SCES011E Search Results
SCES011E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) |
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sn74alvch1695216-bitsces011emil-std-883+1 | |
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Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) |
Original |
sn74alvch1695216-bitsces011emil-std-883+1 | |
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Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) |
Original |
sn74alvch1695216-bitsces011emil-std-883+1 | |
8C12
Abstract: EN10 MPDS006C SN74ALVCH16952
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Original |
mil-std-883300-mil16-bitsn74alvch16952+3 | |
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Contextual Info: SN74ALVCH16952 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per |
Original |
sn74alvch1695216-bitmil-std-883300-mil | |
74ALVCH16952DGGG4
Abstract: 8C12 EN10 SN74ALVCH16952
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Original |
mil-std-883300-mil16-bitsn74alvch16952+3 | |
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Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) |
Original |
sn74alvch1695216-bitsces011emil-std-883+1 | |
|
Contextual Info: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) |
Original |
sn74alvch1695216-bitsces011emil-std-883+1 | |
74ALVCH16952DGGRG4
Abstract: 8C12 EN10 SN74ALVCH16952
|
Original |
mil-std-883300-mil16-bitsn74alvch16952+3 |