S4VB 10 Search Results

s4vb

Abstract: Diode s4vb s4vb 10 S4VB20 s4vb 10 40 s4vb bridge diode S4VB60 S4VB 60 S4VB data sheet s4vb shindengen
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S4VB□ Unit : mm Weight : 5.2g（typ.） Package：S4VB 600V 4A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ④ Feature + S4VB • High-Reliability • Heat Resistance

s4vb 10 20

Abstract: s4vb 10 04 7935 S4VB60 s4vb shindengen Diode s4vb s4vb
Contextual Info: SHINDENGEN General Purpose Rectifiers S4VB60 Square In-line Package OUTLINE DIMENSIONS Case : S4VB Unit : mm 600V 4A RATINGS œ@Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current

S4VB60

Abstract: 7935 S4VB s4vb 10 20 s4vb shindengen s4vb 10 04 Diode s4vb s4vb 10
Contextual Info: SHINDENGEN General Purpose Rectifiers Square In-line Package OUTLINE DIMENSIONS S4VB60 Case : S4VB Unit : mm 600V 4A RATINGS œ@Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current

s4vb 10

Abstract: s4vb Diode s4vb s4vb 10 20 S4VB data sheet s4vb shindengen 10F-A10 600V4 S4VB60
Contextual Info: SHINDENGEN Square In-line Package Bridge Diode OUTLINE DIMENSIONS S4VB60 Case : S4VB Unit : mm 600V 4A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature Maximum Reverse Voltage VRM IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=10℃/W

S4VB20

Abstract: s4vb 10 Diode s4vb s4vb
Contextual Info: SHINDENGEN General Purpose Rectifiers Square In-line Package OUTLINE DIMENSIONS S4VB20 Case : S4VB Unit : mm 200V 4A RATINGS œ@Absolute Maximum Ratings Item Symbol Conditions Storage Temperature Tstg Tj Operating Junction Temperature VRM Maximum Reverse Voltage

S4VB20

Abstract: s4vb 10 20 s4vb 10 s4vb 20 s4vb
Contextual Info: SHINDENGEN General Purpose Rectifiers S4VB20 Square In-line Package OUTLINE DIMENSIONS Case : S4VB Unit : mm 200V 4A RATINGS œ@Absolute Maximum Ratings Item Symbol Conditions Storage Temperature Tstg Tj Operating Junction Temperature VRM Maximum Reverse Voltage

s4vb

Abstract: S4VB20 s4vb 10 Diode s4vb s4vb 10 20 S4VB data sheet s4vb shindengen s4vb 10 40
Contextual Info: SHINDENGEN Square In-line Package Bridge Diode OUTLINE DIMENSIONS S4VB20 Case : S4VB Unit : mm 200V 4A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature Maximum Reverse Voltage VRM IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=10℃/W

s4vb

Abstract: s4vb 10 S4VB20 s4vb60
Contextual Info: SQ I PS! 7 'J Bridge Diode Square In-line Package • W IN -ä s ia OUTLINE DIM ENSIO NS S4VB 600V 4A •s s ttic ffln s fflis tt •WUtaHMMftW •S Q I P RATINGS • ¡fê ^ Î Î i^ / Ë fê m Absolute Maximum Ratings a Item f iw m a t Storage Temperature

Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S4VB60 Unit : mm Weight : 5.2g （typ.） Package：S4VB 600V 4A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ④ 25 7.5 Feature + S4VB • High-Reliability

s4vb

Abstract: Diode s4vb S4VB60 s4vb 10 DIODE marking 33 marking 33 diode S4VB data sheet diode marking 17 diode bridge 2A
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S4VB60 Unit : mm Weight : 5.2g （typ.） Package：S4VB 600V 4A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ④ 25 7.5 Feature + S4VB • High-Reliability

AIR21

Abstract: s4vb 10 20 s4vb s4vb 10 s4vb 10 04 s4vb 10 40 Diode s4vb s4vb 10 35
Contextual Info: SQ I P型 ブリッジダイオード Square In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package：S4VB Unit : mm Weight：5.2g（typ.） S4VB□ 600V 4A 品名 Type No. ロット記号（例） Date code ●耐湿性に優れ高信頼性

s4vb bridge rectifier

Abstract: D15VBA60 S4VB rectifier 4 terminal bridge rectifier S4VB S5VB S5VB rectifier s4vb 10 38 D5FB20 s4vb 10 15 s4vb
Contextual Info: RECTIFIER DIODES Low-frequency rectifying SQIP Bridge Diodes S15WB S10WB S3WB S20WB Input/Output in-line terminal Absolute Maximum Ratings VRM IO Type No. [V] S3WB20 60 S10WB20 60 S15WB20 60 S20WB20 60 200 600 200 600 200 600 200 600 Electrical Characteristics

Contextual Info: SQ.I.P.St Square In-line Package Bridge Diode • \1->£H O U T L IN E D IM E N S IO N S S4VBD 600V 4A ■ tefem R A T IN G S Absolute Maximum Ratings I I A g Item S ym b o l V M axim um R e v e rs e V o lta g e -tfA J I-V -H i- B it P e a k S u rg e F o rw a rd C u rre n t

S5VB20

Abstract: s4vb s4vb 10 40 S2VB10 s4vb 10 S2VB* bridge Bridge diodes
Contextual Info: R ectifier Diodes Low frequency rectifying SQIP Bridge Diodes S20W B Input / O utput in-line term inal A b solute M axim um R atings Electrical C haracteristics 8 I m ax) fija (m ax) 6\c (m ax) [/¿A] ["C /W ] [°C /W ] [°C /W ] 10 5.5 26.5 5 10 4 24 1.05

S60VB60

Abstract: S5VB s4vb SI0V S8VB20 s4vb 10 38 D7720 S50VB
Contextual Info: mÊMSMBÊMm S3W B Input/Output in-line terminal Absolute Maximum Ratings Type No. Electrical Characteristics Tstg Tj Ir Vz max Condire (max) (min) (max) If V r = V rm [•c] [A ] C-o] [•o] [V ] [A] L“ A] [V ] [•c/w] 40* 120 - 4 0 - 150 1DU 1 •UD

SIVB20

Abstract: sivb*60 sivb60 sivb sivb40 s4vb bridge rectifier SIWB sivb10 SIVB60Z SIWB 60
Contextual Info: 0923515 A R I STO-CRAFT s> S °- S ilic o n $a fe m Vbm V DIR20 fa DIR60 DIR80 * £ D IR 100 IS 1000 D IR I5 0 £ 1500 DIR20Z D IR40Z It DIV20 ft 800 400 100 S2V20 ft 200 S2V40 n S2V60 * $ 600 S 3 V I0 S3V20 ft 200 * » S3V60Z 1 400 « 1.7 S IY B 2 0 3.5

s4vb bridge rectifier

Abstract: B20 bridge rectifier S4VB rectifier S5VB rectifier s4vb S4VB20 S2VB* bridge S5VB20 33 S5VB
Contextual Info: Rectifier Diodes Low frequency rectifying SQIP Bridge Diodes -1_ S3W B S10W B S20W B In p u t/O u tp u t in-line term inal A b so lu te M axim um Ratings E lectrical C hara cte ristics 8\I m ax d\a (m ax) 6\c (m ax) [* A ] [°C /W ] t°c/w ]

d1ca

Abstract: S10VB STO-220 s4vb 67 s15vb s4vb AX057 AX06 AX078 S2VB
Contextual Info: OUTLINE DIMENSIONS Fig. 1 Package: AX057 Fig. 2 Package: AX06 Fig. 3 Package: AX06 Fig. 4 Package: AX06 Fig. 5 Package: AX078 Fig. 6 Package: AX10 Fig. 7 Package: AX10 Fig. 8 Package: AX14 Fig. 9 Package: AX14 1 • 8 0 0 • 6 3 4 • 3 6 5 4 OUTLINE DIMENSIONS

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

SMD T26

Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
Contextual Info: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r

2SB 545

Abstract: 030VC60 smd tra 14 SMD T26 1AMM ST0220 Am 170 415
Contextual Info: Basic Ordering and Packing Form Explanation o f P acking L is ts 1. Type No. Example 1 D1ND ^- R everse voltage X 1/10. Example 2 2SK 2663 E IA J No. E IA J C lassification. 2SA , 2SB , 2S C , 2SD T ra n s is to r 2 S J : M osfet Reel width 2. Code No.

Contextual Info: Outline Dimensions [U n it : m m ] Package : AX057 ie e t f * i 3 0.1 * Si Axial Taping or Radial Taping i n _ jSsj 27.5*i , (2) ' •I 275„ Fig. 2-1 °— m— °© Fig. 2-2 °® Package : AX06 Package : AX06 Package : AX06 n Package : AX078 •nil

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

Contextual Info: Page:50 発注数量と梱包形態一覧表 パッケージ Fi g. 仕様 コード 5060 AX057 1 5070 4000 4060 ツェナー SI DAC 4061 4070 2, 3 AX06 5000 5060 バリスタ 5061 5070 4000 ツェナー 4060 SI DAC 4070 5 AX078 5000 ダイオード 5060 5070