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    SAMSUNG DRAM Search Results

    SAMSUNG DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDCV857ADGGG4
    Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments
    CDCV857ADGGR
    Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments
    CDCV857ADGG
    Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments
    CDCVF2505DG4
    Texas Instruments PLL Clock Driver for Synch. DRAM & Gen. Purp. Apps W/Spread Spectrum Compatibility, Power Down Mode 8-SOIC -40 to 85 Visit Texas Instruments Buy
    CDCVF2505PW
    Texas Instruments PLL Clock Driver for Synch. DRAM & Gen. Purp. Apps W/Spread Spectrum Compatibility, Power Down Mode 8-TSSOP -40 to 85 Visit Texas Instruments Buy

    SAMSUNG DRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K5E1H12ACM

    Abstract: samsung K5E1H12ACM samsung mobile samsung nand ddr SEC k4x DDR333 samsung ddr samsung dram
    Contextual Info: SEC-Mobile DRAM Mobile DRAM’s Frequently violated parameters Application Note Version 1.0 May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


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    figure15120nsk5e1h12acmsamsung k5e1h12acm+6samsung mobilesamsung nand ddrsec k4xddr333samsung ddrsamsung dram PDF

    lpddr2 pcb design

    Abstract: lpddr2 samsung lpddr2 lpddr2 datasheet LPDDR2 SDRAM samsung samsung* lpddr2 lpddr2 samsung lp-ddr2 Datasheet LPDDR2 SDRAM "read channel" Samsung
    Contextual Info: SEC-Mobile-UtRAM Application Note for General PCB Design Guidelines for Mobile DRAM Version 1.0, May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co., LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


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    40ohm800mbps48ohmlpddr2 pcb design+9lpddr2samsung lpddr2lpddr2 datasheetlpddr2 sdram samsungsamsung* lpddr2lpddr2 samsunglp-ddr2datasheet lpddr2 sdramread channel" samsung PDF

    Contextual Info: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer­ ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than


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    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    br-10-all-001k9f2g08u0ck9k8g08u0dk9abg08u0a+7k4x2g323pck9f4g08u0b-pcb0k9f1g08u0ck9f2g08u0bk9f2g08u0b-pcb0k9f1g08u0d-scb0k9wbg08u1m-pib0 PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    br-09-all-001k9f2g08u0bk9hcg08u1m-pcb0k9ncg08u5m-pcb0+7k9f1g08u0ck9f4g08u0b-pcb0k9f2g08u0b-pcb0k9f4g08u0bk9wbg08u1mk9f1g08u0c-pcb0k9g4g08u0b PDF

    samsung eMMC 4.5

    Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
    Contextual Info: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile


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    bro-09-dram-001samsung emmc 4.5emmcsamsung* lpddr2+7lpddr2samsung emmcemmc 4.5emmc samsungsamsung movinandlpddr2 mcpsamsung lpddr2 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung


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    kmm5401000b/bggd1514b1mx40kmm5401000b+5bitsx4020-pin72-pin110nskmm5401000b-7 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung


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    kmm540512cm512kx40isa512kbitsx40256kx4+420-pin72-pinkmm540512cm-6kmm540512cm-7 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung


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    m5324000v/vg/vpkmm5324000vbitsx3224-pin+572-pin110nskmm5324000v-7130nskmm5324000v-8 PDF

    samsung LRA

    Contextual Info: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung


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    kmm536512w3/w3gkmm536512w3a512k40-pin+672-pin22fifkmm536512w3-7130nskmm536512w3-8samsung lra PDF

    Contextual Info: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B


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    g01s111kmm594020b20-pin30-pin+422/ifkmm594020b-6110nskmm594020b-7 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


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    kmm5916000/tkm41c16000/t24-pin30-pin+422/ufkmm5916000-6110nskmm5916000-7 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


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    kmm591000an591000ankmm591oooankm44c1oooaj+520-pinkm41c1ooobj30-pin22fif130ns PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DD1S1S2 Ô27 I SMGK KMM5401000BM DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000BM is a 1M b itsx4 0 Dynamic RAM high density m em ory module. The Samsung


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    kmm5401000bm1mx4020-pin72-pin+422/if110nskmm5401000bm-7130ns PDF

    KMM5361000

    Abstract: KMM5361000/A
    Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung


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    kmm5361000bitsx3620-pin72-pin+4150nskmm5361000-10kmm5361000-kmm5361000/a PDF

    Contextual Info: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung


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    kmm5402000bm2mx40bitsx4020-pin+472-pin22fif110nskmm5402000bm-7 PDF

    Contextual Info: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung


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    kmm584000bkm41c4000bj20-pin30-pin+422/ifkmm584000b-6110nsm584000b-7 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b7E J> • 7 ^ 4 1 4 5 GG151Q1 3b5 m S tlG K KMM584020B DRAM MODULES 4M x8 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020B is a 4M bitsx8 Dynamic RAM high density memory module. The Samsung KMM584020B


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    gg151q1kmm584020b20-pin30-pin+4kmm584020b-6110nskmm584020b-7130ns PDF

    Contextual Info: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


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    kmm581000b581000bkmm581km41c1ooobj+520-pln30-pin581000b-130ns150ns PDF

    SP16K

    Abstract: kmm5362003
    Contextual Info: SAMSUNG ELECTRONICS b?E D INC • ? cJbmHH D015BbB bS7 I KMM5362003/G SP16K DRAM MODULES 2M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5362003/G is a 2M b itx 3 6 Dynamic RAM high density m em ory module. The Samsung


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    d015bbbsp16kkmm5362003/gkmm5362003-7+5kmm5362003-8110ns150nsin20-pinkmm5362003 PDF

    KMM581000BN

    Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung


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    001s0kmm581020bnkmm581000bnkm44c1000bu+520-pin30-pin22/tf110nskmm581020bn-7 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam­ ic RAM high density memory module. The Samsung


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    gg1472dkmm532512w/wgkmm532512w40-pin+572-pin22jif130ns150ns180ns PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


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    kmm591000bnkm44c1000bj20-pinkm41c1000cj+330-pin110nskmm591000bn-7 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung


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    kmm5362000a1/a1gkmm5362000a1bitsx3620-pin+372-pin130ns150ns PDF