S4M Search Results

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

Contextual Info: 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726 L S4M-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix

744G

Abstract: pls-1.27 mm
Contextual Info: 02S [ G4mm] SOUflRE POST HERDERS PZC SERIES .100 M O O [2.S4mm X 2.54mm] GRID PART NUMBER P z CODING AA 36 -M# T. SERIES MODIFICATIONS Consult Factory P = .025" [.64 mm] Sq. Post Header Omit for Standard CONTACT F IN I S H -Head Tail Underplate Z = . OOOOIO" Gold

SOT-89 FJ

Contextual Info: N J U 7 2 2 2 » > M -X 3 *2 3 I E ft * J Œ tK ^ U m^F- ^ 'S» $ M- if NJU7222->IJ-*’ li. Ü J * Œ f l l * ± 2 X Î 3 l ^ L f c « * * * a w r 7 C-KOS3«i¡ E « Œ * * Hr-/ I/*' i H IC T . » « I t S4MKŒS. £ * « « $ , mmî'S/X*. Üi*ŒRÆffltS

hsj1

Abstract: TIC 33
Contextual Info: ILLUMINATED TACTILE SWITCH • je * } * * : $ f é /A b s o lu t e Maximum Rating X-f'^-iW/Switch portion 12V POmA L E D 8 B § L E D C ^ S /L E D p o r tio n ( P e r LED chip)(Ta 25°C) S4M Rating m s Item Symbol IW K (mW) Power dissipation k imA1 ' m m m

DDR200

Abstract: DDR266A DDR266B
Contextual Info: 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726 L S4M-K/H/L DESCRIPTION Hynix HYMD212G726(L)S4M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix

Contextual Info: HYMD525G726B P S4M-K/H SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4 Number of Column addresses on this assembly

c3l03

Abstract: 3L03 75nC Marking code AHm R5401 MARKING 1ft marking AHM S4k marking marking code 1ft
Contextual Info: E RoHS S4A - S4M TA IW A N S E M IC O N D U C T O R 4.0 AMPS. Surface Mount Rectifiers SMC/DO-214AB C O M P L IA N C E Features ->• ❖ ❖ -$■ ❖ ❖ -$■ ❖ -$■ ->■ 2K<7.11I_ For surface mounted application Glass passivated Junction chip.

Contextual Info: 256Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD525G726 L S4M-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix

Contextual Info: 256Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD525G726A L S4M-M/K/H/L Revision History Revision No. History Draft Date Remark 0.1 Defined Target Spec. Jan. 2003 Preliminary 0.2 Defined Cap. Value Dec. 2003 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

A090

Abstract: 1B67
Contextual Info: 2047 Series □upiin Elevated P.C.B. Socket 2.54mmX2.S4mm 0.100"X0.100" Material: Housing: 30% Glass filled PBT UL94V-0. Contacts: Phosphor Bronze. Electrical Characteristics: Current Rating: 1 AMP. Insulator Resistance: 5000MQ min. at DC 500V. Contact Resistance: 20mQ max. at DC 100mA.

S4M02600F

Abstract: S4M02-600F s4m02 photoresistor LDR07 TO 126 FEATURES
Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors S4M02-600F SCRs 4 AMPERES RMS 600 VOLTS TO-126 FEATURES Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics

S2M diode

Abstract: diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616 1N5614 1N5616 1N5618
Contextual Info: SEHTECH CORP SfiE D 1N5614 1N5616 1N5618 S2M S4M S6M 1N5622 SOM • 013^13^ OODBbSO ATS * S E T STANDARD RECOVERY QUICK REFERENCE AXIALLEADED HERMETICALLY SEALED DATA STANDARD RECOVERY RECTIFIER DIODE • Vr • If • trr • Vf = 200 - 1000V = 2.0A = 2 i.S

Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD525G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix YMD525G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glassepoxy substrate. Hynix HYMD525G726A(L)S4-M/K/H/L series provide a high performance 8-byte interface in 5.25"

Contextual Info: S4A THRU S4M 4.0 AMPS. Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Current 4.0 Amperes SMC/DO-214AB Features .129 3.27 .118(3.0) For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place

Contextual Info: S4A THRU S4M 4.0 AMPS. Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Current 4.0 Amperes SMC/DO-214AB Features .129 3.27 .118(3.0) For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place

Contextual Info: 2047 Series □upun E levated P.C .B . S o c k e t 2.54m m X2.S4m m 0.100"X0.100" Material: Housing: 30% Glass filled PBT Contacts: Phosphor Bronze. UL94V-0. Electrical Characteristics: Current Rating: 1 AMP. Insulator Resistance: 5000MQ min. at DC 500V.

6N60

Abstract: sot-89 A y 8 NJU7222U50 NJU7222 NJU7222L NJU7222L30 NJU7222L50 NJU7222U NJU7222U30 NJU7222V
Contextual Info: N J U 7 2 2 2 » > M -X 3*2 3 I E ft * m^F- J Œ tK ^ U ^ 'S» $ M- if NJU7222->IJ-*’ li. Ü J * Œ f l l * ± 2 X Î 3 l ^ L f c « * * * a w r 7 C-KOS3«i¡ E « Œ * * Hr-/ I/*' i H IC T . » « I t S4MKŒS. £ * « « $ , mmî'S/X*. Üi*ŒRÆffltS

marking s4x

Contextual Info: IM S4A - S4M TAIWAN SEMICONDUCTOR 4.0 AMPS. Surface Mount Rectifiers SMC/DO-214AB RoHS COMPLIANCE 1 .120 3.20 .114(2.90) .245(6.22) u. .2 20(5.59) Features A -$• -v- UL Recognized File # E-326243 For surface mounted application Glass passivated junction chip.

Contextual Info: HYMD212G726D P S4M-K/H SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4 Number of Column addresses on this assembly

S4k marking

Contextual Info: S4A - S4M CREAT BY ART 4.0 AMPS. Surface Mount Rectifiers SMC/DO-214AB Pb RoHS COMPLIANCE Features — For surface mounted application — Glass passivated junction chip. — Low forward voltage drop — High current capability — Easy pick and place — High surge current capability

Contextual Info: 256Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD525G726A L S4M-M/K/H/L DESCRIPTION Hynix HYMD525G726A(L)S4M-M/K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256M x 72 high-speed memory arrays.

Contextual Info: 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726B L S4M-M/K/H/L Revision History Revision No. History Draft Date 0.1 Defined Target Spec. Dec. 2003 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726C L S4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726C(L)S4M-M/K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix