SBM22 Search Results

varactor diode capacitance measurement

Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Contextual Info: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY

MA4E917

Abstract: 00G132 MA4E913
Contextual Info: M/A-COn SEMICOND-.BRLNGTON 11 D • SbM2214 D0D1322 T H m e Ajfocam T - 07 -o y Ceramic Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ CAN BE SCREENED TO JANTXV LEVELS ■ UNIFORM RF CHARACTERISTICS Applications

sbm23

Abstract: SBM22 SBM24PT
Contextual Info: SBM22PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 60 Volts CURRENT 2.0 Amperes SBM26PT FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications

SBM22GP

Abstract: SBM23GP SBM24GP SBM25GP SBM26GP
Contextual Info: SBM22GP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 60 Volts CURRENT 2.0 Amperes SBM26GP FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications

10J capacitor

Abstract: capacitor 50uf transistor M 839 305 MOSFET transistor capacitor 280v DU28120U Amp. mosfet 800 watt RIA 39 transistor 22 pf trimmer capacitor 839 transistor
Contextual Info: A flk Ù D M M a n A M P com pany RF MOSFET Power Transistor, 120W, 28V 2 - 1 7 5 MHz DU28120U Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated O utput Power Lower Noise Figure Than Com petitive Devices

MA40092

Contextual Info: M/ A- CO N S E M I C O N D n B R L N G T O N 11 ]> • 5b42S14 GOGIETE S ■ M I C Stripline Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER

s10p40

Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge

s10p40

Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK

Contextual Info: 5642214 N/A-CON m/a-com semiconductor SEMICONDUCTOR 930 T3 00638 PE|St4ESm T '3 < 7 . o DDDDtaa s ' 0 V~ MA4F200 Series ûallium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

diode BY 226

Abstract: DIODE RING QUAD
Contextual Info: n/ A- CO M S E U I C O N D i B R L N G T O N 11 D • 5fc>45214 0 0 Q 1 3 1 0 3 ■ M I C 7^ 07-0 Schottky Barrier Beam-Lead and Packaged Ring Quads For Double Balanced Mixers up to 18 GHz Features ■ SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY