SA33 DATASHEET Search Results

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

2228H

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: MB84VD2118XEM-70 MB84VD2119XEM-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

sa728

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

BGA-56P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50218-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XDA-85/MB84VD2119XDA-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: MB84VD2108XEM-70 MB84VD2109XEM-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

MARKING HRA

Abstract: 4kw marking
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

MARKING HRA

Abstract: SEC MCP 4kw marking
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

BGA-56P-M02

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50307-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

4kw marking

Abstract: sa33 Datasheet
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50306-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

F8000

Abstract: c0000 AT49BV160S AT49BV160ST SA10 07FFF
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV160S

Abstract: AT49BV160ST SA10 ATMEL 910
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

a8000

Abstract: E0000 AT49BV160S AT49BV160ST SA10 F0000 irreversible locking
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

07FFF

Abstract: sa59 F8000 SA10 10ffff a8000 64c1 67FFF
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: M CP Multi-Chip Package FLASH M EM ORY & SRAM CMOS 16M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM MB84VA2108-10/MB84VA2109-io • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature

SA10

Abstract: F8000 41/AT49BV320S
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: M CP Multi-Chip Package FLASH M EM ORY & SRAM 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2102-10/MB84VA2103-io • FEATURES

67FFFH

Abstract: F9805 II1I11
Contextual Info: MCP Multi-Chip Package FLASH MEMORY & SRAM 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM MB84VA2106-10/MB84VA2107-io • FEATURES • Power supply voltage of 2.7 to 3.6 V

SA124

Abstract: Sa84 SA117 sa92 SA98 SA114 SA101 SA97 SA112 SA83
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

sa83

Abstract: SA124
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout