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    SBA30 Search Results

    SBA30 Datasheets (17)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HSBA3048
    		Huashuo Semiconductor N-channel 30V fast switching MOSFET with 100A continuous drain current, 1.3mΩ typical RDS(ON), low gate charge, and high current capability in a PRPAK5x6 package. Original PDF
    badge HSBA3094
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 1.8 mΩ RDS(ON), 85A continuous drain current, low gate charge, high current capability, and advanced trench technology for power management and DC/DC converters. Original PDF
    badge HSBA3016
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 4 mΩ RDS(ON) at VGS = 10V, 108A continuous drain current, advanced trench technology, low gate charge, and 69W power dissipation capability in PRPAK5*6 package. Original PDF
    badge HSBA3018B
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 2 mΩ RDS(ON), 85A continuous drain current, super low gate charge, and 100% EAS tested, suitable for synchronous buck converters. Original PDF
    badge HSBA3050
    		Huashuo Semiconductor N-channel 30V fast switching MOSFET with 75A continuous drain current, 3mΩ typical RDS(ON), low gate charge, and 50W power dissipation in a PRPAK 5x6 package. Original PDF
    badge HSBA3006
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 81A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 100% EAS tested for reliable power conversion applications. Original PDF
    badge HSBA3014
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 150 A continuous drain current, 12 mΩ RDS(ON), high cell density trench technology, suitable for synchronous buck converters, available in PRPAK 5x6 package. Original PDF
    badge HSBA3060
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 48A continuous drain current, 8mΩ typical RDS(ON), 31W power dissipation, and 65°C/W thermal resistance junction to ambient in PRPAK 5x6 package. Original PDF
    badge HSBA3054
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 50 A continuous drain current, 4.5 mΩ typical RDS(ON), low gate charge, and high cell density Trench technology for power management in desktop computers and DC/DC converters. Original PDF
    badge HSBA3052
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 52A continuous drain current, 5 mΩ typical RDS(ON), low gate charge, and 24W power dissipation in a PRPAK 5x6 package. Original PDF
    badge HSBA3086
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 0.7 mΩ RDS(ON), 230 A continuous drain current, 89 W power dissipation, and 65 nC gate charge, suitable for power management and DC/DC converters. Original PDF
    badge HSBA3058
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 6 mΩ RDS(ON), 30 A continuous drain current, 31 W power dissipation, and low gate charge, suitable for power management and DC/DC converters. Original PDF
    badge HSBA3062
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 40A continuous drain current, 10.5mΩ RDS(ON), low gate charge, and 31W power dissipation, suitable for power management and DC/DC converters. Original PDF
    badge HSBA3004
    		Huashuo Semiconductor N-channel 30V fast switching MOSFET with 58A continuous drain current, 8.5mΩ RDS(ON) max, featuring high cell density trench technology, low gate charge, and 100% EAS tested for reliability in power management applications. Original PDF
    badge HSBA3031
    		Huashuo Semiconductor P-Ch 30V MOSFET with -70A continuous drain current, 7.2mΩ RDS(ON), high cell density trench technology, suitable for synchronous buck converters, available in PRPAK5x6 package. Original PDF
    badge HSBA30P15
    		Huashuo Semiconductor P-Ch 150V Fast Switching MOSFET with -30A continuous drain current, 56mΩ typical RDS(ON), advanced trench technology, low gate charge, and 100% EAS guaranteed, suitable for high-density power applications. Original PDF
    badge HSBA3056
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 73A continuous drain current, 3.2mΩ typical RDS(ON), low gate charge, and high cell density Trench technology for power management and DC/DC converter applications. Original PDF
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    Schneider Electric SBA30D15MS

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    Schneider Electric SBA30D13MS

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    ITT Interconnect Solutions MDM-9PSB-A30

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    Avnet Americas MDM-9PSB-A30 Bulk 38 Weeks 10
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    Mouser Electronics MDM-9PSB-A30
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    Newark MDM-9PSB-A30 Bulk 10
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    Master Electronics MDM-9PSB-A30
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    Vyrian MDM-9PSB-A30 5,251
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    ITT Interconnect Solutions MDM-9SSB-A30

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    Newark MDM-9SSB-A30 Bulk 10
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    ITT Interconnect Solutions MDM-21PSB-A30

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    Avnet Americas MDM-21PSB-A30 Bulk 38 Weeks 10
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    Mouser Electronics MDM-21PSB-A30
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    Newark MDM-21PSB-A30 Bulk 10
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    Master Electronics MDM-21PSB-A30
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    SBA30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN101EF31G

    Abstract: MN101E31 IV-70 MN101E MN101E PANASONIC MN101EF29G LC12 lc08b 82279 IV-65
    Contextual Info: Cover MICROCOMPUTER MN101E MN101E31G/31D/F31G LSI User’s Manual Pub.No.21631-012E Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the


    Original     		MN101E MN101E31G/31D/F31G 21631-012E MN101EF31G MN101E31 IV-70 MN101E MN101E PANASONIC MN101EF29G LC12 lc08b 82279 IV-65 PDF