S651 Search Results

S6510MG

Abstract: s6510
Contextual Info: SRLD-650-10 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S6510MG TECHNICAL DATA Visible Wavelength Laserdiode Structure:InGaAlP, index guided single transverse mode

Contextual Info: STR-S6513 OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-S6513 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device

Contextual Info: G M 71V 65163A G M 71V S65163A L 4,196,304 WORDS x 16 BIT LG S e m ïc o n Co., Ltd. w w .,f c .i w . CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced

P241T

Abstract: MS65
Contextual Info: MOSEL / S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100ns Max. version The M OSEL M S6516 is a high performance, low power CM O S static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active

Contextual Info: S6510 F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

Contextual Info: S6510 F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

Contextual Info: S6510 F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

PUSH PULL MOSFET DRIVER dip

Abstract: lamp soft start circuit diagram 50Khz push pull switching S6510P soft start
Contextual Info: S6510P F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

irf740 mosfet

Abstract: IRF740 STR-S6513 GK-009-1 STR-S6
Contextual Info: Data Sheet 28102.10 STR-S6513 OFF-LINE SWITCHING REGULATOR – WITH POWER MOSFET OUTPUT The STR-S6513 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device

12v ballast ic

Abstract: s6510 soft start soft starter ics
Contextual Info: S6510 F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

Contextual Info: AMI S6518/S6518A supply. In ad d itio n , the S6518 fam ily offers guaran­ teed d a ta reten tio n with the pow er supply as low as 2 volts. This m akes th e device an ideal choice when b attery augm ented non-volatile RAM storage is m andatory. The S6518 is fabricated using a silicon gate CMOS

Contextual Info: •> GOULD AM I Semiconductors Preliminary Data Sheet S6514 4096 BIT 1024x4 STATIC CMOS RAM Sep te m be r 1984 Features General Description □ □ □ □ □ □ □ □ The S 6 5 1 4 is a 4096 bit static C M O S R A M organized a s 1024 w o rd s by 4 bits per word. The device offers low

Contextual Info: •> GOULD AMI Semiconductors S6516 Preliminary Data Sheet 16,384 BIT 2048x8 STATIC CMOS RAM February 1985 Features □ Fast Access Time □ Low Power Standby □ Low Power Operation □ On-Chip Address Registers □ Low Voltage Data Retention -2 V □ Fully TTL Compatible Inputs

Contextual Info: S6510P F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

lamp soft start circuit diagram

Abstract: PUSH PULL MOSFET DRIVER dip 12v ballast ic soft start S6510P inverter MOSFET 9V
Contextual Info: S6510P F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

Contextual Info: OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-S6513 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device incorporates the primary control and drive circuit with a discrete ava­

ms6516l

Abstract: MS6516L-10 MS6516L10PC 5PFE JR-101
Contextual Info: MOSEL- VITEUC M S6516 2K x 8 CMOS STATIC RAM Features Description • Available in 100ns Max. version ■ Automatic power-down when chip disabled ■ Low power consumption (L-version): S6516L - 385mW (Max.) Operating - 1 1 mW (Max.) Standby - 55jiW (Max.) Power-down

Contextual Info: S6510P F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

S6518

Abstract: S6518-1
Contextual Info: AM I S6518/S 6518A su p p ly . In a d d itio n , th e S 6 5 1 8 fam ily o ffe rs g u a ra n ­ teed d a ta re te n tio n w ith th e p o w e r sup p ly as low as 2 v olts. T his m ak es th e device an ideal ch o ic e w hen b a tte ry au g m e n ted n o n -v o latile HAM sto ra g e is

S6510

Abstract: marking CODE 001 Soft Start
Contextual Info: S6510 F Semiconductor SIMPLE BALLAST CONTROLLER Description The device provides simple and performance electronics ballast control function for the half bridge L/C resonant inverter. This device is optimized for electronics ballast requiring a minimum board area, reduced component count and low power dissipation.

S-6516

Contextual Info: MOSEL M S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100 and 120 ns Max. versions The MOSEL S6516 is a high performance, low power CMOS static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active

Contextual Info: O FF-LIN E SW ITCH ING REGULATOR - W ITH POWER M O SFET O UTPUT The STR-S6513 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device

irf740 mosfet

Abstract: IRF740 STR-S6513 GK-004-3
Contextual Info: STR-S6513 August 18, 1994 OFF-LINE SWITCHING REGULATOR – WITH POWER MOSFET OUTPUT The STR-S6513 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device

SRLD-650-15

Abstract: S6515MG SRLD-650
Contextual Info: SRLD-650-15 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S6515MG TECHNICAL DATA High Power Visible Wavelength Laserdiode Structure:InGaAlP, index guided single transverse mode