S7106 Search Results

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

H 1061

Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

SST29EE010

Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

SST29EE512

Abstract: id9301
Contextual Info: 512 Kilobit 64K x8 Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

SST29LE010

Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29LE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 3.0-3.6V for SST29LE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)

TB-17

Abstract: Si4642DY Si4642DY-T1-E3 74430
Contextual Info: New Product Si4642DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.00375 at VGS = 10 V 34 0.0047 at VGS = 4.5 V 30 VDS (V) 30 Qg (Typ) MOSFET and Schottky Diode

Contextual Info: SiP4610A/B Vishay Siliconix Protected 1-A High-Side Load Switch APPLICATIONS • Peripheral Ports FEATURES • • • • • • • 1 A Continuous Output Current 2.4 V to 5.5 V Supply Voltage Range User Settable Current Limit Level Low Quiescent Current

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

SST29LE512

Abstract: t103 tida1 SST29EE512 SST29VE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 / SST29LE512 / SST29VE512 SST29EE / LE / VE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 – 3.0-3.6V for SST29LE512

SST29EE010

Abstract: SST29LE010 SST29VE010
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 3.0-3.6V for SST29LE010

GLS29EE512

Abstract: GLS29EE512-70-4I-NH GLS29EE512-70-4I-NHE GLS29EE512-70-4C-NH GLS29EE512-70-4C-EHE 32-PIN GLS29EE512-70-4C-NHE GLS29EE512-70
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM GLS29EE512 GLS29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for GLS29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

SST29LE512

Abstract: SST29VE512 SW2-301
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29LE512 / SST29VE512 SST29LE / VE512512Kb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512

S71062

Abstract: SST29EE020-120-4C-NH SST29EE020 SST29LE020 SST29VE020
Contextual Info: 2 Mbit 256K x8 Page-Write EEPROM SST29EE020 / SST29LE020 / SST29VE020 SST29EE / LE / VE0202Mb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE020 – 3.0-3.6V for SST29LE020

DG407B

Abstract: DG406B S8-A marking DIODE marking S4 57 407b
Contextual Info: DG406B/407B Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406B is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The

SST29EE010

Abstract: SST29LE010 SST29VE010
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet SST29EE / LE / VE0101Mb Page-Write flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010

SST29EE010

Abstract: SST29EE010-90-4I-NH SST29LE010 SST29VE010
Contextual Info: 1 Megabit 128K x8 Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010 – 3.0-3.6V for the SST29LE010 – 2.7-3.6V for the SST29VE010 • Superior Reliability

SST29EE512

Abstract: SST29LE512 SST29VE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet SST29EE / LE / VE512512Kb Page-Write flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512

SST29EE020

Abstract: SST29LE020 SST29VE020
Contextual Info: 2 Mbit 256K x8 Page-Write EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet SST29EE / LE / VE0202Mb Page-Write flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE020 – 3.0-3.6V for SST29LE020 – 2.7-3.6V for SST29VE020

SST29VE010-150-4C-NHE

Abstract: transistor 1061 SST29EE010 SST29LE010 SST29VE010 SST29VE SST29VE010-200-4C-NHE 1504C SST29EE010-70-4I-EHE SST29VE010-150-4C-EHE
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 3.0-3.6V for SST29LE010

SST29EE020

Abstract: SST29LE020 SST29VE020
Contextual Info: 2 Mbit 256K x8 Page-Write EEPROM SST29EE020 / SST29LE020 / SST29VE020 SST29EE / LE / VE0202Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE020 – 3.0-3.6V for SST29LE020

SI4642DY-T1-E3

Contextual Info: New Product Si4642DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.00375 at VGS = 10 V 34 0.0047 at VGS = 4.5 V 30 VDS (V) 30 Qg (Typ) MOSFET and Schottky Diode

73233

Contextual Info: SiP4610A/B Vishay Siliconix Protected 1-A High-Side Load Switch APPLICATIONS • Peripheral Ports FEATURES • • • • • • • 1 A Continuous Output Current 2.4 V to 5.5 V Supply Voltage Range User Settable Current Limit Level Low Quiescent Current

SST38VF166

Abstract: JEP-137 32h 327
Contextual Info: 16 Megabit FlashBank Memory SST38VF166 Data Sheet SST38VF16616Mb x16 FlashBank + 64Kb E2 FEATURES: • • • • • • Single 2.7-3.6V Read and Write Operations Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability Superior Reliability

GLS29EE010-70-4C-NHE

Abstract: GLS29EE010 gls29ee010-70 GLS29EE010-70-4I GLS29EE010-90-4C-EHE gls29ee010-70-4c-phe GLS29EE010-70-4I-E gls29ee
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM GLS29EE010 GLS29EE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for GLS29EE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)