S5CC Search Results

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

15544

Contextual Info: S5AC–S5MC Vishay Lite–On Power Semiconductor 5.0A Surface Mount Glass Passivated Rectifier Features D Glass passivated die construction D Low forward voltage drop and high current capability D Surge overload rating to 100A peak D Ideally suited for automatic assembly

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

MUR6304HX

Abstract: MUR6306HX
Contextual Info: MOT OROL A SC DIODES/OPTO 3 e! E b3b?2S5 D 0002220 I MOT? S r ’- 0 3-^0 M OTOROLA SEMICONDUCTOR TECHNICAL DATA MUR6304HX, HXV MUR6305MX, HXV MUR6306HX, HXV mm m in i Discrete Military Operation Processed per Ml L-S-19500/550 Power Rectifiers Ultrafast Recovery

TCST2001

Abstract: telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001
Contextual Info: TELEFUNKEN EL EC TR O N I C W fi^SüO^b Q007&3R b m k L G G J> TCST 1000 up to TCST 4001 tniQJltRLDKlCSiCÌI electronic _• ~7^ y / - 7 3 Creative Technologies Optoelectronic Interrupter without Aperture Construction: Emitter: GaAs-IR Emitting Diode

Contextual Info: J - Z Z - o H SANSHA ELECTRIC MF6 CO SbE D M 7sJeH E 4 3 □□□DhQ4 TS4 H S E M J DIODE MODULE_ P P g S O H B •Maximum Ratings Syabol Unit Repetitive Peak Reverse Voltage V RRM V 1200 1600 Non-Repetitlve Peak Reverse Voltage V RSH V 1350 1700 Itea O P

827ac

Contextual Info: V T C INC V T C S&fc. I NC, 990 □ D D im a 01148 ; D T - s i -on V54AC827 V74AC827 10-BIT BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS FEATURES •High Speed, 4.5ns Typical •Iq L/Io H " 24mA Commercial, 24mA Military •Low Input Current, 1 U.AMax •Fully Specified: 5V ± 10% Power Supplu, Min arid Max over

hy 1418

Abstract: 79R79
Contextual Info: T - 'RELiMiriÄR^ AM D3 Am79R79 Ringing Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Ideal for short-loop applications ■ Program m able constant-current feed ■ Ideal for ISDN terminal adaptor and fixed radio access applications ■

Contextual Info: ^ 2 4 ^ 6 2 3 D D 2 3 f l7 t . MG2 MITSUBISHI LSIs • I1 IT 1 M5M4V4170J,TP,RT-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family o f 262144-w ord by 1 6 -bit dynamic RAMs,

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

TNY 176 PN EQUIVALENT

Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Contextual Info: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.

IT7230EFN

Abstract: IT7230BFN IT7230 IT7230B C3H 16-pin QFN IT7230CM d 9329 000MA IT7231FN IT7230AFN
Contextual Info: TI AL EN IT7230AFN / IT7230BFN / IT7230BM / IT7230CM / IT7230DFN / IT7230EFN/IT7231FN FI D Single Electrode Cap Sensor Controller Preliminary Specification V0.6 C O N For B Version ITE TECH. INC. This specification is subject to Change without notice. It is provided “AS IS” and for reference only. For

65SC32

Abstract: G65Sc32P G65SC32 128X8 Programmable interval timer chip gte 262
Contextual Info: I r h i J G 6 5 S C 3 2 Microcircuits_ CMOS RAM, I/O, Timer Features General Description • C M O S p rocess te c h n o lo g y fo r lo w p o w e r c o n s u m p tio n Th e G 65SC 32 is a p ro g ra m m a b le R AM , I/O , T im e r d evice fo r use w ith th e G 65SC XXX se rie s 8 -b it m ic ro p ro c e s s o r fam ily.

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

Contextual Info: S5AC-S5MC Vishay Lite-On Power Semiconductor 5.0A Surface Mount Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • L o w fo rw a rd v o lta g e d ro p and high c u rre n t c a p a b ility • S u rg e o v e rlo a d ra tin g to 10 0 A p e a k

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected