SB61 Search Results

R1003

Abstract: R1002 fptn R1003 diode 1SBN 05 0100 R1002 1sbn contactor coils r1004 R0003 1SBN 05 0200
Contextual Info: Surge Suppressors for Contactor Coils Ordering Details SB7610C3 For contactors BC 9 . BC 30, and KC TBC 9 . TBC 30 KC and TKC RT 7/. SB6186C3 BC 9 . BC 30 and KC BC 9 . BC 30 and KC 1 RV-BC 6/… SB7400C1 AE 9 . AE 110, TAE 45 . TAE 110 RV 5/50

Contextual Info: SB620FCT – SB6100FCT WTE POWER SEMICONDUCTORS Pb 6.0A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

sb61l256bs

Abstract: SB61L256BS-XG
Contextual Info: SB61L256BS-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BS-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BT-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BT-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BD Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BD series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024BT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

SB61H1024AS-12

Abstract: SB61H1024AS SB61H1024AS-10 SB61H1024AS12 sb61h1024 SB61H1024A SB61
Contextual Info: SB61H1024AS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BT-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BT-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BD-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BD-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024BT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BT-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BT-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

SB61H1024AS-10

Abstract: SB61H1024AS-15 SB61H1024AS
Contextual Info: SB61H1024AS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Silicon-Based Technology

Contextual Info: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable

Contextual Info: SB61L256AD Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256AD series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BD Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BD series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB620FCT – SB6100FCT WTE POWER SEMICONDUCTORS Pb 6.0A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package TO-220 Package Weight mg 1900 Product Group Type No. SB620CT – SB6100CT SB820CT – SB8200CT SB1020CT – SB10200CT SB1620CT – SB16200CT SB2020CT – SB20200CT SB2520CT – SB25200CT

Contextual Info: SB620CT – SB6100CT 6.0A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: SB61L256A-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256A-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

SB61L256BT-7

Abstract: SB61L256BT-8
Contextual Info: SB61L256BT Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BT series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024AT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61H1024BT Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256BD-XG Silicon-Based Technology 32,768 x 8-Bits Ultra High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256BD-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

Contextual Info: SB61L256AD-XG Silicon-Based Technology 32,768 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61L256AD-XG series products are 32,768-words by 8-bits static RAMs fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and