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    S9942 Search Results

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    Samtec Inc ZW-02-14-G-S-994-222

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    Master Electronics ZW-02-14-G-S-994-222
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    Samtec Inc ZW-02-14-T-S-994-222

    FLEXIBLE BOARD STACKING H
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    Newark ZW-02-14-T-S-994-222 Bulk 372 1
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    Sager ZW-02-14-T-S-994-222 372 1
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    Powell Electronics ZW-02-14-T-S-994-222 246 1
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    Samtec Inc ZW-05-14-T-S-994-222

    Board Stackers & Spacers Pin Header 25.25 mm 5 Contacts Solder 1 Rows 2.54 mm ZW Series
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    Master Electronics ZW-05-14-T-S-994-222
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    Avnet Americas ZW-05-14-T-S-994-222 Bulk 1 Weeks 1
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    Newark ZW-05-14-T-S-994-222 Bulk 269 1
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    Sager ZW-05-14-T-S-994-222 269 1
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    Powell Electronics ZW-05-14-T-S-994-222 178 1
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    National Semiconductor Corporation NDS9942

    Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
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    Vyrian NDS9942 4,287
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    S9942 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    s-114dk-2000jan/87p873-g35-552+2p1760-04p873-13 PDF

    S-99422

    Abstract: Si6866DQ 58AR
    Contextual Info: Si6866DQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "5.8 0.040 @ VGS = 2.5 V "5.0 D D TSSOP-8 8 D 7 D 3 6 D 4 5 D S1 1 G1 2 S2 G2 D Si6866DQ G1 G2 Top View S1 S2 N-Channel MOSFET


    Original
    si6866dqs-99422--rev29-nov-99s-99422+158ar PDF

    99420

    Contextual Info: Si4431ADY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    si4431adys-99420--rev29-nov-9999420 PDF

    Si6435ADQ

    Contextual Info: Si6435ADQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "5.5 0.055 @ VGS = –4.5 V "4.1 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6435ADQ G * Source Pins 2, 3, 6 and 7


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    si6435adqs-99421--rev29-nov-99 PDF

    Si6435ADQ

    Abstract: SI6435
    Contextual Info: Si6435ADQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "5.5 0.055 @ VGS = –4.5 V "4.1 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6435ADQ G * Source Pins 2, 3, 6 and 7


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    si6435adq08-apr-05si6435 PDF

    Contextual Info: Si6435ADQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "5.5 0.055 @ VGS = –4.5 V "4.1 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6435ADQ G * Source Pins 2, 3, 6 and 7


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    si6435adqs-99421--rev29-nov-99 PDF

    S1406-06

    Abstract: S1651-01 S1651 S1557-01 S1557 hamamatsu PIN TO5 S1671
    Contextual Info: HAMAMATSU CORP ^ 0G0ES44 m 4 • Specially Configured Photodiodes_ -T-V/-Ù7 < -4 / -s 'I In addition to the many devices described in this catalog, Hamamatsu is able to produce a variety of special devices such as photodiodes with operational amplifiers, thermoelectrically-cooled photodiodes, and linear or area arrays


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    0g0es44s994-22s1446g1964+8s994-13s1557s1557-01s1651s1651-01s1671s1406-06hamamatsu pin to5 PDF

    Contextual Info: Si4431ADY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    si4431adys-99420--rev29-nov-99 PDF

    99422

    Contextual Info: Si6866DQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "5.8 0.040 @ VGS = 2.5 V "5.0 D D TSSOP-8 8 D 7 D 3 6 D 4 5 D S1 1 G1 2 S2 G2 D Si6866DQ G1 G2 Top View S1 S2 N-Channel MOSFET


    Original
    si6866dqs-99422--rev29-nov-9999422 PDF

    NDS9942

    Abstract: m6rj S9942
    Contextual Info: February 1996 N S9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N- and P -C hannel en hancem ent m ode pow er field effect transistors are produce d using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high density


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    nds9942s9942m6rj PDF