SAMSUNG CAPACITANCE YEAR CODE Search Results

samsung capacitance Manufacturing location

Contextual Info: PC100/PC133 µSODIMM M463S3254CK1 32Mx64 SDRAM µSODIMM Revision 0.2 Sept. 2001 Rev. 0.2 Sept. 2001 M463S3254CK1 PC100/PC133 µSODIMM Revision History Revision 0.0 July 2001 • First published. Revision 0.1 (Aug. 2001) • SPD correction Revision 0.2 (Sept. 2001)

M463S1654CT1-L7A

Abstract: K4S561632C M463S1654CT1 COMMAND K4S561632C-TC k4s561632 date code samsung capacitors samsung capacitance year code
Contextual Info: PC100/PC133 µSODIMM M463S1654CT1 16Mx64 SDRAM µSODIMM Revision 0.1 Sept. 2001 Rev. 0.1 Sept. 2001 M463S1654CT1 PC100/PC133 µSODIMM Revision History Revision 0.0 Aug. 2001, Preliminary • First published. Revision 0.1 (Sept. 2001) • Reduced IDD1/4 in DC Characteristics.

CDC2509

Abstract: samsung capacitance year code
Contextual Info: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.

Contextual Info: M464S0424FTS PC133/PC100 SODIMM M464S0424FTS SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424FTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

PC133 133Mhz cl3

Abstract: intel date code format
Contextual Info: PC100/PC133 µSODIMM M463S3254DK1 M463S3254DK1 SDRAM µ SODIMM 32Mx64 SDRAM µSODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S3254DK1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M464S1654DTS

Abstract: k4s561632d-tl7
Contextual Info: M464S1654DTS PC133/PC100 SODIMM M464S1654DTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1654DTS consists of four CMOS 16M x 16 bit with

M464S3254DTS

Abstract: k4s561632d-tl7
Contextual Info: PC133/PC100 SODIMM M464S3254DTS M464S3254DTS SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

K4S561632D-T

Contextual Info: PC100/PC133 µSODIMM M463S1654DT1 M463S1654DT1 SDRAM µ SODIMM 16Mx64 SDRAM µSODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S1654DT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M463S1654DT1 consists of four CMOS 16M x 16 bit with

Contextual Info: M464S0424ETS PC133/PC100 SODIMM M464S0424ETS SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424ETS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: PC100 Registered DIMM M377S0823FT3 M377S0823FT3 SDRAM DIMM Intel 1.2 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S0823FT3 is a 8M bit x 72 Synchronous

M390S1723DT1

Abstract: M390S1723DT1-C7C PC133 registered reference design
Contextual Info: M390S1723DT1 PC133 Registered DIMM M390S1723DT1 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S1723DT1 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

K4S561632C

Abstract: M464S1654CTS
Contextual Info: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with

Contextual Info: PC100 Registered DIMM M377S3253CT3 M377S3253CT3 SDRAM DIMM Intel 1.2 ver Base 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3253CT3 is a 32M bit x 72 Synchronous

M464S325

Contextual Info: M464S3254CTS PC133/PC100 SODIMM M464S3254CTS SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254CTS is a 32M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

SO-DIMM

Contextual Info: PC133/PC100 µSODIMM M463S0924DT1 8Mx64 SDRAM µSODIMM Revision 0.4 Sept. 2001 Rev. 0.4 Sept. 2001 M463S0924DT1 PC133/PC100 µSODIMM Revision History Revision 0.4 Sept.,2001 Rev. 0.4 Sept. 2001 PC133/PC100 µSODIMM M463S0924DT1 M463S0924CT1 SDRAM µ SODIMM

Contextual Info: PC133/PC100 µSODIMM M463S1724DN1 16Mx64 SDRAM µSODIMM for sTSOP Revision 0.0 Sept. 2001 Rev. 0.0 Sept. 2001 M463S1724DN1 PC133/PC100 µSODIMM Revision History Revision 0.0 Sept., 2001 Rev. 0.0 Sept. 2001 PC133/PC100 µSODIMM M463S1724DN1 M463S1724DN1 SDRAM µ SODIMM

Contextual Info: PC100 Registered DIMM M377S6453DT0 M377S6453DT0 SDRAM DIMM Intel 1.2 ver Base 64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S6453DT0 is a 64M bit x 72 Synchronous

M390S3320DT1-C7A

Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range

M390S3320DT1

Abstract: M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)

Samsung M464S6453CKS-L7A

Abstract: m464s64* samsung M464S6453CKS K4S510832C
Contextual Info: M464S6453CKS PC133/PC100 SODIMM Revision History Revision 0.0 Sept. 2001 Revision 0.1 (Feb. 2002) - Typo in SPD 127byte corrected This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited

L35H

Contextual Info: M464S0824ETS PC133/PC100 SODIMM M464S0824ETS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0824ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: M464S0824FTS PC133/PC100 SODIMM M464S0824FTS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0824FTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

samsung capacitance Manufacturing location

Abstract: 128Mx72 SDRAM Intel 1.2 ver Base
Contextual Info: PC100 Registered DIMM M377S2858DT3 M377S2858DT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2858DT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2858DT3 consists of eighteen CMOS Stacked