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Samwin sw830 Abstract: SW830 Samwin CHMC 37 Contextual Info: SAMWIN SW830 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,	Original	SW830 Samwin sw830 SW830 Samwin CHMC 37	PDF

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Samwin sw830

Abstract: SW830 Samwin CHMC 37
Contextual Info: SAMWIN SW830 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,

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SW830 Samwin sw830 SW830 Samwin CHMC 37

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