K524G2GACB-A050
Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K524G2GACB-A050
A10/AP
K524G2GACB-A050
samsung "nand flash" derating
K524G2GACB
MCP 256M nand samsung mobile DDR
nand flash DQS
KF94
samsung MCP K5
transistor BA 92 samsung transistor
4gb nand flash
SAMSUNG MCp nand ddr
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KBY00
Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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KBY00U00VA-B450
A10/AP
KBY00
LPDDR 8Gb
137FBGA
KBY00U00VA
MCP 256M nand samsung mobile DDR
samsung "nand flash" derating
SAMSUNG MCP
sdram 2g
"4bit correction"
DQ28D
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153-FBGA
Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K522H1HACF-B050
A10/AP
153-FBGA
153FBGA
153Ball FBGA
samsung "nand flash" derating
MCP LPDDR 1Gb 512Mb
K522H1HACF-B050
k522h1
MCP 256M nand samsung mobile DDR
MCP 1Gb nand 512mb dram 130
2gb nand mcp
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MCP 256M nand samsung mobile DDR
Abstract: MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp
Text: Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb 256M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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KA100O015E-BJTT
A10/AP
MCP 256M nand samsung mobile DDR
MCP MEMORY
samsung nor nand ddr mcp
MCP NAND DDR
KA100O015E
SAMSUNG MCP
KA100O015E-BJTT
137FBGA
nand mcp samsung ka
nand sdram mcp
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR KS54HCTLS KS74HCTLS INC □2 DE| 7U4145 00Qb3D7 I | on 8-1np ut Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of C M O S • High-Drive-Current outputs:
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7U4145
00Qb3D7
KS54HCTLS
KS74HCTLS
54/74LS
7Tb414S
90-XO
14-Pin
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HCTLS
Abstract: No abstract text available
Text: SAMSUNG SE MIC ONDU CT OR INC os de| 7Tb4ma KS54HCTLS H O O KS74HCTLS • DDGtasi 0 63 51 D Quad Schmitt-Trigger NAND Gates Preliminary Specifications FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with These Schmitt-trigger d evices contain four Independent
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KS54HCTLS
KS74HCTLS
54/74LS
KS74H
7Tb414S
90-XO
14-Pin
HCTLS
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC D5 KS54AHCT KS74AHCT 12 de| ? ^ bm4s o o o s ,i3t, s | t -1 Triple 3-lnpul NAND Gates with Opert-Drain Outputs FEATURES DESCRIPTION • Function, pln-out, speedand drive compatibility with 54I74ALS logic family • Low power consumption characteristic of CMOS
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KS54AHCT
KS74AHCT
71b414S
90-XO
14-Pin
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1411D
Abstract: 74142 logic diagram AHCT20
Text: SAMSUNG SEMICONDUCTOR IN C 02 KS54AHCT 2 ^ KS74AHCT D e | TlbM lM S OGG5 T 41 T J~_ D . - ^ *7 ^ 3 -* f Dual 4-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54f74ALS logic family • Low power consumption characteristic of CMOS
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KS54AHCT
KS74AHCT
54f74ALS
KS74AHCT:
KS54AHCT:
300-mil
7Tb414S
90-XO
14-Pin
1411D
74142 logic diagram
AHCT20
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KS74 SOP
Abstract: KS74
Text: SAMSUNG SEMICONDUCTOR INC 05 KS54HCTLS f i f i KS74HCTLS u u , D E l ? cit . m 4 E O00b274 1 I T T Quad 2-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54S74LS logic family • Low power consumption characteristic of CMOS
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O00b274
KS54HCTLS
KS74HCTLS
54S74LS
KS74HCTLS:
300-mil
7Tb414S
90-XO
14-Pin
KS74 SOP
KS74
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KS74
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 02 K S 7 4H C T l1 1 0 DÊJjj 7 citi14 l 4 5 OODba^Q □ Triple 3-Input NAND Gates : — FEATURES DESCRIPTION. • Function, pin-out, speed and drive compatibility with 54174LS logic family • Low power consumption characteristic of CMOS
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54174LS
KS74HCTLS:
KS54HCTLS:
300-mil
7Tb414S
90-XO
14-Pin
KS74
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taig
Abstract: No abstract text available
Text: SAMSUNG SE MIC O N D U C T OR INC OB 5T| 7^4142 KS54HCTLS O Q KS74HCTLS “ 00Qb303 4 Dual 4-Input NAND Gates with Open-Drain Outputs -f - 4 3 - I -1 FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family
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00Qb303
KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
taig
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC OE KS74HCTLS ^ 3 D E I 71fc.4142 D 0 D L 3 S 4 0 J~. 13-Input NAND^Gates FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with S4/74LS logic family • Low power consumption characteristic of CMOS • High-Drive-Current outputs:
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KS74HCTLS
13-Input
S4/74LS
KS74HCTLS:
KS54HCTLS:
300-mil
7Tb414S
90-XO
14-Pin
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S74AHCT
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC DE DË| ~ KS54AHCT f i f i KS74AHCT u u GOOSTIL Q -7 ^ 3 -2 / Quad 2-lnput NAND Gates FEA TU R E S DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CM OS
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KS54AHCT
KS74AHCT
54/74ALS
7Tb414S
90-XO
14-Pin
S74AHCT
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICO NDUCT OR INC 02 KS54AHCT o n KS74AHCT_ DE| 7 ^ 1 4 2 0005^4=] 3 J } f 4 v lì 8-Input Nand Gate FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS
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KS54AHCT
KS74AHCT_
54/74ALS
KS74AHCT:
KS54AHCT:
300-mil
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MI CO ND UCTOR INC OS DEI 7^4142 KS54AHCT O O KS74AHCT “ □□□ST4S t. | -pH*-*! Dual 4-lriput NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS
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KS54AHCT
KS74AHCT
54/74ALS
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 0 2 D E J p P T t m M E KS74AHCT * 3 3 Q GO ST Tf TT 13-Input NAND Gates FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic ol CMOS • High-Drive-Current outputs:
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KS74AHCT
13-Input
54/74ALS
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I C ONDU CT OR INC OB D E * 7=1^4145 OOQbETM 7 Triple 3-Input NAND Gates with Open-Drain Outputs •-<43-SL\ KS54HCTLS H O KS74HCTLS FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS
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KS54HCTLS
KS74HCTLS
54/74LS
KS74HCTLS:
KS54HCTLS:
300-mil
43-SL\
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I CON DU CT OR INC OE KS54HCTLS f ì i KS74HCTLS v 1 F e | T U M l M a 000 bE7L s | ~T-*f3-aj • Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with S4/74LS logic family
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KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I CO ND UCTOR INC 03 DE | 7 ^ 4 1 4 2 D00L5fl0 7 | Quad 2-Input NAND Gates with Open-Drain Outputs KS54HCTLS M KS74HCTLS w T " H 3 -V I FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS
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D00L5fl0
KS54HCTLS
KS74HCTLS
54/74LS
KS74HCTLS:
KS54HCTLS:
300-mil
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: DE,I 7 % H 1 4 E S A M S U N G S E M I C O N D U C T O R INC 02 □ □ O S cn B L> | 3 D • ' ;^ • • r '7^S7- 2 / Quad Schmitt-Trigger NAND Gates KS54ÀHCT Ï O Ö KS74AHCT Preliminary Specifications FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with
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KS74AHCT
54/74ALS
KS74AHCT:
KS54AHCT:
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SA MSUNG SE MI C O N D U C T OR INC OE KS54AHCT -f/J KS74AHCT l u d I | 7 ^ 4 1 4 5 0005^32 ñ | Triplé 3-Input NAND Gates FEATURES DESCRIPTION • Function, pin-out, speed end drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS
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KS54AHCT
KS74AHCT
54/74ALS
KS74AHCT:
300-mil
7Tb414S
90-XO
14-Pin
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samsung "nand flash" derating
Abstract: XTAL1 4m MG30
Text: Information Manual March 1998 Lucent Technologies MG30 NAND FlashTAD — CID/AECS 4 Electrical Characteristics and Requirements 4.1 Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso
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max2919
Abstract: No abstract text available
Text: S A M S UNG S E M I C O N D U CTOR INC 05 KS54AHCT Q -f KS74AHCT D E ^ T ^ m M a OODSTlñ 3 J T-43-21 Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54J74ALS logic family • Low power consumption characteristic of CM O S
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T-43-21
KS54AHCT
KS74AHCT
54J74ALS
7Tb414S
90-XO
14-Pin
max2919
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AHCT03
Abstract: No abstract text available
Text: S A M S U N G S E M I C O N D U C T O R INC OE DE| 7^4142 □ □ □ S c125 S | T-V3-ZÎ KS54AHCT M KS74AHCT w " FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with These devices contain four independent 2-input NAND gates with open-drain outputs. Using a suitable pull-up
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KS54AHCT
KS74AHCT
54/74ALS
KS74AHCT:
S54AHCT:
300-mil
7Tb414S
90-XO
14-Pin
AHCT03
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