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    Contextual Info: SN74LVC1G32-EP SINGLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES458A – DECEMBER 2003 – REVISED NOVEMBER 2005 FEATURES • • • • • • • 1 • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing


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    sn74lvc1g32-epsces458a PDF

    Contextual Info: SN74LVC1G32-EP SINGLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES458A – DECEMBER 2003 – REVISED NOVEMBER 2005 FEATURES • • • • • • • 1 • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing


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    sn74lvc1g32-epsces458a PDF

    Contextual Info: SN74LVC1G32ĆEP SINGLE 2ĆINPUT POSITIVEĆOR GATE SCES458A − DECEMBER 2003 − REVISED MAY 2004 D Controlled Baseline D D D D D D D Low Power Consumption, 10-µA Max ICC D ±24-mA Output Drive at 3.3 V D Ioff Supports Partial-Power-Down Mode − One Assembly/Test Site, One Fabrication


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    sn74lvc1g32epsces458a24-ma000-v+2a114-aa115-a PDF

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    Abstract: C101 sb marking
    Contextual Info: SN74LVC1G32-EP SINGLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES458A – DECEMBER 2003 – REVISED NOVEMBER 2005 FEATURES • • • • • • • 1 • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing


    Original
    sn74lvc1g32-epsces458a24-ma000-v+4a114-aa115-ac101sb marking PDF