SAMSUNG DRAM Search Results
SAMSUNG DRAM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CDCV857ADGGG4 | Texas Instruments | 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 |
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| CDCV857ADGGR | Texas Instruments | 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 |
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| CDCV857ADGG | Texas Instruments | 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 |
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| CDCVF2505DG4 | Texas Instruments | PLL Clock Driver for Synch. DRAM & Gen. Purp. Apps W/Spread Spectrum Compatibility, Power Down Mode 8-SOIC -40 to 85 |
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| CDCVF2505PW | Texas Instruments | PLL Clock Driver for Synch. DRAM & Gen. Purp. Apps W/Spread Spectrum Compatibility, Power Down Mode 8-TSSOP -40 to 85 |
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SAMSUNG DRAM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K5E1H12ACM
Abstract: samsung K5E1H12ACM samsung mobile samsung nand ddr SEC k4x DDR333 samsung ddr samsung dram
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figure15120nsk5e1h12acmsamsung k5e1h12acm+6 | |
lpddr2 pcb design
Abstract: lpddr2 samsung lpddr2 lpddr2 datasheet LPDDR2 SDRAM samsung samsung* lpddr2 lpddr2 samsung lp-ddr2 Datasheet LPDDR2 SDRAM "read channel" Samsung
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40ohm800mbps48ohmlpddr2 pcb design+9 | |
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Contextual Info: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than |
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
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br-10-all-001k9f2g08u0ck9k8g08u0dk9abg08u0a+7 | |
K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
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br-09-all-001k9f2g08u0bk9hcg08u1m-pcb0k9ncg08u5m-pcb0+7 | |
samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
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bro-09-dram-001samsung emmc 4.5emmcsamsung* lpddr2+7 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung |
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kmm5401000b/bggd1514b1mx40kmm5401000b+5 | |
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Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung |
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kmm540512cm512kx40isa512kbitsx40256kx4+4 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung |
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m5324000v/vg/vpkmm5324000vbitsx3224-pin+5 | |
samsung LRAContextual Info: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung |
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kmm536512w3/w3gkmm536512w3a512k40-pin+6 | |
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Contextual Info: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B |
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g01s111kmm594020b20-pin30-pin+4 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung |
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kmm5916000/tkm41c16000/t24-pin30-pin+4 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung |
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kmm591000an591000ankmm591oooankm44c1oooaj+5 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DD1S1S2 Ô27 I SMGK KMM5401000BM DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000BM is a 1M b itsx4 0 Dynamic RAM high density m em ory module. The Samsung |
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kmm5401000bm1mx4020-pin72-pin+4 | |
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KMM5361000
Abstract: KMM5361000/A
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kmm5361000bitsx3620-pin72-pin+4 | |
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Contextual Info: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung |
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kmm5402000bm2mx40bitsx4020-pin+4 | |
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Contextual Info: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung |
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kmm584000bkm41c4000bj20-pin30-pin+4 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E J> • 7 ^ 4 1 4 5 GG151Q1 3b5 m S tlG K KMM584020B DRAM MODULES 4M x8 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020B is a 4M bitsx8 Dynamic RAM high density memory module. The Samsung KMM584020B |
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gg151q1kmm584020b20-pin30-pin+4 | |
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Contextual Info: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung |
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kmm581000b581000bkmm581km41c1ooobj+5 | |
SP16K
Abstract: kmm5362003
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d015bbbsp16kkmm5362003/gkmm5362003-7+5 | |
KMM581000BNContextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung |
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001s0kmm581020bnkmm581000bnkm44c1000bu+5 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam ic RAM high density memory module. The Samsung |
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gg1472dkmm532512w/wgkmm532512w40-pin+5 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung |
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kmm591000bnkm44c1000bj20-pinkm41c1000cj+3 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung |
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kmm5362000a1/a1gkmm5362000a1bitsx3620-pin+3 | |