SBE 461 Search Results

SPRAGUE 725M

Abstract: SBE 715p CARBON COMP RESISTOR SPRAGUE 716p capacitor polyester ORANGE Sprague Orange Drop 779p 716P 192P sprague 763M 770P
Contextual Info: SB E SBE, Inc. 131 South Main Street Barre, Vermont 05641-4854 USA L CTR E O N T 802-476-4146 F 802-476-4149 web site: www.SBElectronics.com e-mail: Info@SBElectronics.com IC S SBE Orange Drop , Radial Lead P O LY P R O P Y L E N E — Performance. F R O M

BYX46

Abstract: 7Z10045 diode 10di T50 thyristor BYX46-600 BYX46-200 BYX46-200R BYX46-600R D696
Contextual Info: BYX46 SERIES PHILIPS SbE D INTERNATIONAL • 7110a2b 0041b3D S32 ■ P H I N _ FAST SOFT-RECOVERY RECTIFIER DIODES - r t ^ * • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. They are primarily

BDS945

Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Contextual Info: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors

S4KW12KA-3

Abstract: S4KW16KA-4 S4KW20KA-5 S4KW24KA-6 DS179 ha 1758
Contextual Info: SBE D SEMTECH CORP û ia T ia T KUJ-lPfn 000 27Ô3 S4KW4KA-1 STD. RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER 112 S4K8WKA-2 S4KW12KA-3 S4KW16KA-4 S4KW20KA-5 S4KW24KA-6 HIGH VOLTAGE, HIGH CURRENT, HIGH DENSITY, STANDARD RECOVERY RECTIFIER ASSEMBLY QUICK REFERENCE

BSS38

Abstract: IEC134
Contextual Info: BSS38 PH IL I P S INTERNATIONAL SbE » 7 1 1 0 Ô 2 L 00 42330 T7fl • PHIN — SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes.

Contextual Info: PHILIPS INTERNATIONAL SbE D • 711DflSb DDMbSTti DTO ■ P H I N Philips Components RZ3135B42W Data sheet status date ofIssue Preliminary specification June 1992 NPN silicon planar epitaxial microwave power transistor D E S C R IP T IO N A P P L IC A T IO N

PLD intel

Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program

intel 28F020

Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020
Contextual Info: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program

RZ3135B42W

Contextual Info: PH ILIPS INTERNATIONAL SbE D Bi 7 1 1 Dfl2 b □ □ 4 b S clLi DTD • P H I N Philips Components Data sheet status date of Issue R Z 3135B 42W Preliminary specification June 1992 NPN silicon planar epitaxial microwave power transistor D E S C R IP T IO N

Hp 4619

Abstract: Serial NAND A1225 A1240 A1280 CQFP 256 PIN actel 81H13 actel a1240 A1280-1 2a1280
Contextual Info: SBE AC TEL CORP D • OnEHTb DGDDMGS Mb3 ■ ACT ACT 2 Field Programmable Gate Arrays Features • Up to 8000 Gate Array Gates 20,000 PLD /LC A ™ equivalent gates • Replaces up to 210 T T L Packages • Replaces up to 69 20-Pin PA L Packages • Design Library with over 250 Macros

83c575

Abstract: cmps a13 TOP3 package 80C51 80C575 87C575 P80C575EBPN P87C575EBPN enc28 gpcvim
Contextual Info: PHILIPS INTERNATIONAL SbE D • 7 H D f i2 b DQ3TD34 D12 p r e l im in a r y a p e v u r v i Philip» Sem iconductors M icrocontroller Products 80C575/83C575/87C575 CMOS single-chip 8-bit microcontroller T -4 9 -1 9 -0 8 PIN CONFIGURATIONS DESCRIPTION FEATURES

m2131

Abstract: BYV92 100 BYV92 BYV92-300 BYV92-500U T0319 M2132 350AT m2136
Contextual Info: BYV92 SERIES M A IN T E N A N C E T Y P E LIPS INTERNATIONAL SbE D • J V 711Dâ2b □□414bb S2b ■ P H I N T - O Z - l l ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low

minimelf marking

Abstract: p 4614 4626 1085P
Contextual Info: SbE D • 7^2^537 0041bl3 1TD «SfiTH r r z SGS-THOMSON ^ 7 # S T-H-Û7 M t œ n m g i r a œ s TMM 4614 -» TMM 4627 G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 1.8V TO 6.2V D E S C R IP T IO N Low leakage, low impedance, low noise Zener diodes A B S O L U T E R A T IN G S limiting values

I28F400

Abstract: 80L188EB 82360SL intel PLD D773
Contextual Info: A D V A N C E IN F O R M A T IO N in te i INTEL CORP MEMORY/PLD/ SbE » • 4fl2bl7b Da773Sa TßH ■ I T L E 28F400BX-TL/BL, 28F004BX-TL/BL - T qt (3> 2 6 4MBIT (256K x16, 512K x8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY I Low Voltage Operation for Very Low

Contextual Info: SbE T> m ISGTH 7^2*123? 004D1QQ 04G T - ^ 6 -0 7 - I / M54HC273 M74HC273 SCS-THOMSON 0 © [l[L i© ir K S R il0 © S G S-THOMSON OCTAL D-TYPE FLIP FLOP WITH CLEAR • HIGH SPEED fMAX = 48 MH z (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION ICC = 4 M (MAX.) at TA = 25°C

D0414

Abstract: alps 503 a m2131 BYV92 100 BYV92 BYV92-300 BYV92-500U S 0319
Contextual Info: BYV92 SERIES M A IN TEN A N C E TYPE ?HILIPS INT ERN ATI ONA L SbE D • 711DÔ2L ODMlMbb ULTRA FAST RECOVERY RECTIFIER DIODES ■ RHIN T - O Z - l l Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery

1n4627

Contextual Info: SbE D • 7^2=5837 0D4153fl bTT ■ SGTH S C S -T H O M S O N [* [R » iO T œ s S G 1N 4 6 1 4 -1 N 4627 1N 4099 ~»1N 4118 T~th07 S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 1.8V TO 27V DESCRIPTION Designed for 250mW applications requiring low leak­ age low noise. Zener impedance and Zener voltage

MIDWEC capacitor

Abstract: 298P Metallized Polyester Film Capacitor 192P 461M104910 polystyrene capacitors industrial midwec variable resistor 727M 461M60491 METALLIZED POLYESTER FILM CAPACITORS
Contextual Info: Type 461M Type 461M Metallized Polyester Film Capacitors Metallized Polyester Film Capacitors Type 461M Axial Lead Pressed/Oval Profile Metallized Polyester Film Capacitors Specifications Insulation Resistance: At +25°C: 10,000 MΩ for C ≤ 1.0 µF 10,000 MΩ-µF for C > 1.0 µF

MIDWEC capacitor

Abstract: sbe760m WE 251 sbe 192P 763M industrial midwec 4854 106J 192P 192P sprague
Contextual Info: Type 760M Metallized Polypropylene Film Capacitors Type 760M Axial Lead Round Profile Metallized Polypropylene Film Capacitors Specifications Insulation Resistance measured at 100 VDC : At +25°C: 400,000 MΩ for C ≤ 0.5 µF 200,000 MΩ-µF for C > 0.5 µF

MIDWEC capacitor

Abstract: industrial midwec 106k 250v 192P 460M55692 779P midwec variable resistor 727M
Contextual Info: Type 460M Metallized Polyester Film Capacitors Type 460M Axial Lead Round Profile Metallized Polyester Film Capacitors Specifications Capacitance Range: 0.0047 to 100.0 F Capacitance Tolerance: ±5% and ±10%, standard other tolerances available Insulation Resistance:

MIDWEC capacitor

Abstract: MIDWEC 4 331 1 6 Midwec 3 476 capacitor 106J 192P 192P sprague Film Capacitors Introduction industrial midwec Metallized Polyester Film Capacitor AC
Contextual Info: Type 761M Metallized Polypropylene Film Capacitors Type 761M Axial Lead Pressed/Oval Profile Metallized Polypropylene Film Capacitors Specifications Insulation Resistance measured at 100 VDC : At +25°C: 400,000 MΩ for C ≤ 0.5 µF 200,000 MΩ-µF for C > 0.5 µF

8n20

Abstract: 8N18 rfm8n
Contextual Info: H A J R R RFM 8N18/8N20 RFP8N18/8N20 I S HARRIS SEMICOND SECTOR 5fc>E J> m 43G2E71 0Q41b7fl TTÔ IHAS August 1991 N-Channel Enhancement Mode Power Field Effect Transistors 7 ^ 3 4 */ Packages Features T0-204AA • 8A, 180V and 200V • rDS(on = o .s n • S O A is Pow er-D issipation Limited

E180N

Abstract: E060CK E180N SBE HS19F500B HS5F7.5AS HS20F500B HS5F5AS Sola/transformer 3000 kVA C1047 E180CK
Contextual Info: Sola/Hevi-Duty General Purpose and Buck Boost Transformers General Purpose Electrical Transformers c Free Shielding c Fast, Easy Installation Single Phase, 10 KVA Ñ 240 ´ 480 Volt Primary, 120/240 Secondary, 60 Hz c UL-3R Enclosures c Highly Versatile Hevi-Duty General Purpose Transformers are the industryÕs workhorses.

MB87Q3140

Abstract: MB87Q3141 MB87Q3141RB-GE1 xbee TRC1000 program eeprom 24c32
Contextual Info: Fujitsu Microelectronics America, Inc. 1601 Trapelo Road Suite 273 Waltham, Ma 02451 July 19, 2006 Thuan Nguyen Qualcomm Incorporated 5775 Morehouse Drive San Diego, CA 92121-1714 Dear Thuan: The following information is intended to alleviate some confusion that has resulted regarding