SATURATION INSTRUCTIONS Search Results

Contextual Info: KSE210 PNP EPITAXIAL SILICON TRANSISTOR COL LECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz lc= -100mA TO -126 Complement to KSE200 ABSOLUTE MAXIMUM RATINGS Rating Unit

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

ZXT12P40DX

Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
Contextual Info: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: FSB660/FSB660A July 1998 FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol

DFN3020

Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A

FPN660A

Abstract: CBVK741B019 F63TNR FPN660 PN2222N pnp Saturation transistor to-226
Contextual Info: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol

CBVK741B019

Abstract: F63TNR FPN430 FPN430A PN2222N
Contextual Info: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol

FPN630

Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
Contextual Info: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol

Contextual Info: FSB749 PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. Sourced from process PC. E B SuperSOTTM-3 Ordering Information Part Number Top Mark

Contextual Info: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY 20V LOW SATURATION TRANSISTORS Features Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A • RSAT = 47mΩ for a low equivalent On-Resistance

ZTX749A

Contextual Info: ZTX749A ZTX749A PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO Parameter

Contextual Info: NZT660 / NZT660A PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number

c 1246

Abstract: fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246
Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units

Contextual Info: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method

SSOT-3

Abstract: F63TNR 3.2 CBVK741B019 F63TNR FSB749 MMSZ5221B
Contextual Info: FSB749 FSB749 C E B SuperSOTTM-3 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SSOT-3

Abstract: CBVK741B019 F63TNR FSB560 FSB560A MMSZ5221B SuperSOTTM -3
Contextual Info: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SSOT-3

Abstract: CBVK741B019 F63TNR FSB660 FSB660A MMSZ5221B
Contextual Info: FSB660/FSB660A FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector

FMMT449

Contextual Info: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SSOT-3

Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
Contextual Info: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: FSB660/FSB660A FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

IC 630

Abstract: marking DA1
Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance

ssot-6

Abstract: SSOT6 100C CBVK741B019 F63TNR FDC633N FMBS549
Contextual Info: FMBS549 FMBS549 NC C E Package: SuperSOT-6 single Mark : .S1 B C C Pin 1 PNP Low Saturation Transistor ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. Absolute Maximum Ratings*

pnp Saturation transistor to-226

Abstract: FPN660 FPN660A
Contextual Info: FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. • Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted