S725 Search Results

Contextual Info: AN-30: USING THE S725420A FOR DAT ABUS FUNNELING Q Using the Q S725420A for Databus Funneling INTRODUCTION The QSI S725420A 256 x 36 x 2 CMOS bidirectional FIFO is an innovative device which tu rn s the d iffic u lt ta s k of fu n n e lin g and defunneling different size databuses into an

Contextual Info: 14.2 O / - r- CX> r o X EEE: / LD n i Ll I u -VC=3-I \ I A" 24 . 5 ENG.NO. G H J K 35725 - 30*0 2. 85 2.9 3.8 4.0 35725 - 18*0 3. 4 3.6 5. 2 5.2 35725 - 19*0 5. 3 4.5 6. 2 5.6 S7253000.dgn WIRE RANGE SIZE AWG#22-#20 S AWG#18 -# 14 M AWG# 14-#12 L

l31c

Abstract: STO 23-5 Voltage Regulators CSRT-1 GI 312 diode SLVS ST TPS7201 TPS7201Q TPS7233Q TPS7233Y TPS7248Q
Contextual Info: TPS7201Q, TPS7233Q, TPS7248Q, S7250Q TPS7201Y, TPS7233Y, TPS7248Y, S7250Y MICROPOWER LOW-DROPOUT LDO VOLTAGE REGULATORS SLVS102C - MARCH 1995 - REVISED AUGUST 1995 A vailable in 5-V, 4.85-V, and 3.3-V Fixed-O utput and A d justab le Versions D PACKAGE

Contextual Info: IDWG. 10. SD-35725-002 NOTES 1. MATERIAL : BRASS , 0 . 4 5 m m TH ICKNESS 2. PA RT NO. AND FINISH MATERIAL NO. PART NO. FINISH 35725- 24 00 357252400 UNPLATED 35725-2411 357252411 POST PLATED TIN 35725- 24 10 357252410 POST PLATED TIN H TRADE MARK ITEM 3. A P PL IC AB LE WIRE RANGE

Contextual Info: New Product Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 25 Channel-2 ID (A)a, e Qg (Typ) rDS(on) (Ω)

Si3458BDV

Abstract: Si3458BDV-T1-E3
Contextual Info: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS

Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Z685

Abstract: C3352 Z785 501Z k145 po 02 BE-211
Contextual Info: 9J7 JR^VR_ DVP^[ \U[`[ _RZ_[^ CVZR1a\ f=RN`a^R_ Yd8-/7W-1 0-1-z785~ z03/-*-~5V oqo 23~1 |2//~|725 287387 Yuz5-286 6~/~|7-21 {< -167z//z7-21 326-7-21 Sc33~z5z1|~b lV tV mV xV u t<3~T Ym-+,7 po Y fz5. po 6~/~|7z{/~ Yj-+, 63~~} 5~63216~ *5~48~1|< b \.j= Yv-}~ 5z1+~ 2* 32:~5 6285|~b _W\^ufe

SUD50N06-36

Abstract: SUD50N06-36-E3
Contextual Info: New Product SUD50N06-36 Vishay Siliconix N-Channel 60-V D-S , 150 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 12 0.042 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg & UIS Tested RoHS 10.5 nC

n03n

Abstract: DSP56002 ti31 58af S-8675 S-7641 TXC 40MHz xtal S7504 TXC 40MHz oscillator Nippon capacitors
Contextual Info: Order this document by DSP56002/D MOTOROLA - SEMICONDUCTOR TECHNICAL DATA Advance Information 24-Bit General Purpose Digital Signal Processor DSP56002 Pin Grid Array PGA Available in a 132 pin ceramic throughhoie package. Plastic Quad Flat Pack (PQFP) Available in a 132 pin, small footprint,

SUP90N08-6M8P

Contextual Info: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0068 at VGS = 10 V 90d 75 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

72511

Abstract: SiE850DF
Contextual Info: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

SiE850DF

Abstract: 72511
Contextual Info: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

Contextual Info: MiWi Demo Kit User’s Guide  2012 Microchip Technology Inc. DS70687A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. •

Contextual Info: 1 Mbit SPI Serial Flash SST25VF010A A Microchip Technology Company Data Sheet SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with

Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

A720 transistor

Abstract: transistor A720 PJ82 SD1428 SJ26 PJ216 CODE PJ18 S747 PJ113 PJ211W
Contextual Info: Wall Plates Section K Wall Plates Index Product Wall Plate Types, Finishes and Configurations Features and Benefits Toggle Switches Duplex and Rectangular Receptacles Rectangular and Single Receptacles Single Receptacles Blanks, Strap Mount and Box Mount Toggle Switch and Duplex Combinations

Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

DG469

Abstract: DG469EY-T1-E3 1Nf245
Contextual Info: DG469/470 Vishay Siliconix High Voltage, Single and Dual Supply SPDT Analog Switch with Enable Pin DESCRIPTION The DG469/470 are high voltage SPDT switches, with a typical on resistance of 3.6 Ω and typical flatness of 0.4 Ω. The DG469 and DG470 are identical, except the DG470

SI7196DP

Contextual Info: New Product Si7196DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 16g 0.0145 at VGS = 4.5 V 16g VDS (V) 30 Qg (Typ) 13.2 nC S COMPLIANT • Notebook • Core Voltage High-Side • System Power Low-Side

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

tda ic

Contextual Info: S725420A PRELIMINARY High-Speed CMOS 256 x 36 x 2 Bi-directional FIFO ô S725420A FEATURES/BENEFITS • Fast cycle tim es: 20/25/30/35 ns • T w o 256 x 36-bit FIFO buffers • Full 36-bit word width • Selectable 36/18/9-bit word width on port B • Fully asynchronous operation of port A and port B

SUP90N06-6M0P

Abstract: ON148
Contextual Info: SUP90N06-6m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.006 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

si4914b

Abstract: Si4914BDY-T1-E3
Contextual Info: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V 8d VDS (V) Channel-1 30 Channel-2