SC 3H7 Search Results

MD2369

Abstract: md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2369F MD2904 MQ2369
Contextual Info: NO T O R O L A SC -CXSTRS/R 6367254 FJ ^ MOTOROLA SC CXSTRS/R D E | b 3h7a S 4 96 D F ODfl aH4 D 82440 D T - Z 7-^-7 MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc

6224M

Abstract: nic1450
Contextual Info: M O T O R O L A SC - C L O G I O Tfl .6367252 MOTOROLA SC . LOGIC t.3h72Sa □ 0 7 ci m 7 98D 79647 D T-43-21 MOTOROLA MC14502B CMOS MSI S TR O B ED HEX IN V ER TER /B U FFE R (LOW-POWER COMPLEMENTARY MOSI The M C14502B is a strobed hex buffer/inverter with 3-state outputs, an

transistor SM 2174

Abstract: MPS-92 MPS929
Contextual Info: MOTOROLA SC «STRS/R 6367254 F> T T ~ ^ | f e 3 t 7 a s4 MOTOROLA SC OOai?tb 8 96D 8 1 7 6 6 XSTRS/R F T-2S-21 MPS929 MPS930A MAXIMUM RATINGS Symbol MPS929 MPS930A Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc V e BO 5.0

221A-04

Abstract: 600Y AN-222 MJE13070 MJE13071 81348
Contextual Info: MOTOROLA SC -CXSTRS/R F> "Tb D E ~ |t3t7aS4 □00134b fi 1 6367254 MOTOROLA SC CXSTRS/R F 96D MOTOROLA D T ~ 3 3 -/3 MJE13070 MJE13071 SEM ICONDUCTOR TECHNICAL DATA tv s »u m * 81346 5 AM PERE ) :i NPN SILICON POWER TRANSISTORS SW IT C H M O D E II S E R IE S

3N204

Abstract: 3N205 3N3204
Contextual Info: MOTOROLA SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R DË|t,3b72SM 96D F 82613 D0flSbl3 D M A X I M U M R A T IN G S Sym bol Value Drain-Source Voltage VD S 25 Vdc Drain-Gate Voltage Vdg 30 Vdc mA Rating Unit Drain Current Id 50 Reverse Gate Current Ig

3N209

Abstract: 3N204 3N205 75G60 ae5 uhf 3n210
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC D e | l.3L.72S4 D0flSbl3 □ 9 6D 8 2 6 1 3 C X ST R S/ R F D MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Qate Voltage Vdg 30 Vdc Drain Current Id 50 mA Reverse Gate Current

2N3905 MOTOROLA

Contextual Info: MOTORO LA SC ÍXSTRS/R FJ 6367254 MOTOROLA SC Tb »F|t,3h75SM GOflEDm E <X S T R S ¿ R „ F ? 96D M A X I M U M R A T IN G S Sym bol V a lu e U n it Colle ctor-E m itte r V oltag e B a tin g V C EO 40 Vdc Co lle ctor-B ase V oltag e v CBO 40 Vdc Em itter-B ase V olta g e

LF357

Abstract: LF355 356B lf355 motorola lf356 355b LF355B LF367 LF 355 LF356 equivalent
Contextual Info: MO T O R O L A SC -[TELECOM 6 3 6 7 2 5 3 MOT OROLA SC M 01 » | b3b7ES3 T E LECOM □ b 0 IE 80495 MONOLITHIC JFET OPERATIONAL AMPLIFIERS SILICON MONOLITHIC INTEGRATED CIRCUITS M O N O L IT H IC JFE T INPUT O P E R A TIO N A L A M P L IFIE R S These internally compensated operational amplifiers incorporate

CASE-751

Abstract: 5218 8 PIN Case751B
Contextual Info: MOTOROLA SC { L O G I C * OS D b3L.72SS OOflOEflS ñ MOTOROLA T - SEMICONDUCTOR TECHNICAL DATA MC54/74HC195 4-B it Universal S hift Register High-Performance Silicon-Gate CMOS J SUFFIX CERAMIC C A S E 620*09 The MC54/74HC195 is identical in pinout to the LS195. The device inputs are

IN5539

Abstract: 1N5535A 1N5518A 1N5519A 1N552 1N5521A 1N5522A 1N5523A 1N5524A 1N5546A
Contextual Info: MOTOROLA SC O I O D E S / O P T O } 12 E D I b 3 b ? 2 S S □ □ 7 cîâLi3 T g - - T-lhOf MOTOROLA 1N5518A, B TECHNICAL DATA 1N5546A, B SEM ICONDUCTOR thru LOW VOLTAGE AVALANCHE ZENER DIODES LOW VOLTAGE AVALANCHE SILICON O XIDE PASSIVATED ZENER REGULATOR DIODES

72-SA

Abstract: ls374 motorola 74HCT374
Contextual Info: MOTOROLA m u i u n SC { L O G I C } u L H SEM ICONDUCTOR OS b3t.72Sa □ □ Û G 4 4 5 4 _ 'T'Mi n-Ol -fiC 11 TECHNICAL DATA MC54/74HCT374 O ctal 3-S tate Noninverting D Flip-Flop w ith LSTTLC om patible Inputs J SUFFIX CERAMIC CASE 732-03

74HC4060T

Contextual Info: MOTOROLA SC - C L O G I O G2 D | t, Bb7 aSE QGflGbEfl MOTOROLA 7 T-*4S 'Z 2~ n SEMICONDUCTOR TECHNICAL DATA MC54/74HC4060 1 4-S tage Binary Ripple Counter w ith Oscillator J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CMOS . The MC54/74HC4060 is identical in pinout to the standard CMOS MC14060B. The

SANYO marking kf

Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Contextual Info: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

Contextual Info: MC14174B M O T O R O L A H E X TYPE D FLIP-FLOP L SUFFIX C ER AM IC C A S E 620 The MC14174B hex type 0 flip-flop is constructed with MOS Pchannel and N-channel enhancement mode devices in a single mono­ lithic structure. Data on the D inputs which meets the setup time

LP1 K06

Abstract: AC03 nec marking ag01 TWN AA 427 epd driver ic epd source driver ic IC Marking M03 6 PIN
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

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Contextual Info: t 11 2 0 1 0 6 6 2 REVISIONRECORD DATE STM. 2 8 5 £ 7 8 — P A R T NO, W A S E X - 6 G f 7 8 AND R E L E A S E D 12 D E 18 B R E V I S E D IZ.JN 7 3 C R E V / S E D 06MY8O D R IB a d d e d ; t e r m i n a l CA ViTY R E V I S E D 2H5E81 ET PULL-O UT GROOVES ADDETD 5

HCPL316

Contextual Info: Thal HEW LETT mifiM PACKARD 2.0 Amp IGBT Gate Drive Optocoupler w ith Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated

PM554

Abstract: LT1066 3004 IC 74HC273 scr c20d PM5101 pc motherboard schematics 432F
Contextual Info: STANDARD PRODUCT PM I PMC-Sierra, Inc. I T# I V h ISSUE 2 PM5543 SARD SONET/SDH 155Mbit/s ADM Reference Desist PM5543 A D M 155 REF SONET/SDH 155 Mbit/s ADD /DRO P MU LT IP LE X OR WITH SINGLE MODE OPTICAL INTERFACE R E F E R E N C E DESIGN SARD I s s ue 2: Jul y, 1 996

Contextual Info: @ LG Semlcon. Co., LTD. Description Features The GMM7362000CS/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board with decoupling capacitors. The

LUC3X01

Abstract: sv 3747 isolation transformer TX15 Ternary CAM
Contextual Info: Preliminary Data Sheet August 1996 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations o Description • VLSI CMOS Physical Layer Device supports the IEEE' 802.3u, 100Base-T4 CSMA/CD specifica­ tion. The LUC3X01 device implements the physical layer

Contextual Info: NN511000 series Fast Page Mode CMOS 1Mx 1bit Dynamic RAM NPN a DESCRIPTION The NN511000 series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 1 bit. The NN511000 series is fabricated with advanced CMOS technology and designed with innovative design tech­

AM29818

Abstract: CY29FCT818CTPC CY29FCT818T
Contextual Info: CY29FCT818T TT C Y P R E S S Diagnostic Scan Register Features F unctional Description • Function, pinout and drive compatible with FCT, F Logic and AM29818 • FCT-C speed at 6.0 ns max. Com’l FCT-B speed at 7.5 ns max. (Com’l) • Reduced Voh (typically = 3.3V)

qml-38535

Abstract: 4020B 4024B 4040B
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET 15 REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AG ENCIES OF THE DEPARTM ENT OF DEFENSE 8 PREPARED BY Marcia B Kelleher