SC105 Search Results

Contextual Info: Bulletin I0503J rev. B 07/00 SC105.5. Series SCHOTTKY DIE 105 x 125 mils a 0.35 ± 0.01 0.14 ± 0.0004 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION: (INCH). 3. DIMENSIONS AND TOLERANCES: a = 3.18 + 0, - 0.05

sc105

Abstract: sc105h045 S1025
Contextual Info: Bulletin I0503J rev. F 03/07 SC105.5. Series SCHOTTKY DIE 105 x 125 mils 40 157 Wafer flat alligned with side b of the die a 0.35 ± 0.01 (14 ± 0.4) c A d b C D Ø 125 (492) NOTES: Ø 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION: (MILS).

Contextual Info: Bulletin I0503J rev. F 03/07 SC105.5. Series SCHOTTKY DIE 105 x 125 mils 40 157 Wafer flat alligned with side b of the die a 0.35 ± 0.01 (14 ± 0.4) c A d b C D Ø 125 (492) NOTES: Ø 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION: (MILS).

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # SC105 Revision D Specifications: Sound level Category Mode of Operation Mounting Voltage Rating Frequency Loudness Min. Voltage Loudness (Max Voltage) Current Draw Current Draw Storage Temperature

Contextual Info: SC105B SMD POWER INDUCTORS XXX MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) SC105B Inductance byrcurrent BC105B I nduct ance decrdecrease

Contextual Info: SC105 SMD POWER INDUCTORS XXX MARKING ● Features 1. Open frame construction. ELECTRICAL CHARACTERISTICS 2 (1) SC105-100 SC105-120 SC105-150 SC105-180 SC105-220 SC105-270 SC105-330 SC105-390 SC105-470 SC105-560 SC105-680 SC105-820 SC105-101 SC105-121 SC105-151

Contextual Info: SC105 SMD POWER INDUCTORS XXX MARKING Features 1. Open frame construction. ELECTRICAL CHARACTERISTICS 2 (1) SC105-100 SC105-120 SC105-150 SC105-180 SC105-220 SC105-270 SC105-330 SC105-390 SC105-470 SC105-560 SC105-680 SC105-820 SC105-101 SC105-121 SC105-151

Contextual Info: SC105B SMD POWER INDUCTORS XXX MARKING Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SC105B-100 10 DC Resistance ( MAX) 2.52MHZ 60m Saturation Temperature (3) (4) Current

SC105

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # SC105 Revision B Specifications: Sound level Category Mode of Operation Mounting Voltage Rating Frequency Loudness Min. Voltage Loudness (Max Voltage) Current Draw Current Draw Storage Temperature

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # SC105R Revision A Specifications: Sound level Category Mode of Operation Mounting Voltage Rating Frequency Loudness Min. Voltage Loudness (Max Voltage) Current Draw Current Draw Storage Temperature

8TQ100

Abstract: SC105H100A5F
Contextual Info: Preliminary Data Sheet PD-20702 10/98 SC105H100A5F Schottky Die in Wafer Form 100 V 125Mils. x 105Mils. 5" Wafer 175°C Process Electrical Characteristics Wafer Form Parameter Description V FM Forward Voltage BV R Reverse Breakdown Voltage IRM Reverse Leakage Current

S1025

Abstract: SC105
Contextual Info: Bulletin I0503J 12/99 SC105.5. Series SCHOTTKY DIE 105 x 125 mils a 0.35 ± 0.01 0.14 ± 0.0004 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION: (INCH). 3. DIMENSIONS AND TOLERANCES: a = 3.18 + 0, - 0.05 (0.125 + 0, - 0.002)

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Passive C omponents > Product Feature Selector > Product Details SC10561KT Product Details

I0503J

Abstract: sc105h045 sc105 SC105H100x5x
Contextual Info: Bulletin I0503J rev. C 05/01 SC105.5. Series SCHOTTKY DIE 105 x 125 mils a 0.35 ± 0.01 14 ± 0.4 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION: (MILS). 3. DIMENSIONS AND TOLERANCES: a = 3.18 + 0, - 0.01 (125 + 0, - 0.4)

Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

Contextual Info: DTA013Z series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 1.0kΩ 10kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC115T series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 100kΩ VMT3 EMT3 50V DTC115TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: Doc No. TT4-EA-12576 Revision. 3 Product Standards MOS FET FK3303010L FK3303010L Silicon N-channel MOS FET Unit : mm For switching FK350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: DSKTJ07 Silicon N-channel Junction FET For impedance conversion in low frequency Unit: mm • Features  Low noise voltage NV  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: B  Packaging DSKTJ07x0L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)

Contextual Info: DTC044E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 47kΩ 47kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 47kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA114Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 10kΩ 47kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

Contextual Info: Doc No. TT4-EA-12653 Revision. 2 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching FJ350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching FJ350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: DTA044E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 47kΩ 47kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 47kΩ 2) Built-in bias resistors enable the configuration of