S9747 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC S9747 Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 5 0 ii • Hermetically sealed package

S9747

Contextual Info: TOSHIBA S9747 MICROWAVE POWER GaAs MMIC Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 50Ω • Hermetically sealed package

MW200

Abstract: S9747 28N-1
Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC S9747 Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 50Q • Hermetically sealed package

lucent DC-DC POWER MODULE

Abstract: S9747
Contextual Info: Data Sheet July 1998 Lucent Technologies Bell Labs Innovations FE050A, FE100A, FE150A Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 5 Vdc Output; 50 W to 150 W Features • High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.