SC105A Search Results

Contextual Info: DTA114T series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC -100mA R1 10kΩ VMT3 EMT3F -50V DTA114TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

Contextual Info: DTA013Z series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 1.0kΩ 10kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC115T series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 100kΩ VMT3 EMT3 50V DTC115TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: Doc No. TT4-EA-12576 Revision. 3 Product Standards MOS FET FK3303010L FK3303010L Silicon N-channel MOS FET Unit : mm For switching FK350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: DSKTJ07 Silicon N-channel Junction FET For impedance conversion in low frequency Unit: mm • Features  Low noise voltage NV  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: B  Packaging DSKTJ07x0L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)

Contextual Info: DTC044E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 47kΩ 47kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 47kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA114Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 10kΩ 47kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

Contextual Info: Doc No. TT4-EA-12653 Revision. 2 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching FJ350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching FJ350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: DTA044E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 47kΩ 47kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 47kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC024E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 22kΩ 22kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 22kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC144E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 47kΩ 47kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 47kΩ 2) Built-in bias resistors enable the configuration of

2SA1774

Contextual Info: 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors Outline Parameter Value VCEO IC 50V 150mA VMT3 EMT3F Collector Collector Base Base Emitter Emitter 2SA2029 SC-105AA Features

SC-105AA

Contextual Info: DRA3123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3123E DRA9123E in SSSMini3 type package Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

DSA9402

Contextual Info: DSA3402 Silicon PNP epitaxial planar type Unit: mm For low frequency amplification DSA9402 in SSSMini3 type package • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant

SC-105AA

Contextual Info: DRA3114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3114T DRA9114T in SSSMini3 type package Unit: mm • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat

Contextual Info: Doc No. TT4-EA-11681 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3143Y0L DRA3143Y0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC3143Y DRA9143Y in SSSMini3 type package 1.2 0.3 0.13 3 • Features

Contextual Info: Doc No. TT4-EA-11701 Revision. 2 Product Standards Transistors with Built-in Resistor DRC3143Y0L DRC3143Y0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA3143Y DRC9143Y in SSSMini3 type package 1.2 0.3 0.13 3 • Features

Contextual Info: Doc No. TT4-EA-11642 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3143Z0L DRA3143Z0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC3143Z DRA9143Z in SSSMini3 type package 1.2 0.3 0.13 3 • Features

Contextual Info: Doc No. TT4-EA-11760 Revision. 2 Product Standards Transistors with Built-in Resistor DRC3144G0L DRC3144G0L Silicon NPN epitaxial planar type Unit: mm For digital circuits DRC9144G in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low collector-emitter saturation voltage Vce sat

Contextual Info: Doc No. TT4-EA-11689 Revision. 2 Product Standards Transistors with Built-in Resistor DRC3114W0L DRC3114W0L Silicon NPN epitaxial planar type Unit: mm For digital circuits DRC9114W in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low collector-emitter saturation voltage Vce sat

Contextual Info: Doc No. TT4-EA-11669 Revision. 2 Product Standards Transistors with Built-in Resistor DRA3114Y0L DRA3114Y0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC3114Y DRA9114Y in SSSMini3 type package 1.2 0.3 0.13 3 • Features

Contextual Info: Doc No. TT4-EA-11700 Revision. 2 Product Standards Transistors with Built-in Resistor DRC3143X0L DRC3143X0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA3143X DRC9143X in SSSMini3 type package 1.2 0.3 0.13 3 • Features