SATELLITE RADIO HOLDINGS Search Results

EWCAP

Abstract: PIN HEADER right angle FOOTPRINT USCAR DELPHI 10 pin Connectors 40 pin female header DELPHI Connectors square pin headers CONNECTOR HEADER 20 PIN MAIL Satellite Radio Holdings HEADER 2x8 16 pin
Contextual Info: Connectivity and Integration D e l p h i 0 6 4 S e r i e s H e a d e r U n s e a l e d C o n n e c t o r s Description – Delphi's standard 064 series unsealed header connectors are USCAR † compliant. These products: meet USCAR design guidelines per SAE/USCAR-12 Revision 2, December 2001

Contextual Info: September 24, 2014 MACOM Announces Industry's Leading Up-Converter for 28 - 34 GHz Point-to-Point Radio Applications Up Converter boasts industry's best LO Suppression and high linearity in a 4mm PQFN package LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Holdings Inc. ("MACOM"), a leading supplier of high

BFP740

Abstract: sdars lna BFP640 BFP740FESD MIPI omnivision BFP740 application note sdars xm sirius x-goldtm sdars C166TM
Contextual Info: BFP740FESD/BFP640FESD 2 Stage LNA for 2.330GHz SDARS Combined 2 Stage LNA for SDARS using Infineon's BFP740FESD and BFP640FESD Series A pplication Note AN222 Revision: 1.0 2010-07-02 RF and Protection Devices Edition 2010-07-02 Published by Infineon Technologies AG

Contextual Info: BGB707L7ESD Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.3, 2012-11-09 RF & Protection Devices Edition 2012-11-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Bluetooth Jammer

Abstract: BAND13 LTE Receiver BGA231L7 gps transmitter block diagram 827mhz murata LTE saw filter
Contextual Info: B GA 23 1L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Applic atio n N ote A N 273 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es Edition 2011-09-16 Published by

Contextual Info: B GA 231L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Us ing Seri es No tc hes Applic atio n N ote A N 276 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es

Contextual Info: BGB717L7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 3.4, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: Electronic Component Distributor. Source:Infineon Technologies P.N:BGA524N6E6327XTSA1 Desc:IC AMP SI-MMIC Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

BGA725L6

Abstract: gps trimble glonass gps TSLP-6 lna 2.5 GHZ s parameter ads design
Contextual Info: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG

Contextual Info: BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2014-01-24 RF & Protection Devices Edition 2014-01-24 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG

LNA marking CODE R0

Contextual Info: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

Contextual Info: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG

Contextual Info: BGA924N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2014-01-24 RF & Protection Devices Edition 2014-01-24 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG

Contextual Info: BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2013-06-24 RF & Protection Devices Edition 2013-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

LTE Receiver

Abstract: AN253 maxim microwave transmitter 10GHz 07104
Contextual Info: B GA 915 N 7 Highl y Lin ear and L ow Nois e A mplif er for Gl obal Na vi gati o n S atelli te S ys te m s G PS/ G L O NA S S/ Gal ileo/ C O M PA S S fr o m 1550 MHz to 1 615 M Hz Appli c ations Applic atio n N ote A N 251 Revision: Rev. 1.3 2011-09-13 RF and P r otecti on D evic es

Contextual Info: BGB719N7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 1.1, 2012-10-30 RF & Protection Devices Edition 2012-10-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BGM1143N9 Front-End Module for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.0, 2013-08-13 Preliminary RF & Protection Devices Edition 2013-08-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

Contextual Info: BGA825L6S Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.1, 2012-10-17 RF & Protection Devices Edition 2012-10-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

XPOSYS

Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

AN177

Abstract: AN181 BGB707L7ESD C166 Germanium Transistor
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP760 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.0, 2012-12-04 RF & Protection Devices Edition 2012-12-04 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Germanium Transistor

Abstract: 2.4GHz Power Amplifier transistor
Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer