S810 Search Results

5810A

Abstract: UCN-5810A UCN5810A UCN-5812A UCN5818A-1 UCN-5818A vacuumfluorescent 5818A UCN4810A UCN5812A
Contextual Info: UCN-S810A, UCN-5812A, A N D UCN-5818A BiMOSII SERIAL-INPUT, LATCHED DRIVERS U C N -5 8 1 0 A , U C N -5 8 1 2 A , A N D U C N -5 8 1 8 A B iM O S II S E R IA L -IN P U T , LATCHED D R IV E R S — 10, 20, a n d 32 Bits 0 VDD C LO CK FEATURES • 5 M H z Typical D a ta Inp u t R a te

power BJT

Abstract: pwm driver sot-26 S-8100 S8100 sot-26 led driver pwm 5S8100 9.1V Zener SOT26 PWM STD13003 "Power bjt
Contextual Info: S8100 Semiconductor Power LED Driver IC ◈ Description The S8100 is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The S8100 is capable to drive high current, high brightness LEDs up to 1.0 A by using additional external

9.1V Zener

Abstract: S-8100 specifications of bjt rating c18v 12V 10A BJT mk0260 S8100 pwm driver sot-26 SOT26 PWM BJT Gate Drive circuit
Contextual Info: S8100 Power LED Driver IC ◈ Description The S8100 is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The S8100 is capable to drive high current, high brightness LEDs up to 1.0 A by using additional external

CRL4

Abstract: s8100
Contextual Info: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10

Contextual Info: MS81OOORKX-70/85/10/20 Issue 1.0: June 1989 M S81000RKX 1Mx8 CM0S SRAMModule ADVANCE PRODUCT INFORMATION 1,048,576 x 8 CMOS High Speed Static RAM Pin Definition Features Vcc A0 A1 A2 A3 DO D1 A4 A5 A6 A7 AÔ A13 D2 CS A15 A16 A17 A9 GND OE A14 D3 D4 D5 WE

Contextual Info: Cone Loudspeakers,Wall Baffle, Ceiling Grilles, and Assemblies Speaker Model Variations and Accessories S86 S810 • High quality, direct radiator speakers Features • 7 watts and 15 watts power handling capacity • Provision for quick attachment of transformer

Contextual Info: SK82 – S810 8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak

Contextual Info: Extract from the online catalog FLKM 34/LA/S810 Discontinued item Order No.: 2281869 Interface module Commercial data EAN 4017918055097 Pack 1 pcs. Customs tariff 85369010 Weight/Piece

Contextual Info: S8100 Power LED Driver IC Description The S8100 is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The S8100 is capable to drive high current, high brightness LEDs up to 1.0 A by using additional external

S5 100 B112 MT RELAY

Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless

Si6926ADQ

Contextual Info: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8

Si6928DQ

Abstract: Si6928DQ-T1
Contextual Info: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2

Si6926ADQ

Contextual Info: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8

SI4688DY

Contextual Info: New Product Si4688DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.0145 at VGS = 4.5 V 9.8 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT

Contextual Info: Si6475DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.011 at VGS = - 4.5 V - 10 - 12 0.0135 at VGS = - 2.5 V -9 0.017 at VGS = - 1.8 V -8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S*

8254aa

Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Contextual Info: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.

S5500G

Abstract: S-8-08FR S-8R-06FR S5103 S5166 S5500D S5102 S5104 S-8R-01FR S5277D
Contextual Info: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08

Contextual Info: molaic 1M X 8 S R A M M S 810 00R K X A -8 5 /1 0 /1 2 Issue 1.1 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Sem iconductor Inc. Pin Definition 1,048,576 x 8 CMOS High Speed Static RAM vcc AO A1 A2 A3 DO D1 A4 A5 Features Fast Access Times of 85/100/120 nS

MAX9042

Abstract: MAX9052 MAX9053
Contextual Info: MAX9039–MAX9043/ MAX9050–MAX9053 Micropower, Single-Supply, UCSP/SOT23 Comparator + Precision Reference ICs General Description Features The MAX9039–MAX9043 and MAX9050–MAX9053 feature combinations of low-power comparators and precision voltage references. Their operating voltage range

MARKING CODE PARI SOT23

Abstract: TSS10CXA t5810 marking asa bdt57 TS809 TS810 marking aAG TS309 OC123
Contextual Info: TAIWAN $ SEMICONDUCTOR pb RoHS TS809/810 Series Microprocessor Reset Circuit CO M PLIANCE SO T-23 Pin D efinition: 1. Ground 4! 1 2. RESET(RESET) 3. Vcc 2 General Description The T S 809/810 series are m icroprocessor (jjP ) su pervisory circuit used to m onitor the pow er supplies in pP and

Contextual Info: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8

S8104

Abstract: TPCS8104
Contextual Info: S8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV S8104 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

LCD display jhd

Abstract: jhd 16a S-1380 JHD LCD S-81250SGY s-7116A TRANSISTOR PNP BA RT SOT 89 S-87050 M6M80041 notebook Universal LCD inverter AVT
Contextual Info: CMOS IC Product Catalog Components Headquarters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents

Contextual Info: New Product Si7328DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0066 at VGS = 10 V 35 0.0076 at VGS = 4.5 V 35 Qg (Typ.) 21 nC • Halogen-free Option Available • TrenchFET Power MOSFET RoHS