SAMSUNG NAND DERATING Search Results

K524G2GACB-A050

Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
Contextual Info: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

KBY00

Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
Contextual Info: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: SAMSUNG SEMICONDUCTOR KS54HCTLS KS74HCTLS INC □2 DE| 7U4145 00Qb3D7 I | on 8-1np ut Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of C M O S • High-Drive-Current outputs:

HCTLS

Contextual Info: SAMSUNG SE MIC ONDU CT OR INC os de| 7Tb4ma KS54HCTLS H O O KS74HCTLS • DDGtasi 0 63 51 D Quad Schmitt-Trigger NAND Gates Preliminary Specifications FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with These Schmitt-trigger d evices contain four Independent

Contextual Info: SAMSUNG SEMICONDUCTOR INC D5 KS54AHCT KS74AHCT 12 de| ? ^ bm4s o o o s ,i3t, s | t -1 Triple 3-lnpul NAND Gates with Opert-Drain Outputs FEATURES DESCRIPTION • Function, pln-out, speedand drive compatibility with 54I74ALS logic family • Low power consumption characteristic of CMOS

153-FBGA

Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
Contextual Info: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

1411D

Abstract: 74142 logic diagram AHCT20
Contextual Info: SAMSUNG SEMICONDUCTOR IN C 02 KS54AHCT 2 ^ KS74AHCT D e | TlbM lM S OGG5 T 41 T J~_ D . - ^ *7 ^ 3 -* f Dual 4-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54f74ALS logic family • Low power consumption characteristic of CMOS

KS74 SOP

Abstract: KS74
Contextual Info: SAMSUNG SEMICONDUCTOR INC 05 KS54HCTLS f i f i KS74HCTLS u u , D E l ? cit . m 4 E O00b274 1 I T T Quad 2-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54S74LS logic family • Low power consumption characteristic of CMOS

KS74

Contextual Info: SAMSUNG SEMICONDUCTOR INC 02 K S 7 4H C T l1 1 0 DÊJjj 7 citi14 l 4 5 OODba^Q □ Triple 3-Input NAND Gates : — FEATURES DESCRIPTION. • Function, pin-out, speed and drive compatibility with 54174LS logic family • Low power consumption characteristic of CMOS

taig

Contextual Info: SAMSUNG SE MIC O N D U C T OR INC OB 5T| 7^4142 KS54HCTLS O Q KS74HCTLS “ 00Qb303 4 Dual 4-Input NAND Gates with Open-Drain Outputs -f - 4 3 - I -1 FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family

Contextual Info: SAMSUNG SEMICONDUCTOR INC OE KS74HCTLS ^ 3 D E I 71fc.4142 D 0 D L 3 S 4 0 J~. 13-Input NAND^Gates FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with S4/74LS logic family • Low power consumption characteristic of CMOS • High-Drive-Current outputs:

S74AHCT

Contextual Info: SAMSUNG SEMICONDUCTOR INC DE DË| ~ KS54AHCT f i f i KS74AHCT u u GOOSTIL Q -7 ^ 3 -2 / Quad 2-lnput NAND Gates FEA TU R E S DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CM OS

Contextual Info: SAMSUNG SEMICO NDUCT OR INC 02 KS54AHCT o n KS74AHCT_ DE| 7 ^ 1 4 2 0005^4=] 3 J } f 4 v lì 8-Input Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS

MCP 256M nand samsung mobile DDR

Abstract: MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp
Contextual Info: Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb 256M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: SAMSUNG SE MI CO ND UCTOR INC OS DEI 7^4142 KS54AHCT O O KS74AHCT “ □□□ST4S t. | -pH*-*! Dual 4-lriput NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS

Contextual Info: SAMSUNG SEMICONDUCTOR INC 0 2 D E J p P T t m M E KS74AHCT * 3 3 Q GO ST Tf TT 13-Input NAND Gates FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic ol CMOS • High-Drive-Current outputs:

Contextual Info: SAMSUNG S E M I C ONDU CT OR INC OB D E * 7=1^4145 OOQbETM 7 Triple 3-Input NAND Gates with Open-Drain Outputs •-<43-SL\ KS54HCTLS H O KS74HCTLS FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS

Contextual Info: SAMSUNG S E M I CON DU CT OR INC OE KS54HCTLS f ì i KS74HCTLS v 1 F e | T U M l M a 000 bE7L s | ~T-*f3-aj • Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with S4/74LS logic family

Contextual Info: SAMSUNG S E M I CO ND UCTOR INC 03 DE | 7 ^ 4 1 4 2 D00L5fl0 7 | Quad 2-Input NAND Gates with Open-Drain Outputs KS54HCTLS M KS74HCTLS w T " H 3 -V I FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS

Contextual Info: DE,I 7 % H 1 4 E S A M S U N G S E M I C O N D U C T O R INC 02 □ □ O S cn B L> | 3 D • ' ;^ • • r '7^S7- 2 / Quad Schmitt-Trigger NAND Gates KS54ÀHCT Ï O Ö KS74AHCT Preliminary Specifications FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with

Contextual Info: SA MSUNG SE MI C O N D U C T OR INC OE KS54AHCT -f/J KS74AHCT l u d I | 7 ^ 4 1 4 5 0005^32 ñ | Triplé 3-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed end drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS

samsung "nand flash" derating

Abstract: XTAL1 4m MG30
Contextual Info: Information Manual March 1998 Lucent Technologies MG30 NAND FlashTAD — CID/AECS 4 Electrical Characteristics and Requirements 4.1 Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­

max2919

Contextual Info: S A M S UNG S E M I C O N D U CTOR INC 05 KS54AHCT Q -f KS74AHCT D E ^ T ^ m M a OODSTlñ 3 J T-43-21 Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54J74ALS logic family • Low power consumption characteristic of CM O S

AHCT03

Contextual Info: S A M S U N G S E M I C O N D U C T O R INC OE DE| 7^4142 □ □ □ S c125 S | T-V3-ZÎ KS54AHCT M KS74AHCT w " FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with These devices contain four independent 2-input NAND gates with open-drain outputs. Using a suitable pull-up