S65 DIODE Search Results
S65 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
S65 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
diode t25 4 A0Contextual Info: SIEMENS SFH4446 TRANSCEIVER OPTICAL MODULE FEATURES Maximum Ratings * Bidirectional Module with Integrated WDM * Emission Wavelenght: 1300 nm * Suitable for Bit Rates up to S65 Mbit/s Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical with the case temperature. |
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sfh4446diode t25 4 a0 | |
dr 25 diode
Abstract: k1 diode Diode DR 25 1800KW S65 Diode
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dr 25 diodek1 diodediode dr 251800kw+1 | |
k1 diode
Abstract: 600kW diode k1 3dd200
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k1 diode600kwdiode k13dd200 | |
3dd200Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 200 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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3dd200 | |
1200KWContextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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1200kw | |
S65 Diode
Abstract: diode k1 k1 diode Diode DR 25 dr 25 diode
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s65 diodediode k1k1 diodediode dr 25+1 | |
3dd200Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 200 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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3dd200 | |
k1 diodeContextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 600 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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k1 diode | |
k1 diodeContextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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k1 diode | |
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Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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diode k1Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 600 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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diode k1 | |
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Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 600 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current |
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DG11 Transistor
Abstract: LC75816 A10719 Diode T3 D46 LC75816E transistor DA3 S19 D45 TRANSISTOR s65 lcd LC75816W QFP100E
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enn7142lc75816e5816wlc75816w+8 | |
transistor D113
Abstract: kd32
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ena1417blc75812pta1417-54/54transistor d113+1 | |
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ad513
Abstract: transistor D113 AC512 kd35 ac03 d41 TRANSISTOR D114 ccb format AD511 AD410 AC710
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ena1417blc75812pta1417-54/54ad513+9 | |
transistor s72
Abstract: PT6530-LQ PT653 ptc6530-lq transistor s68 DIODE S45 transistor s49 PT6530 transistor D209 D-222
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pt6530ms-026transistor s72pt6530-lq+7 | |
F65L
Abstract: DIODE F65L DIODE T25 4 DIODE T25 sanyo v38 diode t56 DIODE T25 4 do ENA0646 f60l G60L
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ena0646la73033ma0646-24/24f65l+8 | |
DIODE F65L
Abstract: 73b51 CT65 F60E ADP27 diode t56 sanyo v38
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ena0646la73033ma0646-24/24diode f65l+6 | |
7 SEGMENT DISPLAY COMMON CATHODE pin configuration
Abstract: 4.0 INCH 7 SEGMENT ST26S1 7 segment display 3.5 inch 7 segment common cathode decimal point 10 pin 7 segment display pin configuration common anode 7segment display FND350 7 segment common anode pin configuration 12 pin 7 segment display pin configuration
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fnd310cfnd317cfnd318cfnd350+13 | |
transistor s68
Abstract: s66 transistor transistor S67 KS621K40 transistor b 103 1f s65 powerex ks62 KS621K4
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ks621k40amperes/1000transistor s68s66 transistor+5 | |
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Contextual Info: G L SCS-THOMSON [*G3 &I(gir[iM0 § M54HC4078 M74HC4078 8 INPUT NOR/OR GATE • HIGH SPEED tpo = 14 ns (TYP. at Vcc = 5V ■ LOW POWER DISSIPATION lCc = 1 ¡A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28% V cc (MIN.) ■ OUTPUT DRIVE CAPABILITY |
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m54hc4078m74hc40784078b | |
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Contextual Info: OPTEK P roduct B ulletin OPB8OOL May 1993 Wide Gap Slotted Optical Switches Types OPB8QOL, 0PB81QL Series Features • • • • 0.375" wide gap Choice of aperture size Choice of minimum photocurrent Choice of opaque or IF transmissive shells • 0.570' lead spacing |
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opb800lopb810lopb8oolvopb810l | |
S80-MH-5-YL09-NNIZ
Abstract: Optical proximity sensor through beam light sensed by uv sensors SA9F-DA13 EN60825-1 EN60947-5-2 IEC825-1 laser sensor performance color detection sensor "infrared proximity sensor" 1997
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rs485800-262-idec888-317-idecs80-mh-5-yl09-nniz+9 | |
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Contextual Info: SIEMENS SFH 4415/11 LASERDIODE FC RECEPTACLE P relim in ary Data Sheet • E m is s io n W a v e le n g th : 1300 nm Output power ratings refer to the optimally coupled output power into a 10/125 im S M fiber. The operating tem perature of the laser heatsink is |
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100mwt-25tj | |