SC70-5 G2 Search Results

marking G4 SOT23-6

Abstract: 118 5 Ld SOT-23 MDP0038 marking AF sc70-6 marking AF sc70-5 Marking G9 SOT23-5 MARK, g5 sot23 118 INTERSIL MAKING 3 Ld SC-70 g7 sot23-5 ISL28133FEZ-T7 ISL28233
Contextual Info: ISL28133, ISL28233, ISL28433 Data Sheet May 29, 2009 The ISL28133 is available in the 5 Ld SOT-23, the 5 Ld SC70 and the 6 Ld 1.6mmx1.6mm µTDFN packages. All devices operates over the extended temperature range of -40°C to +125°C. • Low Input Offset Voltage . . . . . . . . . . . . . . . . . . 8µV, Max.

AN816

Contextual Info: AN816 Vishay Siliconix Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION Both n-and p-channel devices are available in this package – the drawing example below illustrates the p-channel device.

Alloy 42

Abstract: SC70-6 TA816 SC-70 sc-70 package pcb layout
Contextual Info: TA816 Vishay Siliconix Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION Both n-and p-channel devices are available in this package – the drawing example below illustrates the p-channel device.

S101-05

Abstract: AN816 SI1912EDH-T1
Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

71079

Abstract: s101-05
Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS V N-Channel 20 P-Channel -8 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50

Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

AN816

Contextual Info: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

SQ1902EL

Contextual Info: SQ1902EL Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 20 RDS(on) () at VGS = 4.5 V

Contextual Info: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization:

marking WE SC70-6

Abstract: S101-05 marking G2
Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30 V D-S MOSFET # FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.63 0.700 at VGS = 4.5 V 0.52 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS V N-Channel P-Channel 20 -8 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)

Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a

Contextual Info: Si1988DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 1.6 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1967DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.3a 0.640 at VGS = - 2.5 V - 1.2 0.790 at VGS = - 1.8 V - 1.0 • Halogen-free According to IEC 61249-2-21 Definition

SI1902CDL

Abstract: 2306 mosfet
Contextual Info: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

431 T1 6-pin

Abstract: SQ1912
Contextual Info: SQ1912EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested

Contextual Info: Si1551DL Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) (Ω) ID (A) 1.9 at VGS = 4.5 V 0.30 20 3.7 at VGS = 2.7 V 0.22 - 20 4.2 at VGS = 2.5 V 0.21 0.995 at VGS = - 4.5 V - 0.44 1.600 at VGS = - 2.7 V

Contextual Info: Si1865DDL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VIN VDS2 (V) 1.8 to 12 RDS(on) () Max. ID (A) 0.200 at VIN = 4.5 V 1.1 0.300 at VIN = 2.5 V 0.9 0.508 at VIN = 1.8 V 0.7 DESCRIPTION The Si1865DDL includes a p- and n-channel MOSFET in

Contextual Info: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00

PART NUMBER MARKING SC70-6

Abstract: SI1865 VA MARKING SC-70 PACKAGE
Contextual Info: Si1865DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.215 at VIN = 4.5 V ± 1.2 0.300 at VIN = 2.5 V ± 1.0 0.440 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1865DL includes a p- and p-channel MOSFET in a

N-Channel mosfet sot-363

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)