014-001-tbfms2014-001-eb PDF

    AS197-306

    Abstract: AS197-306LF QFN-16 SKYWORKS QFN-16
    Contextual Info: DATA SHEET AS197-306LF: PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1–2.5 GHz Features Functional Schematic Multiband, multimode operation ● Positive voltage control ● Four-line logic decoder ● Excellent harmonic performance ● Handles GSM power levels


    Original
    as197-306lfqfn-16j-std-020as197-306+1skyworks qfn-16 PDF

    Contextual Info: DATA SHEET AS197-306: PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1–2.5 GHz Features Functional Schematic Multiband, multimode operation ● Positive voltage control ● Four-line logic decoder ● Excellent harmonic performance ● Handles GSM power levels


    Original
    as197-306qfn-16 PDF

    CW-37

    Abstract: bond wire gold MIL-HDBK-263
    Contextual Info: FMS2038 Advance Product Information v0.1 SP3T GaAs GSM/EDGE/WCDMA Switch FEATURES • • • • • • FUNCTIONAL SCHEMATIC WEDGE SP3T Switch World-class IMD3 performance Low insertion loss: 0.35 dB at 0.9 GHz High isolation: 25 dB at 1.8 GHz Excellent harmonic performance


    Original
    fms2038fms2038-000-wpfms2038-000-ebcw-37+2bond wire goldmil-hdbk-263 PDF

    CW-37

    Abstract: MIL-HDBK-263 Filtronic Compound Semiconductors
    Contextual Info: FMS2037 Advance Product Information v0.1 SPDT GaAs GSM/EDGE/WCDMA Switch FEATURES • • • • • • FUNCTIONAL SCHEMATIC WEDGE SPDT Switch World-class IMD3 performance Low insertion loss: 0.3 dB at 0.9 GHz High isolation: 26 dB at 1.8 GHz Excellent harmonic performance


    Original
    fms2037fms2037-000-wpfms2037-000-ebcw-37+2mil-hdbk-263filtronic compound semiconductors PDF

    7474 truth table

    Abstract: MIL-HDBK-263
    Contextual Info: FMS2028 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz


    Original
    fms2028fms2028-000-fffms2028-000-wpfms2028-000-eb+27474 truth tablemil-hdbk-263 PDF

    AS192-000

    Contextual Info: data sheet AS192-000: PHEMT GaAs IC High-Power SP4T Switch 0.1–2.5 GHz Features Simplified Schematic 4 symmetric RF paths l Positive voltage control l High IP3 l Excellent harmonic performance l Handles GSM power levels l Available in 100% RF tested chip form


    Original
    as192-000 PDF

    AS192-000

    Contextual Info: DATA SHEET AS192-000: PHEMT GaAs IC High-Power SP4T Switch 0.1–2.5 GHz Features Simplified Schematic 4 symmetric RF paths Positive voltage control ● High IP3 ● Excellent harmonic performance ● Handles GSM power levels ● Available in 100% RF tested chip form


    Original
    as192-000 PDF

    Contextual Info: FMS2014-001 Data Sheet 4.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


    Original
    fms2014-001mil-std-1686mil-hdbk-263 PDF

    CW-37

    Abstract: TX2 RX2 tx2/rx2 MIL-HDBK-263 FMS2032
    Contextual Info: FMS2032 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >40dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz


    Original
    fms2032fms2032-000-fffms2032-000-wpfms2032-000-eb+4cw-37tx2 rx2tx2/rx2mil-hdbk-263 PDF

    CW-37

    Abstract: ag 1686 MIL-HDBK-263
    Contextual Info: FMS2033 Flip Chip SP6T Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • • Advance Product Info v1.0 FUNCTIONAL SCHEMATIC: Available as RF Known Good Die Flip Chip enabled Very low Tx Insertion loss High Tx-Rx isolation >42dB typ. at 1.8GHz


    Original
    fms203322-a114mil-std1686mil-hdbk-263+3fms2033-000-wpcw-37ag 1686 PDF

    FMS2014-001

    Abstract: FMS2014-001-TB FMS2014-001-TR FMS2014QFN
    Contextual Info: FMS2014-001 Data Sheet 3.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


    Original
    fms2014-001fms2014-001-trfms2014-001-tbfms2014-001-eb+1fms2014qfn PDF

    7474 truth table

    Abstract: CW-37 7474 applications MIL-HDBK-263
    Contextual Info: FMS2028 Datasheet v2.2 SP6T GaAs Multi-Band GSM Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz Excellent low control voltage performance


    Original
    fms2028fms2028-000-fffms2028-000-wpfms2028-000-eb+47474 truth tablecw-377474 applicationsmil-hdbk-263 PDF