S7013 Search Results

Contextual Info: TARGET SPECIFICATION T h i s p r o d u c t is n o t r e l e a s e d fin d f l i c s p e c i f i c a t i o n s h e r e i n nre s u b je c t to c h iin q e >4MCC 1 .2 5 G B P S V C S E L D R IV E R A N D L IM IT IN G A M P L IF IE R S7013 FEATURES GENERAL DESCRIPTION

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: New Product SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Extremely Low Qgd WFET Technology for Low Switching Losses RoHS • Ultra Low Thermal Resistance Using COMPLIANT ® Top-Exposed PolarPAK Package for Double-Sided Cooling

Si4825DY

Abstract: Si4825DY-T1 Si4825DY-T1-E3
Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • TrenchFET Power MOSFETs • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT S

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Si4810BDY-T1-E3

Abstract: Si4810BDY Si4810BDY-T1
Contextual Info: Si4810BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY TrenchFET Power MOSFETS Fast Switching Speed

MJ 6810

Abstract: 3241F 3652F 6340 pa ic
Contextual Info: ESE3I3EEIIEIZE Small in size. Low in noise. High Stability, Reliability 1EIA Standard Color Coded ’ Standard, AMMO pack, Tape & Reel available. •96 Values per decade. = = = = Coating: Epoxy Core: High grade ceramic. Terminals: Solder-coated copper lead.

Si4800BDY

Abstract: Si4800BDY-T1 Si4800BDY-T1-E3
Contextual Info: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • High-Efficient PWM Optimized • 100 % UIS and Rg Tested

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

74367

Abstract: SiA811DJ
Contextual Info: SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • TrenchFET Power MOSFETs • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT S

ohmite dial

Abstract: Rheostat 20K fr 608 5106a ohmite rheostat model a OHMITE catalog 203
Contextual Info: A - o Model E u nenclosed 0.625" 15.88 mm 0.531" 13.49 m m 0.125" 3.18 mm shaft locking -n u t L Rheostats t P otentiom eters W irew ound 0.25" 6.35 mm 0.531" 13.49 mm standard shaft 0.25" 6.35 mm M ounting: Panels to 0.125" (3.18m m) thick enclosed with 0.25-32 bushing and

74367

Abstract: SiA811DJ
Contextual Info: SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4810BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY TrenchFET Power MOSFETS Fast Switching Speed